OS 135 DIODE Search Results

Contextual Info: ICS1494 Integrated Circuit Systems, Inc. Enhanced Video Dot Clock Generator Features Features • Low cost - eliminates need for multiple crystal clock os­ • 135 MHz Guaranteed Performance • Fast acquisition of selected frequencies cillators in video display subsystems

ics1494m

Contextual Info: ICS1494 Integrated Circuit Systems, Inc. Enhanced Video Dot Clock Generator Features Features • Low cost - eliminates need for multiple crystal clock os­ • cillators in video display subsystems 135 MHz Guaranteed Performance • Fast acquisition of selected frequencies

back Tunnel diode

Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Contextual Info: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth

Sylvania OSRAM

Abstract: sideled OSRAM sylvania CM01B UV LED 320 nm osram sylvania coin 70055 high flux led osram OS-CM01C
Contextual Info: Product Information Bulletin COINlight SIDELED LED Modules • Long life: Up to 100,000 hours • OSRAM Hyper SIDELED allows high luminous flux • ± 60° viewing angle per LED • Entire Module consists of 8 or 12 LEDs • Low profile allows installation where space is limited

A315A

Abstract: A315B A315 A315F A315G
Contextual Info: HARRIS SEMICON» SECTOR bflE D 33 HB H3Ü2271 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Features • 0050333 0=10 H H A S Package AL-4 Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

Contextual Info: C4D10120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

c4d15120

Abstract: CSD04060 C4D15120A
Contextual Info: C4D15120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 15 A Qc = 96 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching

c4d02120

Abstract: C4D02120A
Contextual Info: C4D02120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 2 A Qc =15 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching

Contextual Info: PM4575J Silicon N-Channel Power MOS FET Module HITACHI Application H igh Speed Power Switching Features • • • • • • • • Equipped with Power M OS FET Low on-resistance High speed switching Low drive current W ide area o f safe operation Inherent parallel diode betw een source and drain

BE32A

Contextual Info: S E M I C O N D U C T O R A ugust 1998 Revised A ugust 1998 TM FC940L Low Voltage 1 to 18 Clock Distribution Device with Selectable PECL or LVTTL Input General Description Features T h e FC 940L is a 1 to 18 low voltage clock fa n o ut buffer. The device allows fo r the selection of e ithe r differential

OS 470 88, VARISTOR

Abstract: OS 470 68, VARISTOR varistor sl 22 OS 470 VARISTOR L 9101 ic 7490 Ic 7490 circuit 7490 ic of IC 7490 M5L241
Contextual Info: EDAL INDUSTRIES INC b4E D 3G^S71b ÜG0D347 TT3 H E D L EDAL Metal Oxide Varistors MOV Transient Voltage Suppressors rrri-açSii.; Description/Features Selection Procedure Metal Oxide Varistors and Transient Voltage Suppressors having a non-linear currentvoltage characteristic which sustains an almost

TPD4112K

Abstract: TPD41112K VVS100
Contextual Info: TPD4112K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4112K The TPD4112K is a DC brushless motor driver using high-voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains a bootstrap circuit, PWM circuit, 3-phase

TPD4111K

Abstract: VVS100 IC package code H,V igbt ihb
Contextual Info: TPD4111K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4111K The TPD4111K is a DC brushless motor driver using high-voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains a bootstrap circuit, PWM circuit, 3-phase

M3184

Abstract: 2040ct PBYR2040CT M3186 os 135 diode 2045CT PBYR2035CT PBYR2045CT m3185
Contextual Info: PBYR2035CT PBYR2040CT PBYR2045CT fi AMER P H I L I PS/DISCRETE E5E D bb53*i31 OQHSTb? 2 OS SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. T hey are intended for use in

MMD7001

Abstract: DP 704 C
Contextual Info: MMD7001 silicon MICROMINIATURE SILICON EPITAXIAL DUAL SWITCHING DIODE SILICON EPITAXIAL DUAL SWITCHING DIODE . . . designed fo r general purpose, high-speed switching applications. • High Breakdown Voltage — • Fast Reverse Recovery Tim e t rr = 3.2 ns (T y p ) @ I p = I r = 10 m Adc

ERZC14DK911

Abstract: 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K
Contextual Info: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and

Contextual Info: A ugust 1998 Revised Ja nuary 1999 SEMICONDUCTOR!!^ FC940L Low Voltage 1 to 18 Clock Distribution Device with Selectable PECL or LVTTL Input General Description Features T h e FC 940L is a 1 to 18 low voltage clock fanout buffer. The device allows for the selection of e ither differential

BSW 17

Contextual Info: TPD4101K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4101K The TPD4101K is a DC brush less motor driver using high voltage PWM control. It is fabricated by high voltage SOI process. The device contains a PWM circuit, 3-phase decode logic, level

Contextual Info: TPD4102K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4102K The TPD4102K is a DC brush less motor driver using high voltage PWM control. It is fabricated by high voltage SOI process. The device contains a PWM circuit, 3-phase decode logic, level

Contextual Info: TPD4101K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4101K The TPD4101K is a DC brush less motor driver using high voltage PWM control. It is fabricated by high voltage SOI process. The device contains a PWM circuit, 3-phase decode logic, level

TPD4102K

Abstract: MARKING BB1 VVS100 heat sink design guide, IGBT
Contextual Info: TPD4102K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4102K The TPD4102K is a DC brush less motor driver using high voltage PWM control. It is fabricated by high voltage SOI process. It contains PWM circuit, 3-phase decode logic, level shift

Contextual Info: TPD4102K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4102K The TPD4102K is a DC brush less motor driver using high voltage PWM control. It is fabricated by high voltage SOI process. The device contains a PWM circuit, 3-phase decode logic, level

F 0094U

Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Light Emitting Diode (950 nm, 12 mil) F 0094U F 0094V Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse