P 131 GB Search Results

BUK426-1000A

Abstract: BUK426-1000B BUK426-1OOOA BUK426-100 BUK426-1000
Contextual Info: N AMER P H I L I P S / D I S C R E T E ESE D ^53=131 QOEDEbO S BUK426-1OOOA BUK426-1OOO B PowerMOS transìstor T- 3 ^-| GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuli-pack envelope. The device is intended for use in

BUK627-400A

Abstract: BUK627-400B ha 431 transistor transistor 431 N
Contextual Info: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.

BUZ350

Abstract: IY TRANSISTOR BUZ35 at ma hi mvs
Contextual Info: N AUER P H I L I P S / D I S CR E TE DfaE D PowerMOS transistor ^ 53=131 0 0 1 4 7 5 2 7 BUZ350 T-3^-/3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ211

Abstract: T-39-13 IEC134 T2113
Contextual Info: PowerMOS transistor_BUZ211 N AMER P H IL IP S/ DI SC RE TE ObE D • ^53=131 0014bbö 1_ 7 ■ r - s i - 1 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode PARAMETER SYMBOL field-effect power transistor in a Drain-source voltage

LWE2025R

Abstract: Transistor 5331 class-A amplifier
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • ^53=131 OOISQES 3 ■ LWE2D25R A M IC R O W A V E LINEAR POW ER T RA N SIST O R N-P-N silicon power transistor for use in a common-emitter, ciass-A amplifier up to 2,3 GHz in c.w.

TB1231N

Abstract: 1231N
Contextual Info: TOSHIBA TB1231N TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC T R1 131 N • mmr m v ■ m 'm P A L /N T S C 1CHIP IF + VCD PROCESSOR IC TB1231N is the IF & Video processing IC for PAL/NTSC color TV system. This IC demodulates PAL/NTSC PIF, SIF and composite video signal to R /G /B primary colors and

IEC134

Abstract: LV2327E40R transistor marking AR ghz TRANSISTOR marking ar code
Contextual Info: -1-1- N AMER PHILIPS/DISCRETE ObE D ^53=131 ÜQ150G1 I LV2327E40R r- 33-£>? MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r use in a com m on-em itter class-A linear wideband power am plifier from 2 ,3 to 2 ,7 G Hz. Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

it27

Abstract: 6234B ibs STME s7-300 examples interbus rs485
Contextual Info: IBS OPTOSUB-MA/M/L-LKOPC -2MBD Optical Fiber Converter With a Data Transmission Rate of 500 kbaud or 2 Mbaud Data Sheet 6234B 6 2 3 4 A 0 0 0 07/2001 Function Please observe the Optical Fiber Installation Guidelines (DB GB IBS SYS FOC ASSEMBLY). The IBS OPTOSUB-MA/M/L-LK-OPC(-2MBD)

s7-400 output module

Abstract: ibs s7 400 dsc optical cables color code s7-300 examples it27
Contextual Info: IBS OPTOSUB-MA/M/R-LKOPC -2MBD Optical Fiber Converter With a Data Transmission Rate of 500 kbaud or 2 Mbaud Data Sheet 5571D 5 5 7 1 A 0 0 0 07/2001 Function Please observe the Optical Fiber Installation Guidelines (DB GB IBS SYS FOC ASSEMBLY). The IBS OPTOSUB-MA/M/R-LK-OPC(-2MBD)

P 131 GB

Abstract: skiip 632 gb 120 315CTV713 skiip gb 120
Contextual Info: 5EMIKR0N SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol Values Unite 1200 900 600 - 4 0 . + 150 3000 51 600 1200 6480 210 V |Conditions 1> IGBT & Inverse Diode V ces V c c 9> Operating D C link voltage lc T i 3 Theatsink ~ 25 °C V,sol 4) IGBT & Diode

H-17

Abstract: H-18 H-19
Contextual Info: — 210 — l- 7 > ÿ 7 ? - iÿ i- A y 'in / N 'f t t 'ii/ ¡ GB T ÎÎ 2. AC, S £ V CE3 VoES c CP [F (Ins) (V ) (V ) (A ) (A ) (A ) I FU Pe (lis ) (a i) (A ) (W ) T , T . t, V il0 ( & 2) (°C ) (°C) (V ) I GE S ( n A) ft * ! CBS VcE (V) (mA) ft * VcBS

bsm10gd100dn1

Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Contextual Info: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2

TO-131 Package

Contextual Info: group Data Sheet April 1998 Lucent Technologies Bell Labs Innovations 131-Type Long-Wavelength PIN Photodetector Features Wavelength: 1.1 |a,m— 1.6 |a,m Planar structure for high reliability Low-profile, 8-lead DIP or 3-lead, coaxial package equivalent pinout

