BBS3T131 Search Results

Contextual Info: BD840 BD842 BD844 _ J \ _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic TO-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843.

Contextual Info: BST74A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0D3D5SD 112 H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: bb53T31 00321AT T7S 1 AP X Philips Semiconductors Product specification Video output amplifier OM976 - N AUER PHILIPS/DISCRETE FEATURES PINNING • DC coupled video amplifier for cathode drive, with a positive going video input PIN CONFIGURATION PIN • Low internal thermal resistance

Contextual Info: N AMER PHILIPS/DISCRETE tiTE T> bbSBTBl DDBbbflS bTS H A P X BYW95A; B; C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ _ _ _ AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are