P-CHANNEL HEXFET POWER MOSFET Search Results

irf7381pbf

Contextual Info: PD - 95940 IRF7381PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Freel Description l l HEXFET® These P-Channel power MOSFETs from International Rectifier utilize advanced processing

IRF P-Channel FET 100v

Abstract: 68A diode IR 200V P-Channel fets k 68a irf P-Channel MOSFET audio IRFG5210 4.5v to 100v input regulator
Contextual Info: Preliminary Data Sheet No. PD - 9.1664 HEXFET TRANSISTORS IRFG5210 COMBINATION N AND P CHANNEL 2 EACH Ω (N and P channel ) HEXFET 200 Volt, 1.60Ω Product Summary The HEXFET technology is the key to International Rectifier’s Part Number advanced line of power MOSFET transistors. The efficient

mosfet power totem pole CIRCUIT

Abstract: parallel connection of MOSFETs HEXFET Power MOSFET P-Channel hexfet audio amplifier IR power mosfet switching power supply 20V P-Channel Power MOSFET AN-950 AN-940 mosfet hexfet pair HEXFET Characteristics
Contextual Info: AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load

mosfet power totem pole CIRCUIT

Abstract: IR power mosfet switching power supply AN-940 mosfet AN-950 HEXFET Power MOSFET P-Channel AN937 AN-948 P-channel HEXFET Power MOSFET parallel connection of MOSFETs hexfet audio amplifier
Contextual Info: Index AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load

5S45S

Contextual Info: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­

Contextual Info: PD - 95503B IRF5804PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

IRF7425

Abstract: MS-012AA
Contextual Info: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description D These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: j p j -0 p p Q I j Q p Q I Provisional Data Sheet No. PD-9.432B I O R Rectifier JANTX2N6800 HEXFET POWER MOSFET JANTXV2N6800 [REF:MIL-PRF-19500/557] [GENERIC:IRFF330] N-CHANNEL 400 Volt, 1.0Q HEXFET Product Summan1 Part Number BV dss HEXFET technology is the key to International

smd 2f

Abstract: IRFN9140
Contextual Info: Provisional Data Sheet No. PD-9.1553A HEXFET POWER MOSFET IRFN9140 P-CHANNEL Ω HEXFET -100 Volt, 0.20Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state

smd 2f

Abstract: IRFN9240 Diode smd 2f ir mosfet smd package smd diode 44 smd diode 2F 7A
Contextual Info: Provisional Data Sheet No. PD-9.1554A HEXFET POWER MOSFET IRFN9240 P-CHANNEL Ω HEXFET -200 Volt, 0.51Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state

IRF5820

Abstract: IRF5800 IRF5810 SI3443DV IRF5851
Contextual Info: PD -94198A IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A Description These P-channel HEXFET® Power MOSFETs from

IRF5820

Abstract: IRF5800 IRF5804 SI3443DV IRF5851 IRF5806 irf5852 sot-23 MARKING CODE 3d
Contextual Info: PD - 94333A IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

Contextual Info: Data Sheet No. PD-9.437B I« R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL [8 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs The HEXFET® technology is the key to International

IRF5800

Abstract: IRF5803 SI3443DV sot-23 Marking 3D Switching Diode SOT23 Marking 3D Switching Diode SOT23 Marking 3J MARKING CODE 88 TSOP-6
Contextual Info: PD-94015 IRF5803 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from

IRf 334

Contextual Info: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

548B

Abstract: IRF9230 JANTX2N6806 JANTXV2N6806
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.548B HEXFET JANTX2N6806 POWER MOSFET JANTXV2N6806 [REF:MIL-PRF-19500/562] [GENERIC:IRF9230] P-CHANNEL Ω HEXFET -200 Volt, 0.80Ω Product Summary HEXFET technology is the key to International

IRFF9120

Abstract: JANTX2N6845 JANTXV2N6845
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.552B HEXFET JANTX2N6845 POWER MOSFET JANTXV2N6845 [REF:MIL-PRF-19500/563] [GENERIC:IRFF9120] P-CHANNEL Ω HEXFET -100 Volt, 0.60Ω Product Summary HEXFET technology is the key to International

550B

Abstract: IRFF9130 JANTX2N6849 JANTXV2N6849 9550B
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.550B HEXFET JANTX2N6849 POWER MOSFET JANTXV2N6849 [REF:MIL-PRF-19500/564] [GENERIC:IRFF9130] P-CHANNEL Ω HEXFET -100 Volt, 0.30Ω Product Summary HEXFET technology is the key to International

553B

Abstract: IRFF9220 JANTX2N6847 JANTXV2N6847
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.553B HEXFET JANTX2N6847 POWER MOSFET JANTXV2N6847 [REF:MIL-PRF-19500/563] [GENERIC:IRFF9220] P-CHANNEL Ω HEXFET -200 Volt, 1.5Ω Product Summary HEXFET technology is the key to International

JANTX2N6851

Abstract: 551B IRFF9230 JANTXV2N6851
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.551B JANTX2N6851 HEXFET POWER MOSFET JANTXV2N6851 [REF:MIL-PRF-19500/564] [GENERIC:IRFF9230] P-CHANNEL Ω HEXFET -200 Volt, 0.80Ω Product Summary HEXFET technology is the key to International

Contextual Info: FOR REVIEW ONLY IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -20V 90@VGS = -4.5V 135@VGS = -2.5V -2.9A -2.3A Description These P-channel HEXFET® Power MOSFETs from

EIA-541

Abstract: F7101 IRF7101 IRF7420 Ultra Low rds
Contextual Info: PD - 94278A IRF7420 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS RDS on max ID -12V 14mΩ@VGS = -4.5V 17.5mΩ@VGS = -2.5V 26mΩ@VGS = -1.8V -11.5A -9.8A -8.1A Description These P-Channel HEXFET® Power MOSFETs from