P CHANNEL 600V 50A IGBT Search Results

APT50GL60BN

Abstract: 25CC
Contextual Info: A D V A NC ED PO WER T E C H N O L O G Y blE D • O a S ? ^ 1! OOOOflSM bTT * A V P ■ R A d v a n c W /< A P O W E R e d rJ m I T e c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

Contextual Info: A D V A N C E D PO WE R T E C H N O L O G Y blE D • 0257^0=1 0 0 0 0 0 5 4 bTI H A V P ■ r W /jA A dvanced pow er Te c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

P channel 600v 50a IGBT

Abstract: P channel 600v 30a IGBT P channel 50A IGBT MIG50J904H
Contextual Info: TOSHIBA TENTATIVE MIG50J904H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J904H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Converter and Brake Power Circuits in One Package. Output Inverter Stage

MG50N2YS9

Abstract: P channel 50A IGBT
Contextual Info: GTR MODULE_ SILICON N CHANNEL IGBT MG50N2YS9 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=l.Oys Max. trr=0.5ys(Max.) . Low Saturation Voltage: VcE(sat)=5.0V(Max.) . Enhancement-Mode

Contextual Info: T O SH IB A MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

mg50q2ys50

Contextual Info: T O SH IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)

Contextual Info: T O S H IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : t f= 0 .3 /* s Max. @ Inductive Load • Low Satu ration Voltage : V CE (sat) = 3.6V (Max.)

mg50q2ys50

Contextual Info: T O SH IB A MG50Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E ( s a t ) = 3.6V (Max.)

Contextual Info: T O SH IB A MG50Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

P channel 50A IGBT

Contextual Info: SILICON N CHANNEL IGBT GT50J301 Unit in mm HIGH PO W ER SW ITCHIN G APPLICATIONS M O T O R CON TROL APPLICATIONS 2 0.5 MAX. 0 3 3 ±0.2 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/us Max. Low Saturation Voltage : VcE(sat) = 2.7V (Max.) FRD Induded Between Em itter and Collector

Contextual Info: TOSHIBA TENTATIVE MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q 6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf= 0 .3 /iS Max. Inductive Load Low Saturation Voltage

Contextual Info: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

DC MOTOR CONTROL IGBT

Abstract: ES50A
Contextual Info: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE MG50Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

MG50N2YS9

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG50N2YS9 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf "1. 0/is Max. trr=0.5us(Max.) . Low Saturation Voltage: (sat:)~5.OV(Max .) . Enhancement-Mode . includes a CompLete Half Bridge in One

MG50J6ES1

Abstract: 35fj FL300
Contextual Info: MG50J6ES1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Electrodes are Isolated from Case . 6 IGBTs are Built Into 1 Package. . Enhancement-Mode . Low Saturation Voltage : VCE sat =4.0V(Max.) . High Speed : tf=0. 35fJs(Max.)

150AVP

Contextual Info: TOSHIBA MIG150J202H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT Mini ^n i?n? h • V ■ ■ 'W ■ V V V ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for

MIG150J202H

Abstract: TLP559
Contextual Info: TOSHIBA MIG150J202H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MIG 1 50J202 H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for

Contextual Info: T O SH IB A MG50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode.

Contextual Info: T O SH IB A MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 1 1 0 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG50H1ZS1 HI GH POWER S W I T C H I N G APPLICATONS. M O T O R C O NT RO L A PP L IC ATIONS. . High Input Impedance . High Speed : tf= 1. Ous Max. t r r = 0 . 5/j s (Max. ) . Low Saturation Voltage : V C E (sat)=5.0V(Max.)

td 4950

Abstract: MG50J6ES50
Contextual Info: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 4-0 5.5 ± 0.3 7-M4 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

P channel 50A IGBT

Contextual Info: TOSHIBA MG50J6ES50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH P O W E R SWITCHING APPLICATIONS. Unit in mm M O TO R CONTROL APPLICATIONS. • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: T O SH IB A MG50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package.

Contextual Info: TOSHIBA MG50J1BS11 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG50J1 BS11 HIGH PO W E R SWITCHING APPLICATIONS. Unit in mm M O TOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/^s M ax. (Ic = 50A) Low Saturation Voltage : VçE(sat) = 2-TV (Max.) (I<2= 50A)