OS 135 DIODE Search Results

Contextual Info: ICS1494 Integrated Circuit Systems, Inc. Enhanced Video Dot Clock Generator Features Features • Low cost - eliminates need for multiple crystal clock os­ • 135 MHz Guaranteed Performance • Fast acquisition of selected frequencies cillators in video display subsystems

ics1494m

Contextual Info: ICS1494 Integrated Circuit Systems, Inc. Enhanced Video Dot Clock Generator Features Features • Low cost - eliminates need for multiple crystal clock os­ • cillators in video display subsystems 135 MHz Guaranteed Performance • Fast acquisition of selected frequencies

back Tunnel diode

Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Contextual Info: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth

TPD4112K

Abstract: TPD41112K VVS100
Contextual Info: TPD4112K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4112K The TPD4112K is a DC brushless motor driver using high-voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains a bootstrap circuit, PWM circuit, 3-phase

Temperature Sensor IC with HW Thermal Shutdown

Abstract: TPD4112K MARKING BB1 TPD41112K VVS100 DC brush MOTOR CONTROL IGBT
Contextual Info: TPD4112K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4112K The TPD4112K is a DC brush less motor driver using high voltage PWM control. It is fabricated by high voltage SOI process. It contains bootstrap circuit, PWM circuit, 3-phase decode logic,

MMD7001

Abstract: DP 704 C
Contextual Info: MMD7001 silicon MICROMINIATURE SILICON EPITAXIAL DUAL SWITCHING DIODE SILICON EPITAXIAL DUAL SWITCHING DIODE . . . designed fo r general purpose, high-speed switching applications. • High Breakdown Voltage — • Fast Reverse Recovery Tim e t rr = 3.2 ns (T y p ) @ I p = I r = 10 m Adc

ERZC14DK911

Abstract: 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K
Contextual Info: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and

Contextual Info: A ugust 1998 Revised Ja nuary 1999 SEMICONDUCTOR!!^ FC940L Low Voltage 1 to 18 Clock Distribution Device with Selectable PECL or LVTTL Input General Description Features T h e FC 940L is a 1 to 18 low voltage clock fanout buffer. The device allows for the selection of e ither differential

BSW 17

Contextual Info: TPD4101K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4101K The TPD4101K is a DC brush less motor driver using high voltage PWM control. It is fabricated by high voltage SOI process. The device contains a PWM circuit, 3-phase decode logic, level

Contextual Info: TPD4102K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4102K The TPD4102K is a DC brush less motor driver using high voltage PWM control. It is fabricated by high voltage SOI process. The device contains a PWM circuit, 3-phase decode logic, level

F 0094U

Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Light Emitting Diode (950 nm, 12 mil) F 0094U F 0094V Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse

FTH A 001 26 10

Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • BSS135 Vos 600 V ID 0.080 A ^DS on 6 0 £2 N channel Depletion mode High dynamic resistance Available grouped in Vosoh) Type Ordering Code Tape and Reel information Pin C onfigu ration Marking

1N5327

Abstract: 1N532 n 340 ad LT 83 ZENER 1N5j
Contextual Info: 1N6309 thru 1N6355 Microsemi Corp. SA S T A A S A , C A J-'or more information cali 7 ]4 | 9 7 9 -X 2 2 0 500 mW Glass Zener Diodes FEATURES • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION • NIETALLURGICALLY BONDED (ABOVE 6.2 VOLTS

Contextual Info: GaAs-Infrarot-Lumineszenzdiode mit erhöhter Strahlungsleistung 950 nm GaAs Infrared Emitting Diode(950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 20 mW @ 100 mA im TOPLED Gehäuse

HDIP26-P-1332-2

Abstract: tpd4123
Contextual Info: TPD4141K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4141K The TPD4141K is a DC brushless motor driver using high-voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains PWM circuit, 3-phase decode

TPD4121K

Abstract: TPD4123K VVS100 PWM IC 8 PIN DIP
Contextual Info: TPD4121K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4121K The TPD4121K is a DC brushless motor driver using high-voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains PWM circuit, 3-phase decode

TPD4122K

Abstract: tpd4122 TPD4123K VVS100
Contextual Info: TPD4122K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4122K The TPD4122K is a DC brushless motor driver using high-voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains PWM circuit, 3-phase decode

HDIP26-P-1332-2

Abstract: tpd4123 IC package code H,V
Contextual Info: TPD4142K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4142K The TPD4142K is a DC brushless motor driver using high-voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains PWM circuit, 3-phase decode

Contextual Info: Bulletin 127101 rev.A 09/97 International IQR Rectifier IRK. SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 135 A 140 A 160 A Features • H ig h v o lta g e ■ E lectrically Isolated base plate ■ 3000 V RMSIsolating voltage

Contextual Info: A I R C H I L D A ugust 1998 Revised January 1999 S E M I C O N D U C T O R TM FC940L Low Voltage 1 to 18 Clock Distribution Device with Selectable PECL or LVTTL Input General Description Features T h e FC 940L is a 1 to 18 low voltage clock fanout buffer.

Contextual Info: Micnosemi H m m Santa Ana, CA Progress Powered by Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX11P50A Features 500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode

Contextual Info: BAS28 y V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icrominiature envelope intended fo r surface mounting. It concerns fast-switching general-purpose diodes. Q UICK REFERENCE D A T A VR max. 75 V Repetitive peak reverse voltage

j235

Abstract: ef 16 transformer Scans-0017355 43 tube data
Contextual Info: TENTATIVE DATA IZ 2 TU II 8 * 01 DIODE M I N I A T U R E TYPE F IL A M E N T 234 2.47 T-5¿ 1 . 2 5 ± 5 Î VO LT S 0 . 2 6 5 AMP. AC OR DC 2.70 MAX. ANY MOUNTING P O S I T I O N „0.75" MINIATURE BUTTON 7 PIN BASE MAX. G LASS BULB THE 1 Z 2 I S A HIGH VOLTAGE LOW CURRENT VACUUM R E C T I F I E R TUBE IN A M I N I A T U R E

Contextual Info: HIGH POWER SPT+ TYPE 2-PACK IGBT MODULE X2G100SD12P2 • CIRCUIT DIAGRAM 1200V 100A PACKAGE : M2 ■ FEATURES ■ APPLICATIONS • Soft Punch Through SPT+ Technology • Fast F & soft f inverse i CAL di diodes d • 10us short circuit capability • Positive VCE(on) temperature coefficient