P 80 3L Search Results

Contextual Info: HI5735 Semiconductor 12-Bit, 80 MSPS, High Speed Video D/A Converter January 1998 Description Features Throughput R a t e . 80 MSPS Low P o w e r . . ,650m W Integral Linearity E r r o r .

TMS416160

Abstract: TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P L6VE
Contextual Info: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160A- MAY 1995 - REVISED JUNEJ995 '4xx160/P-60 '4xx160/P-70 ’4xx160/P-80 TIME tCAC MAX 15 ns 18 ns 20 ns ACCESS READ OR

Contextual Info: SQM50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • Package with Low Thermal Resistance

72194

Contextual Info: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S

Contextual Info: SQM50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • Package with Low Thermal Resistance

Contextual Info: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 VDS (V) - 80 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see

si2337

Abstract: SI2337DS-T1-E3
Contextual Info: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: SQM50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET

SUM110P08-11L rev

Contextual Info: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see

Contextual Info: Si2337DS www.vishay.com Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.270 at VGS = -10 V -2.2 0.303 at VGS = -6 V -2.1 VDS (V) -80 Qg (TYP.) 7 • TrenchFET power MOSFET • Material categorization: for definitions of compliance please see

SQM50P08-25L

Contextual Info: SQM50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET

Contextual Info: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

pnp 3Fp

Abstract: marking 3gp marking code 3Fp 3bp sot 23 marking sot23 marking u8 marking 3Bp BC856B 3BP marking code u8 marking 3fp SOT23 SOT MARKING 3lp
Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 ~ V CEX max. 80 50 30 V Collector-emitter voltage open base - v CEO max. 65 45 30 V Collector current (peak value) - ' cm max. 200

fj 3191 ah

Contextual Info: HIGH PfRrORMANCE ANALOG INTEG RA~EDCIPCJi'S F eatu res • Complete two-input fader with output amplifier—uses no extra components • 80 MHz bandwidth • Fast fade control speed • Operates on ± 5V to ± 15V supplies • > 60 dB attenuation @ 5 MHz A p p lication s

interfacing of RAM and ROM with 8085

Abstract: AD7511SD DB9 pin configuration AD7571 AD7571AQ AD7571BQ AD7571JN AD7571KN AD7574 D28B
Contextual Info: ANALOG DEVICES □ l'muo M,P-Compatible 10-Bit Plus Sign ADC FEATURES 10-Bit Plus Sign Resolution N o Missed Codes Over Full Tem p eratu re Range Conversion Tim e 80|*s D ifferential Analog V oltage Inputs, ± 1 0 V Range Serial and Parallel Data O utputs

2-21F1A

Contextual Info: Rziz Ta=25"C EIAJ 37 i% : hFE(lja%i R : 55-110, 0 : 80-160 25 2-21F1A -16 "0 -4 -8 3lJ5J$J.X$ -12 hm - Ic -I 6 -20 IC - VBE -0.4 - 0.8 -i - ;( . I. $ 9 VCE(sat) -1.2 - 1.6 - IC 500 300 -1 !z Jz 100 # @ ?s #nJ -0.5 / 50 30 p, t( 10 5 P, Jb 1 3 -,0.05 - 0.03

JANS2N3741

Abstract: ne 545 d
Contextual Info: Microsemi PNP Transistors : P a cka g e O u tlin e M il i Data Spec Sheet : ID PD iC V c b o V c e o V e b o V C E sat @ IC <w> (A) (V) (V) (V) (V) (m A ) HFE m in (dB ) -5 100 80 5.5 1.5 2.5 70 200 23776 11.8 11.8 -5 100 80 5.5 1.5 2.5 30 90 545 23781 11.8

Contextual Info: • APX LLS3S31 0D2MM71 HbU N AMER PHILIPS/DISCRETE BC856 BC857 BC858 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 “ V CEX max. 80 50 30 V - v CEO max. 65 45 30 V Collector current peak value

3CRS12

Contextual Info: ^ É W f T Y P R F S S PmLUmAm CY7C9700 Fast Ethernet Repeater Controller Features • R e p e ate r lo o p b a ck m o d e fo r testin g • 13 Port IE E E 80 2.3u co m p lia n t 1 0 0B A S E -T R epeater C o n tro ller • 13 G en eral p u rp o se p ro g ram m ab le I/O pins

Q342

Abstract: 89CNQ150 T-884 SLD61-6 DT 8210 89CNQ 89CNQ150SM
Contextual Info: International [^Rectifier P D - 2.495 89CNQ150 SCHOTTKY RECTIFIER 80Amp Major Ratings and Characteristics Characteristics If<av Rectangular waveform Desciption/Features B9CNQ150 Units 80 A The 89CNQ150 center tap Schottky rectifier module has been optimized for very low forward voltage drop, with

Contextual Info: Shunt wires SHUNT WIRE JC type D im e n s io n s m m (in.) P art No. L ad B P £ £i $,2 h T Conductor Total Cross Sectional Area (mm2) Current Rating (A) (as a reference) JC 1-L - 14 (.551) 75 (2.953) 40 (1.575) 80(3.150) 20 (.787) 40 (1.575) 20 (.787)

Contextual Info: SEMICONDUCTOR BC856W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E M FEATURES ・For Complementary With NPN Type BC846W/847W/848W. B M D J G A 2 3 1 P SYMBOL RATING -80 BC856W Collector-Base Voltage