P 112 A Search Results

R 282 241

Contextual Info: MOUNTING INSTRUCTIONS M 01 WASHER WASHER B R A ID CLAM P REAR IN S U LA TO R C O NTACT FRO NT IN S U LA TO R BO DY p^/ir7i BACKNUT F L A T G ASKET CONNECTORS R R R R R R .2 2 4 5,7 .177 (4 ,5 ) ^.323 (6.2JÍ 112 112 112 112 112 112 003 005 203 205 303 305

Contextual Info: Alio Rechle vorbehallen/ 411 rights reserred 3 k 5 2 1 Moling foce according to : MlL-C-24308 / DIN 41652 / CECC D C P r i n t e d board layout component side B 09 66 09 66 09 66 09 66 09 66 09 66 Port 112 3601 112 6601 112 7601 112 3602 112 6602 112 7602

Contextual Info: Ille Rechte Vorbehalten/ HU rigkts ris a n i Mating face according to : MIL-C-24308 / DIN 41652 / CECC 75301-802 P r i n t e d board layout com ponent side 09 66 112 6601 09 66 112 7601 Dot. M3 Detail. 27/nov/00 M3 09 66 112 5601 M3 09 66 112 6602 4-40 UNC

Contextual Info: INSTALLATION INSTRUCTIONS TSL Series Industrial Power Supply Order Code AC-Input Voltage Range Output Power max. TSL 030-112 93VAC – 263VAC 30 Watt TSL 030-124 TSL 060-112 TSL 060-124 Universal Input 60 Watt 50 / 60Hz * TSL 120-124 P 115VAC / 230VAC * TSL 120-148 (P)

KPE-112

Abstract: piezo transducer
Contextual Info: PIEZO TRANSDUCER 8 2 " » * . Shape KPE-112 R o H S Compliant Available eg K P £ G 1 12 [ I M o d el N um b er I K p E -112 Max 30 Rated Voltage (Vp-p) Current Consumption (mA) Sound Pressure Level (dB) Electrostatic Capacity (pF) M ax 11@ 10Vp-p.Square W ave.4.0KH z

74AS112

Abstract: DM54AS1121DM74AS112 S112
Contextual Info: DM54AS 112/ DM74AS 112 PRELIMINARY %9A National ÆjA Semiconductor DM54AS1121DM74AS112 Dual J-K Negative-EdgeTriggered Flip-Flops with Preset and Clear General Description Features The 0M 54AS112 is a dual edge-triggered flip -flo p . Each flip -flo p has individual J, K, c lo c l^ c le a r and preset inputs,

Contextual Info: Channel Link Demonstration Kit N Channel Link Demonstration Kit User Manual P/N CLINK3V48BT-112 Rev 2.2 Interface Products Information contained in this document is subject to change National Semiconductor Corporation Interface Products LIT# CLINK3V48BT-112-UM

280VDC

Abstract: TIS 300-124 P
Contextual Info: INSTALLATION INSTRUCTIONS TIS Series Industrial Power Supply Order Code TIS 50-112 TIS 50-124 AC-Input Voltage Range Output Power max. 93 – 264VAC Universal Input 50 Watt TIS 75-112 TIS 75-124 TIS 75-148 115VAC/230VAC selectable * TIS 150-124 P 93 – 132VAC

LM312

Abstract: LM112 LM3120 LM112H LM212 LM212H LM312H Raytheon Company
Contextual Info: Precision Operational Amplifiers 112 212 312 i ^ - GENERAL DESCRIPTION DESIGN FEATURES T h e L M 112, L M 2 1 2 , and L M 3 1 2 are S u p er Beta o p e ra tio n a l a m p lifie rs , each fa b ric a te d on a s ilic o n c h ip b y th e pla n a r e p ita x ia l process.

741 voltage follower

Contextual Info: Am 112/212/312 Compensated, High-Performance Operational Amplifier Distinctive Characteristics • The A m 1 12 /212 /3 12 are fu n ctio n a lly, electrically, and pin-for-pin equivalents to the National L M 112/212/312. • Low in p u t bias currents: 800pA

Contextual Info: Rev APPROVED: DATE:_ Description AW0# Date 9/1/06 RELEASED • Appr TITLE: .232 [5.90] n p i .494 [12.55] 1 UUUUUUUUUUUMJÜUUUUUUUUUU 1 1' .125 [3.18] - .112 [2.84] - I r -B - -«— .109 [2.77] .112 I Iz [2.84] l z .o 'M — I O O O o j O O O — IO O O

elektronik DDR

Abstract: DL112D Scans-048 DSAGER00017 ddr elektronik frankfurt Frankfurt Oder
Contextual Info: m ö[h^[s3elBl-cör*anil4 DL 112 0 Internationaler Vergleichstyp: SN 74 LS 112 N Z w eifa ch JK-Füp-Fäop In L o w -P o w e r-S ch o tiky-T e ch n o io g ie Der DL 112 D enthält zwei flankengetriggerte JK-Fllp-Flops m it Setz und Rücksetzein­ gang. Die Information an den Eingängen J und K w ird m it der H-L-Ranke des Takt

P-112

Abstract: p112 112-P P-152 P1521
Contextual Info: 0 POWER DIVIDERS / COMBINERS P-112 & P-152 1 to 400 MHz / 3-Way / Uniform Phase & Amplitude Bal. / Low Insertion Loss / Broadband / TO-5 PRINCIPAL SPECIFICATIONS Model Number Freq. Range, MHz Frequency Isolation, Insertion Phase Amplitude VSWR Internal Performance,

variac

Abstract: CMV-20
Contextual Info: TOLERANCES 0-10mm 10.1-50mm 50.1-250mm >250mm VARIAC MODEL INPUT OUTPUT 1 OUTPUT 2 RATED > lu ±0.2mm ±0.5mm ±1.0mm ±2.0mm TERMINATIONS M5 STUDS A LIVE l/P FOR 100% O/P B LIVE l/P FOR 112% O/P C NEUTRAL l/P AND O/P D CENTRE TAP FOR BUCK-BOOST E LIVE O/P (VARIABLE)

Contextual Info: Dîalîght 591 7602-1XX True Surface Mount LED - Part No.* 591-7602-1 xx COLLECTOR ID 2.1 6.1 [.082] ' [.240] ' Configuration 900 nm Phototransistor T ~ 2.8 [. 112] A p p licatio n s [.004] MAX. BELOW SURFACE A • Control and drive circuits v LED LEAD SOLDERING

vt180

Contextual Info: VT 180 Dimensions in mm -N/-P 112 -N/-P 142 5.5 „ 63 . 3 - 30 - - s tf— - “ - 0- su i- SCANNING DISTANCE 110 und 400 m m -^ - -N/-P 410 -N/-P 440 69- 5.5 - 30 - - 20.9 14.9 Features: • Supply connection reversepolarity protected • LED status indicator

Contextual Info: ]> • N AUER PHILIPS/DISCRETE bb53T31 0027bb0 112 H A P X BCY87 to 89 N-P-N SILICON PLANAR DUAL TRANSISTORS FOR DIFFERENTIAL AMPLIFIERS Matched dual n-p-n transistors in a TO-71 metal envelope with all leads insulated from the case. They are primarily intended for differential amplifier applications in general industrial service; e.g.

D92N

Contextual Info: »v^-r‘^ 'V - M P T 1-112-07-G -T M a te i w ith : MPS NO. PINS PER ROW MPT1 Specifications: MPT1 I In sulator M aterial: Nature I Liquid Crystal P olym sr Term inal Material: Phosphor Bronze O p erating Tem p Range: -65°C to + 1 2 5 °C with Gold -65°C to +105°C with Tin

friwo

Abstract: hochspannung fw7650 SFU 450 B
Contextual Info: LIEFERVORSCHRIFT SPECIFICATION FRIWO FRIWO Gerätebau GmbH V o n -Lieb ig -Str. 11 D-48346 Ostbevern Tel.: 02532/81-0 Fax: 02532/81-112 h ttp ://w w w .friwo.de M P P 6 - 12V F irmo / D IS T R IB U T IO N Compony Ge r ät e ty p / Typ FW7650/12 Artikel-Nr. / Order-No.

Contextual Info: A L P H A N U M E R IC SERIES INDEX SE R IE S PAGE 7 B B . .74 7 N B . . 74 7 S B . . 74 A F L . .111 A N T . . 87-88 A R C . . 112

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0D3D5SD 112 H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: SDN520C N-Ch: 4.5 A, 20 V, RDS ON 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DFN2x2-6L DESCRIPTION These miniature surface mount MOSFETs utilize a

mcl610

Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
Contextual Info: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR

MCT8 opto

Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR