P 181 V Search Results

BS208

Abstract: BS-208
Contextual Info: BS208 DMOS Transistors P-Channel TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) max. ∅ .022 (0.55) ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance

Contextual Info: S N 5 4 A S 1 181. S N 7 4 A S 1 181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS D 19 15 , M A Y 1985 Package Options Include Compact 300-m il or Standard 600-m il DIPs and Both Plastic and Ceramic Chip Carriers S N 5 4 A S 1 181 . . . J T OR J W P AC KAG E

DB-1MS

Contextual Info: SIEMENS BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz Q62702-F1271 1=C It RFs m B F P 181 PO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: jtià < m an A M P c Low Noise Amplifier, 8.5 dB Gain 10 - 400 MHz AM-/AMC-/AMS-181 Features • TO-8-1 1.5 dB T ypical M id band N oise Figure • +31 dB m T ypical M idband In terce p t • Id eal fo r B ro a d b a n d IF A pplications • Fully H erm etic P ack ag e AMS-181

Contextual Info: P /N I S 181 BC—2450S Alternative Connectors .TNC Reverse Polarity Plug female P /N : S181 BR—2450S Electrical Properties: Frequency Range: Impedance: VSWR: Gain: Radiation: P olarization: Wave: 2 .4 ~ 2 .5 GHz 50Q nom inal < 2 .0:1 2 dBi Omni Vertical

siemens ferrite n22 p14

Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
Contextual Info: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches

BD182

Abstract: BD183 BD 782 BD181 T800MA BD 183 J BD 183
Contextual Info: BD 181 B D 182 BD 183 PNP S ILIC O N TR A N S IS TO R S , HOMOBASES TR AN S IS TO R S PNP S IL IC IU M , HO M O B A S E S - LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance - High current switching BD 181 BD 182 BD 183

s22b

Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­

JE170

Contextual Info: MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 M JE170,171,172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 N P N PLASTIC POWER TRANSISTORS 'Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR

sis5513

Contextual Info: Pentium/P54C PCI/ISA Chipset 5. Mechanical Dimension 5.1 SÌS5511, SÌS5512, SÌS5513 208 pins QFP208-P (208-Pin Plastic Flat Package) Unit:mm 3 0 .6 + 0.3 2 8 .0 + 0 .2 ' Preliminary VI. 2 June 14, 1995 181 Silicon Integrated Systems Corporation

Contextual Info: Tolerances 1 20 0.2 - LE A D FREE 20-30=+/-0.3 30-40=+/-0.4 40-50=+/-0.5 50-100=+/-0.75 100-300=+/-1.5 Angles=+/-1 181 RoHS Dimensions are in Millimeters • ■ ■■ R e visio n s D e scri ptio n /A p p ro v e d /D a te A p p ro v e d D ate M .H . 1 2 /2 3 /0 3

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL31C181JGFNFNE CAP, 180㎊, 500V, ±5%, C0G, 1206  Description :  Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric CL 31 C 181

Contextual Info: UNCONTROLLED DOCUMENT 04,60 [ 00 ,181] PART NUMBER REV. SSL-LX4064SPGD 04.00 [ 00 .157] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN PEAK WAVELENGTH lf= 2 Q m A MAX UNITS 562 FORWARD VOLTAGE REVERSE VOLTAGE TYP 2.2 TEST COND nm 2.6 Vf 5.0

m1104

Abstract: M2156 M3105 M1107 M1103 M8847 M3151 M6521 M1108 M6515
Contextual Info: 147 Central Avenue Hackensack, New Jersey 07601 Tel: 201-489-8989 • Fax: 201-489-6911 CHICAGO MINIATURE LAMP, INC. WHERE INNOVATION COMES TO LIGHT T-1 1/2 Wedge Base .197 MAX . .571 MAX . .217 MAX . .181 MAX . P art Number Des ign V oltage A mps C M6502

Contextual Info: QBH-181 Amplifier P e rfo rm a n c e Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

Contextual Info: DATE REVISED: 7/11/06 CATALOG NUMBER B 0 1 5 —D 1 1 - 0 2 MATERIAL AND FINISH HOUSING, PORT PLUG AND CENTER CONTACT: BeCu; GOLD PLATE 5 0 - 1 0 0 MICROINCHES OVER NICKEL PLATE 50 MICROINCHES MIN. DIELECTRIC: VIRGIN PTFE R /P .236 .150 .181 .024 JF .0910

PEC 348

Abstract: rectifier bridge W02G W01G 348 c
Contextual Info: 0001752 os • WÊFa A dvanced m W.Æ P ower rJ m Technology• W005G thru W1OG 1.5 AMP VOLTAGE RANGE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIERS CURRENT 1.5 Ampere 50 to 1000 Volta FEATURES r • Rating to 1000V PRV .348 iaw DIA 8.84) .181 (4.6) .156 (4.0)

000w212

Abstract: K10W raychem 222k174 RT1325 RT-1325 RK-6713 raychem ED 7 6713 polyolefin elastomer .2As
Contextual Info: t t / c a Specification Electronics Raychem Control Drawing 222K121 thru 185 s u p p l ì ed. a Part as b) Part afte r recovery. unrestricted 10 .181 D i o ^ P o t t i n g Port J ‘ 12) D ia P o t t i n g DIA Por t Dia Hole DIMENSIONS in mi Li¡metres in inches,for reference)

MO-169

Abstract: TO263 7 1 LAND PATTERN
Contextual Info: RE V I S I O N S LTR D DESCRIPTION REVISE & REDRAW P ER CURRENT STD E.C.N. DATE 12 181 06/02/1999 BY/APP'D T L/ .050 TYP [1.27] (.085 TYP) [2.16] LAND PATTERN RECOMMENDATION S C A L E : 5X CONTROLLING DIMENSION IS INCH VALUES IN [ ] ARE MILLIMETERS .050+.002

Contextual Info: 6_ APPROVED: . DATE:_ TITLE: .272 [6.90] .181 [4.60] .017 [0.44] .161 [4.10] £ nnnnn R FFFEFER t .122 .063 [1.60] [3.10] T J .232 [5.90] T~c .370 [9.40] T .217 [5.50] 'M U i.390 [9.90] SPECIFICATIONS: Material: Insulator: H i-Tem p Termoplastic, rated U L 9 4 V -0

SSL-LX4064USBD

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSL-LX4064USBD CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S .D . HANDLING PROCEDURES WHEN WORKING WITH THIS PART. 04,60 [ 0 0 ,181] REV. 04.00 [0 0 .1 5 7 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 T PARAMET[R MIN

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL31C181JHFNNNE CAP, 180㎊, 630V, ±5%, C0G, 1206  Description :  Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series CL 31 C 181 J H F N N N E ① ② ③

SSL-LX4064HD

Contextual Info: UNCONTROLLED DOCUMENT REV. A 04,60 [ 00 ,181] PART NUMBER REV. SSL-LX4064HD A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10BRDR. & REDRAWN IN 3D. 4 .1 8 .0 1 04.00 [ 00 .157 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN PEAK WAVELENGTH

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL10C181JB8NFNC CAP, 180㎊, 50V, ±5%, C0G, 0603  Description :  Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series CL 10 C 181 J B 8 N F N C ① ② ③