P 838 X MOSFET Search Results

P 838 X MOSFET

Contextual Info: Cdlotf WUIVWlC P-Chaimel Enhancement Mode MOSFET General Purpose Amplifier ^ M §mfm \J CORPORATION IT1700 A B S O L U T E M A X IM U M R A T IN G S T a = 2 5 °C u nle ss o th e rw ise s p ecified FEATURES • • • • • Low H ig h Low H ig h Low

P 838 X MOSFET

Contextual Info: MITSUBISHI Nch POWER MOSFET ! FS30UM-06 I % HIGH-SPEED SWITCHING USE FS30UM-06 • 10V DRIVE • VDSS . 60V • rDS ON (MAX) .30mQ • I D . 30A

AN-994

Abstract: IRFL9110
Contextual Info: PD - 90864A IRFL9110 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A Description S Third Generation HEXFETs from International Rectifier

IRFL9014

Abstract: sot-223 MOSFET AN-994
Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier

AN-994

Abstract: IRLL014
Contextual Info: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description

AN-994

Abstract: IRFL214 90862A
Contextual Info: PD - 90862A IRFL214 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description

2N7236U

Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
Contextual Info: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

IRF P CHANNEL MOSFET 10A 100V

Abstract: 2N7237U P 838 X MOSFET IRFN9240 JANTX2N7237U JANTXV2N7237U smd diode 2F 7A
Contextual Info: PD-91554C IRFN9240 JANTX2N7237U JANTXV2N7237U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -200 Volt, 0.51Ω Product Summary Part Number IRFN9240 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power

IRFP260N

Abstract: IRFP260N applications P 838 X MOSFET
Contextual Info: PD - 94004 PROVISIONAL IRFP260N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.04Ω

Contextual Info: PD- 93898 PROVISIONAL IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

P-Channel 200V MOSFET TSOP6

Contextual Info: PD- 93795 Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D RDS on = 0.065Ω S T o p V ie w Description These P-channel MOSFETs from International Rectifier

Si3443DV

Abstract: P-Channel 200V MOSFET TSOP6
Contextual Info: PD- 93795A Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω T o p V ie w Description These P-channel MOSFETs from International Rectifier

power mosfet so8 FL

Contextual Info: PD- 93899 PROVISIONAL IRF7453 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See App. Note AN1001

IRFB17N50L

Abstract: IRFBL17N50L
Contextual Info: PD- 93929 PROVISIONAL IRFBL17N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics

Contextual Info: PD- TBD FOR REVIEW ONLY PROVISIONAL IRF7450 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

IRFB18N50K

Contextual Info: PD- 93926 PROVISIONAL IRFB18N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and

Contextual Info: PD- 93843 PROVISIONAL IRF7463 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification Benefits Low Gate Impedance to Reduce Switching Losses l Ultra-Low RDS on at 4.5V VGS l Fully Characterized Capacitance Including

AN-994

Abstract: IRLL014
Contextual Info: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description

Contextual Info: PD- 93840 PROVISIONAL IRF7456 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 20V 0.0065Ω 16A Benefits Ultra-Low RDS(on) at 4.5V VGS l SO-8 Absolute Maximum Ratings Parameter

SMPS MOSFET

Abstract: 24V 10A SMPS ic
Contextual Info: PD-93892 PROVISIONAL IRF7458 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 30V 0.008Ω 14A Benefits Low Gate Impedance to Reduce Switching Losses l Ultra-Low RDS(on) at 10V VGS

48V SMPS

Abstract: MJ 68A
Contextual Info: PD- 94037 PROVISIONAL IRF7473 SMPS MOSFET HEXFET Power MOSFET Applications Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterrutible Power Supply Benefits l Ultra Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved

10BQ040

Abstract: IRLR8103 IRLR8503 marking JE FET
Contextual Info: PD - 93838 PD - 93839 IRLR8103/IRLR8503 IRLR8103/IRLR8503 Provisional Data Sheet • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current

Contextual Info: I . I PD - 91813 International K » Rectifier i n r i n .M p n A smpsmosfet IRFIB6N60A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching • High Voltage Isolation = 2.5KVRMS

IRFB17N50L

Contextual Info: PD- 93927 PROVISIONAL IRFB17N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics