P-CHANNEL MOSFET 40V Search Results

IRF95

Abstract: IRF9510 p channel mosfet 100v TA17541
Contextual Info: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

CXDM4060P

Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
Contextual Info: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET

CMLM8205

Abstract: PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A
Contextual Info: Product Brief CMLM8205 Multi Discrete Module 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module consisting of a single P-Channel Enhancement Mode MOSFET

3N163

Abstract: TO72 package
Contextual Info: 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

Contextual Info: LS3N163 P-CHANNEL MOSFET The LS3N163 is an enhancement mode P-Channel Mosfet The LS3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

UTT20P04

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT20P04 Power MOSFET -40V, -20A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT20P04 is a P-channel Power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P04 Power MOSFET -40V, -60A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT40P04 Power MOSFET 40V, 50A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT40P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT65P04 Power MOSFET 65A, 40V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT65P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high

Contextual Info: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

FDD4141

Contextual Info: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

SI4563DY

Contextual Info: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested

FDD4141

Abstract: Fairchild FDD4141
Contextual Info: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

Contextual Info: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

FDS4141

Contextual Info: FDS4141 P-Channel PowerTrench MOSFET -40V, -10.8A, 13.0mΩ Features General Description „ Max rDS on = 13.0mΩ at VGS = -10V, ID = -10.5A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

F011

Abstract: F63TNR F852 FDS4675 L86Z
Contextual Info: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

Contextual Info: FDS4141 P-Channel PowerTrench MOSFET -40V, -10.8A, 13.0mΩ Features General Description ̈ Max rDS on = 13.0mΩ at VGS = -10V, ID = -10.5A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

Contextual Info: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

Contextual Info: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

list of P channel power mosfet

Abstract: si4563 SI4563DY
Contextual Info: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested

FDS4675

Contextual Info: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

FDD4685

Abstract: 100A inverter mosfet
Contextual Info: FDD4685 40V P-Channel PowerTrench MOSFET –40V, –32A, 27mΩ Features tm General Description „ Max rDS on = 27mΩ at VGS = –10V, ID = –8.4A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

Contextual Info: FQD5P20 / FQU5P20 P-Channel QFET MOSFET -200 V, -3.7 A, 1.4 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

FQT5P10

Contextual Info: FQT5P10 P-Channel QFET MOSFET -100 V, -1.0 A, 1.05 Ω Features Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to