P 181 V Search Results

Contextual Info: an A M P com p any Low Noise Amplifier, 8.5 dB Gain 10 - 400 MHz AM-/AMC-/AMS-181 V2.00 TO-8-1 Features • 1.5 dB Typical Midband Noise Figure • +31 dBm Typical Midband Intercept • Ideal for Broadband IF Applications • Fully Hermetic Package AMS-181

AM-181

Abstract: AMC-181 AMS-181
Contextual Info: y a n A M P ct o m p a n y Low Noise Amplifier, 8.5 dB Gain 10-400 MHz AM-/AMC-/AMS-181 V2.00 Features • • • • TO-8-1 1.5 dB Typical Midband Noise Figure +31 dBm Typical Midband Intercept Ideal for Broadband IF Applications Fully Hermetic Package AMS-181

BS223

Contextual Info: BS223 DMOS Transistors P-Channel TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time

BS209

Contextual Info: BS209 DMOS Transistors P-Channel TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time

BS208

Abstract: BS-208
Contextual Info: BS208 DMOS Transistors P-Channel TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) max. ∅ .022 (0.55) ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance

Contextual Info: TV Tuner USA - N.T.S.C. 181 Channel / 3 Band Features The Performance Standard of the Industry 181 Channel, 3 Band, Built-in P.L.L. Circuit Small Size - 32.3 mm x 16.1 mm x 73.7 mm Product P/N: TEKH9-1 Supply Voltage: 9 vdc ± 0.1 vdc Current consumption: 100 ma max.

Contextual Info: S N 5 4 A S 1 181. S N 7 4 A S 1 181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS D 19 15 , M A Y 1985 Package Options Include Compact 300-m il or Standard 600-m il DIPs and Both Plastic and Ceramic Chip Carriers S N 5 4 A S 1 181 . . . J T OR J W P AC KAG E

BS250

Abstract: equivalent of BS250 BS250 datasheet
Contextual Info: BS250 DMOS Transistors P-Channel TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown

DB-1MS

Contextual Info: SIEMENS BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz Q62702-F1271 1=C It RFs m B F P 181 PO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: jtià < m an A M P c Low Noise Amplifier, 8.5 dB Gain 10 - 400 MHz AM-/AMC-/AMS-181 Features • TO-8-1 1.5 dB T ypical M id band N oise Figure • +31 dB m T ypical M idband In terce p t • Id eal fo r B ro a d b a n d IF A pplications • Fully H erm etic P ack ag e AMS-181

Contextual Info: P /N I S 181 BC—2450S Alternative Connectors .TNC Reverse Polarity Plug female P /N : S181 BR—2450S Electrical Properties: Frequency Range: Impedance: VSWR: Gain: Radiation: P olarization: Wave: 2 .4 ~ 2 .5 GHz 50Q nom inal < 2 .0:1 2 dBi Omni Vertical

a5882

Abstract: D191 SN74AS1181 SN74AS882 SN54AS1181
Contextual Info: SN54AS1181, SN74AS1181 ARITHMETIC LOGIC UNITSjFUNCTION GENERATORS D 191 5. M A Y 1985 S N 5 4 A S 1 181 . . . J T OR J W PAC KA G E S N 7 4 A S 1 181 . . D W , NT, OR N W P AC KA G E Package O ptio ns Include C om p act 30 0 -m il or S tandard 6 0 0 -m il DIPs and B oth Plastic

d1915

Abstract: a5882 D191 SN74AS1181
Contextual Info: SN54AS1181, SN74AS1181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS D1915. MAY 1985 Package Options Include Compact 300-m il or Standard 600-m il DIPs and Both Plastic and Ceramic Chip Carriers S N 5 4 A S 1 181 . . . J T OR J W PAC KA G E S N 7 4 A S 1 181 . . . D W , N T, OR N W P AC KA G E