H-17

Abstract: H-18 H-19 H-22 TT 2206
Contextual Info: - 208 - I- 7 / ^ x 5 ' • t ' / i - i = y ' 3 > N í - + * A- I GB T ) i > ^ > X à > h • 9 -f ~f MGI-1 MGi-2 9 ° -O E 1 1 ¿ i G (B ) ?È 1 . Te = fi S g VcES V GE S k ft m c CP ( , (1ms) (V ) (V ) (A ) (A ) n ( T . =25°C) (A ) 1 FM Pc (1ms) (a n

MARKING GA

Abstract: A779 baw78c
Contextual Info: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8

Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. I F L - L X 8 1 11 GBA A E.C.N. NUMBER AND REVISION COMMENTS DATE 04.1 2.07 E.C.N, # 1 1 1 4 9 . 3 .3 5 .1 3 2 MAX ELECTRO-OPTICAL SPECIFICATIONS OPERATING VOLTAGE VAC OR VDC: 6 .5 (.2 5 6 ) MAX 1 .5 H .O CURRENT DRAW DESIGN VOLTS:

Contextual Info: LSH33 32-bit Barrel Shifter with Registers D E V IC E S IN C O R P O R A T E D [FÊftTÜRES ''•:' DESCRIPTION □ 32-bit Input, 32-bit Output Multi­ plexed to 16 Lines □ Full 0-31 Position Barrel Shift Capability □ Integral Priority Encoder for 32-bit

GB 44-706

Abstract: 44-706 P 131 GB g8hz GB 44706A G2010 G-45706A 13302 GA44.706A M6HZ
Contextual Info: i VR TYPES v eff recommandée V RRM V 0,7 A * GA GB GD GF t amb = 80°C tamb = 80°C (A) (A) 10 ms Diodes @ \/ r 25°C IfJA) (A) 125°C ImA) TYPES Q 100 200 400 600 GO 13.302 GF 13.302 GH 13.302 2,7 A 50 80 150 250 0,3 1,25 4 10 CONTROLLED AVALANCHE SERIE

mg75

Abstract: H-17 H-18 H-19 H-22 06a3 M4A1
Contextual Info: - 208 - I- 7 / ^ x 5 ' • t ' / i - i = y ' 3 > N í - + * A- I GB T ) i > ^ > X à > h • 9 -f ~f MGI-1 MGi-2 9 ° -O E 1 1 ¿ i G (B ) ?È 1 . Te = fi S g VcES V GE S k ft m c CP ( , (1ms) (V ) (V ) (A ) (A ) n ( T . =25°C) (A ) 1 FM Pc (1ms) (a n

DIRIS A40

Abstract: transformador transformador 120 v a 24 v DIRIS C fonction iec 62053-21 3 FASE WIRE a40 diris 3NBL socomec iec 62053-21 kwh
Contextual Info: 876_304_a 23/12/04 12:24 Page 1 DIRIS A40/A41 Notice d’utilisation Operating instructions - Bedienungsanleitung Istruzioni per l’uso - Gebruiksaanwijzing Instrucciones de servicio - Manual de instruções F GB SOCOMEC GROUP SWITCHING PROTECTION & UPS D

E50R

Abstract: IEC134 LV1721E50R 7Z94095
Contextual Info: N AMER P H I L I P S / D I S C R E T E GbE~1 • □ GlM'ìfl'ì S WÊ ' LV1721Ë50R , T -3 3 -O '? A MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-emitter, class-A amplifier from 1,7 GHz to 2,1 GHz in c.w. conditions in m ilitary and professional applications.

GBP200

Abstract: GBP2010
Contextual Info: DATA SHEET GBP200~GBP2010 IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes GBP Unit: inch mm Recognized File #E228882 FEATURES .581(14.75) • Plastic material has Underwriters Laboratory Flammability Classification 94V-O

BMA 150

Abstract: STS-192 STS-48 TFEC0410G MC68360 MPC860 wiper 100 pll 16-POL
Contextual Info: a e re 8 AdLib systems OCR Evaluation Operational Description July 2002 TFEC041OG 2 .5/10 Gbits/s Optical Networking Interface with Strong/Weak FEC and Digital Wrapper 1 Document Organization This document is primarily intended for designers who require design implementation information and block

3504W

Abstract: 3510W
Contextual Info: A DVANCED • PO W ER T e c h n o lo g y 9 0001714 oasTR O i tm ■ GBPC35005 thru GBPC3510 VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIERS FEATURES MP MP-W • Rating to 1000V PRV r "METALHEAT SINK I_ • 400 amperes surge capabllty