OVERLAY TRANSISTOR Search Results

OVERLAY TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

OVERLAY TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2n3375 Abstract: 2n3375 transistor 2N3553 Contextual Info: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes	OCR Scan	2N3375 2N3553 2N3632 2N3553 The2N3375 2N3375 2N3632 2n3375 transistor	PDF
2N3553 Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor Contextual Info: b'îE D • bbS3T31 □DE‘ï7bb 3Tb BiAPX 2N3375 2N3553 2N3632 A SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in T 0 -6 0 metal envelopes with the electrodes	OCR Scan	bbS3T31 2N3375 2N3553 2N3632 2N3553 2N3375 2N3632 T0-60 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor	PDF
2N3927 Abstract: 2N3926 2N3924 2N3924h 7z08 4312 020 36640 philips 1969 transistor 2N3 400Ic philips 1968 Contextual Info: MIE D m 711Gfl2b 002Ö057 1 2N3924 2N3926 2N3927 [PHIN PHILIPS INTERNATIONAL r - 3 3 - O SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in aTO-39 metal envelope with the collector connected to the case. The 2N3926 and the 2N3927 are n-p-n overlay transistors in T0-60 metal envelopes with the emitter	OCR Scan	Q02flGSfl 2N3924 2N3926 2N3927 T-33-0? 2N3924 2N3926 2N3927 T0-60 2N3924h 7z08 4312 020 36640 philips 1969 transistor 2N3 400Ic philips 1968	PDF
JRC2244 Abstract: "rf modulator" LM1889 A3126 LM1889 video display processor Contextual Info: Philips Semiconductors Add Text Overlay to Any Video Display C IR C U IT C E L L A R [ l i [ N j \ K \| , THE COMPUTERl APPLICATIONS JOURNAL October/Novem ber 1992 274 Philips Semiconductors Add Text Overlay to Any Video Display Add Text Overlay to Any Video	OCR Scan	87CQ54 87C054 87C054 80C51 JRC2244 "rf modulator" LM1889 A3126 LM1889 video display processor	PDF
2N3553 Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E Contextual Info: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes	OCR Scan	2n3375 2n3553 2n3632 2N3632 T0-60 WE VQE 23 F transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E	PDF
2n4427 Abstract: 2N3866 Contextual Info: tPiotLati, Gnu. <J\fuxr TELEPHONE: 973 376-2922 20 STERN AVE. SPHINQRELD, NEW JERSEY 07081 U S.A. (212)227-6005 FAX: (973) 376-6960 Silicon planar epitaxial overlay transistors 2N3866; 2N4427 APPLICATIONS DESCRIPTION NPN overlay transistors in TO-39 metal packages with the	Original	2N3866; 2N4427 O-39/1 2N3866 2n4427 2N3866	PDF
2N3927 Contextual Info: bTE D • 2N3924 2N3926 2N3927 bb53131 0031766 Tb7 « A P X N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N 3 9 24 is an n-p-n overlay transistor in aT O -39 metal envelope with the collector connected to the case. The 2 N 3 9 26 and the 2N 3 9 27 are n-p-n overlay transistors in TO -60 metal envelopes with the emitter	OCR Scan	2N3924 2N3926 2N3927 bb53T31 7Z08I91 7Z08189 7Z08185 2N3927	PDF
SDL-4301 Abstract: 4.43mhz tdk MC1378 MC1378P Toko 166nnf Contextual Info: MC1378 Color Television Composite Video Overlay Synchronizer The MC1378 is a bipolar composite video overlay encoder and microcomputer synchronizer. The MC1378 contains the complete encoder function of the MC1377, i.e., quadrature color modulators, RGB matrix, and	Original	MC1378 MC1377, SDL-4301 4.43mhz tdk MC1378P Toko 166nnf	PDF
2n4427 Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640 Contextual Info: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.	OCR Scan	711Dfl2b 00L3b7fl 2N3866 2N4427 2N3866 711002b 00b3bÃ 2n4427 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640	PDF
Contextual Info: TELEPHONE 973 376-2922 (212)227-6005 FAX: (973) 379-8980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N3924 2N3926 2N3927 SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case.	Original	2N3924 2N3926 2N3927 2N3924 The2N3926 2N3927 2N392B	PDF
t 3866 power transistor Abstract: transistor 3866 s t 3866 transistor transistor 3866 Contextual Info: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.	OCR Scan	bb53131 2N3866 2N4427 t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866	PDF
JRC2244 Abstract: philips lcd tv inverter schematic IC 75176 circuit details LM1889 schematic LCD inverter lm339 signetics rf Receiver Circuits color pal transistor pattern generator schematic lm1889 circuit diagram 80C51 87C054 Contextual Info: P h ilip s S e m ic o n d u c to r s Add Text Overlay to Any Video Display CIRCUIT CELLAR □QOS , THE COMPUTER APPLICATIONS JOURNAL MEASUREMENT & CONTROL SPECIAL SECTION: Embedded Graphics & Video Time Domain Reflectometer Overlay Text on Video October/November, 1992 — Issue #29	OCR Scan	80C51-Based 87C054 JRC2244 philips lcd tv inverter schematic IC 75176 circuit details LM1889 schematic LCD inverter lm339 signetics rf Receiver Circuits color pal transistor pattern generator schematic lm1889 circuit diagram 80C51	PDF
AM1517-025 Abstract: S042 Contextual Info: AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	AM1517-025 AM1517-025 S042	PDF
Contextual Info: SGS-THOMSON ittJÈTMDigl MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . oo:1 VSWR CAPABILITY i LOW THERMAL RESISTANCE . INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE	OCR Scan	MSC81035MP 81035MP MSC81035MP MSC1035MP.	PDF

8w RF POWER TRANSISTOR NPN Abstract: gold capacitor RF POWER S-band TRANSISTOR 82731 thomson capacitor AM82731-003 S042 82731003 radar amplifier s-band 2.7 2.9 GHZ Contextual Info: AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	AM82731-003 AM82731-003 8w RF POWER TRANSISTOR NPN gold capacitor RF POWER S-band TRANSISTOR 82731 thomson capacitor S042 82731003 radar amplifier s-band 2.7 2.9 GHZ	PDF
AM80912-030 Contextual Info: AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	AM80912-030 AM80912-030	PDF
AM80912-030 Abstract: transistor speciality 50W power amplifier Contextual Info: AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	AM80912-030 AM80912-030 transistor speciality 50W power amplifier	PDF
AM83135-050 Contextual Info: AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	AM83135-050 AM83135-050	PDF
2n3866 Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial	Original	2N3866; 2N4427 SC08a O-39/1 2n3866 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427	PDF
MSC81402 Abstract: S010 Contextual Info: MSC81402 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIERS APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION HIGH GAIN & COLLECTOR EFFICIENCY RUGGED OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 2.0 W MIN. WITH 10.0 dB GAIN	Original	MSC81402 MSC81402 S010	PDF
AM82731-003 Abstract: S042 Contextual Info: AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	AM82731-003 AM82731-003 S042	PDF
ic 7475 Abstract: Electronic ballast 40W IC 7475 application 40w electronic ballast 7475 pin out sheet ic 7475 data sheet SD8250 STAN250A Contextual Info: SD8250 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	SD8250 STAN250A SD8250 ic 7475 Electronic ballast 40W IC 7475 application 40w electronic ballast 7475 pin out sheet ic 7475 data sheet STAN250A	PDF
SD5000 Abstract: M122 S10A015 Contextual Info: SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . PRELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION POUT = 1.5 W MIN. WITH 9.5 dB GAIN	Original	SD5000 S10A015 SD5000 M122 S10A015	PDF
AM82731-050 Abstract: radar amplifier s-band 2.7 2.9 GHZ Contextual Info: AM82731-050 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	AM82731-050 AM82731-050 radar amplifier s-band 2.7 2.9 GHZ	PDF

OVERLAY TRANSISTOR Search Results

OVERLAY TRANSISTOR Result Highlights (5)

OVERLAY TRANSISTOR Datasheets Context Search

2n3375

2N3553

2N3927

JRC2244

2N3553

2n4427

2N3927

SDL-4301

2n4427

t 3866 power transistor

JRC2244

AM1517-025

8w RF POWER TRANSISTOR NPN

AM80912-030

AM80912-030

AM83135-050

2n3866

MSC81402

AM82731-003

ic 7475

SD5000

AM82731-050