D1915

Abstract: IC-033 SN74AS1181 25A2s1 SN74AS882
Contextual Info: SN54AS1181, SN74AS1181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS PRODUCT PREVIEW D 1 91 5 , M A Y 1 9 8 5 — R E V IS E D M A Y 1 9 8 6 S N 5 4 A S 1 181 . . . J T OR J W PAC KA G E S N 7 4 A S 1 181 . . D W , N T, OR N W P AC KA G E Package Options Include Plastic "Sm all

BD182

Abstract: BD183 BD 782 BD181 T800MA BD 183 J BD 183
Contextual Info: BD 181 B D 182 BD 183 PNP S ILIC O N TR A N S IS TO R S , HOMOBASES TR AN S IS TO R S PNP S IL IC IU M , HO M O B A S E S - LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance - High current switching BD 181 BD 182 BD 183

LCD EPSON sed1181

Abstract: SED1181 SED1278F PF471 40 PIN LCD MONITOR CONNECTION DIAGRAM 16 x 2 lcd display
Contextual Info: EPSON PF471 -04 S E D 1 181 F la/D la Dot Matrix Extension LCD Driver • 64-bit High Voltage Outqut • Displat Duty Static to 1/32 • CM OS High-Voltage Process • OVER VIEW T h e S E D 1 181 F l a is a s e g m e n t colum n d river c a p a b le of driving a high-contract, lo w -cap acity dot m atrix

PA-QFE160SA-P-Z-02

Contextual Info: PA-QFE160SA-P-Z-02 W Map 1 16 31 46 61 76 91 106 121 136 151 166 181 196 211 226 241 256 271 271 256 241 226 211 196 181 166 151 136 121 106 160 158 156 154 152 140 130 128 126 124 122 2 1 4 3 6 5 8 14 9 10 16 12 18 20 24 91 76 120 120 119 117 118 118 117

s22b

Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­

PA-QFE160SB-P-Z-02

Contextual Info: PA-QFE160SB-P-Z-02 W Map 1 16 31 46 61 76 91 106 121 136 151 166 181 196 211 226 241 256 271 271 256 241 226 211 196 181 166 151 136 121 106 160 158 156 154 152 140 130 128 126 124 122 2 1 4 3 6 5 8 14 9 10 16 12 18 20 24 91 76 120 120 119 117 118 118 117

RG178

Abstract: S151 RG178 cable
Contextual Info: P /N S181FL—L—RMM—2450 Alternative Connectors .Straight M M C X Plug P /N : S 181 FL—L—MM—2450 Electrical Properties: en oo co 0 0 .2 4 6 .0 9 — in Frequency Range: Impedance: VSWR: Gain: Radiation: Polarization: Wave: 2 .4 ~ 2 .5 GHz 50Q nom inal

JE170

Contextual Info: MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 M JE170,171,172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 N P N PLASTIC POWER TRANSISTORS 'Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR

25CK

Contextual Info: PART NUMBER O C P -P C D 114 / X UNCONTROL­LED DOCUMENT REV. I E.C.N. NUMBER AND REVISION COMMENTS TOP VIEW ANDDE MARK 1. 2. 3. 4. ANODE CATHODE EMITTER COLLECTOR 4,60 LO,181] h- 6,50 [0 ,2 5 6 ] n 0,40 LO,016] 4 0,26 [0,010] 2 RLS, 13,00° ,62 [0,300]

Contextual Info: DELTA P/N : HCB106480N Series Mechanical dimensions Dimensions Unit : mm A 9.6 MAX B 6.4 MAX C 8.0 MAX D 2.15 E 2.0 F 2.45 G 3.7 H 9.7 Electrical Characteristics @ 25℃, 100KHz, 1V Delta P/N HCB106480N-101 HCB106480N-121 HCB106480N-151 HCB106480N-181 HCB106480N-221

sis5513

Contextual Info: Pentium/P54C PCI/ISA Chipset 5. Mechanical Dimension 5.1 SÌS5511, SÌS5512, SÌS5513 208 pins QFP208-P (208-Pin Plastic Flat Package) Unit:mm 3 0 .6 + 0.3 2 8 .0 + 0 .2 ' Preliminary VI. 2 June 14, 1995 181 Silicon Integrated Systems Corporation