OVERLAY TRANSISTOR Search Results

2n3375

Abstract: 2n3375 transistor 2N3553
Contextual Info: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes

2N3553

Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor
Contextual Info: b'îE D • bbS3T31 □DE‘ï7bb 3Tb BiAPX 2N3375 2N3553 2N3632 A SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in T 0 -6 0 metal envelopes with the electrodes

2N3927

Abstract: 2N3926 2N3924 2N3924h 7z08 4312 020 36640 philips 1969 transistor 2N3 400Ic philips 1968
Contextual Info: MIE D m 711Gfl2b 002Ö057 1 2N3924 2N3926 2N3927 [PHIN PHILIPS INTERNATIONAL r - 3 3 - O SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in aTO-39 metal envelope with the collector connected to the case. The 2N3926 and the 2N3927 are n-p-n overlay transistors in T0-60 metal envelopes with the emitter

JRC2244

Abstract: "rf modulator" LM1889 A3126 LM1889 video display processor
Contextual Info: Philips Semiconductors Add Text Overlay to Any Video Display C IR C U IT C E L L A R [ l i [ N j \ K | , THE COMPUTERl APPLICATIONS JOURNAL October/Novem ber 1992 274 Philips Semiconductors Add Text Overlay to Any Video Display Add Text Overlay to Any Video

2N3553

Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
Contextual Info: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes

2n4427

Abstract: 2N3866
Contextual Info: tPiotLati, Gnu. <J\fuxr TELEPHONE: 973 376-2922 20 STERN AVE. SPHINQRELD, NEW JERSEY 07081 U S.A. (212)227-6005 FAX: (973) 376-6960 Silicon planar epitaxial overlay transistors 2N3866; 2N4427 APPLICATIONS DESCRIPTION NPN overlay transistors in TO-39 metal packages with the

2N3927

Contextual Info: bTE D • 2N3924 2N3926 2N3927 bb53*131 003*1766 Tb7 « A P X N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N 3 9 24 is an n-p-n overlay transistor in aT O -39 metal envelope with the collector connected to the case. The 2 N 3 9 26 and the 2N 3 9 27 are n-p-n overlay transistors in TO -60 metal envelopes with the emitter

SDL-4301

Abstract: 4.43mhz tdk MC1378 MC1378P Toko 166nnf
Contextual Info: MC1378 Color Television Composite Video Overlay Synchronizer The MC1378 is a bipolar composite video overlay encoder and microcomputer synchronizer. The MC1378 contains the complete encoder function of the MC1377, i.e., quadrature color modulators, RGB matrix, and

2n4427

Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
Contextual Info: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.

Contextual Info: TELEPHONE 973 376-2922 (212)227-6005 FAX: (973) 379-8980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N3924 2N3926 2N3927 SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case.

t 3866 power transistor

Abstract: transistor 3866 s t 3866 transistor transistor 3866
Contextual Info: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.

JRC2244

Abstract: philips lcd tv inverter schematic IC 75176 circuit details LM1889 schematic LCD inverter lm339 signetics rf Receiver Circuits color pal transistor pattern generator schematic lm1889 circuit diagram 80C51 87C054
Contextual Info: P h ilip s S e m ic o n d u c to r s Add Text Overlay to Any Video Display CIRCUIT CELLAR □QOS , THE COMPUTER APPLICATIONS JOURNAL MEASUREMENT & CONTROL SPECIAL SECTION: Embedded Graphics & Video Time Domain Reflectometer Overlay Text on Video October/November, 1992 — Issue #29

AM1517-025

Abstract: S042
Contextual Info: AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

Contextual Info: SGS-THOMSON ittJÈTMDigl MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . oo:1 VSWR CAPABILITY i LOW THERMAL RESISTANCE . INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE

8w RF POWER TRANSISTOR NPN

Abstract: gold capacitor RF POWER S-band TRANSISTOR 82731 thomson capacitor AM82731-003 S042 82731003 radar amplifier s-band 2.7 2.9 GHZ
Contextual Info: AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

AM80912-030

Contextual Info: AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

AM80912-030

Abstract: transistor speciality 50W power amplifier
Contextual Info: AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

AM83135-050

Contextual Info: AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

2n3866

Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial

MSC81402

Abstract: S010
Contextual Info: MSC81402 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIERS APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION HIGH GAIN & COLLECTOR EFFICIENCY RUGGED OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 2.0 W MIN. WITH 10.0 dB GAIN

AM82731-003

Abstract: S042
Contextual Info: AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

ic 7475

Abstract: Electronic ballast 40W IC 7475 application 40w electronic ballast 7475 pin out sheet ic 7475 data sheet SD8250 STAN250A
Contextual Info: SD8250 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

SD5000

Abstract: M122 S10A015
Contextual Info: SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . PRELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION POUT = 1.5 W MIN. WITH 9.5 dB GAIN

AM82731-050

Abstract: radar amplifier s-band 2.7 2.9 GHZ
Contextual Info: AM82731-050 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE