ORIGIN DIODE SP Search Results

BAR66

Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
Contextual Info: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode

Contextual Info: EVALUATION LABORATORY Rating Report - Issue 2 Date - 23 July, 2004 Origin - PAR 985 Total Pages - 13 Fast Recovery Diode Types M2408N#020 to M2408N#060 Old Type No.: SM02-06CXC504 Author EL Check/Approval QA Approval S & M Approval N. A. Tarling Abstract The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice manufacturing

HIGH VOLTAGE DIODE kv

Abstract: MZ-10HV MZ-10HTE1 MZ-13HTE1 MZ-4HV
Contextual Info: I5J S IL IC O N H IG H V O L T A G E Œ 7 x -Η ORIGIN • M Z -r ELECTRIC CO LTD SflE » . • /£*& Ta = 2 5 r , m * fi -s m a VP T ype I E # * b ö l3 Q 7 4 □ □ 00072 b^D I0RIJ FEATURES 1. High voltage zener diode (up to 10 kV . 2. Low differential resistance o f avalanche breakdow n area.

Socket Modules

Abstract: Section 3 MOV SUPPRESSOR RC SUPPRESSOR varistor relay wiring diagram A2 diode 70-ASMM-120 Relay coil ind cont eq METAL OXIDE VARISTOR
Contextual Info: SECTION 3 Advantages of the 70-SM Module System Magnecraft plug in modules are available in many variations allowing coverage for most applications on the market. The Metal Oxide Varistor MOV circuit protects by shunting potentially damaging electrical spikes away from the relay coil. The

ISO 8015 tolerance

Abstract: omron g8HN-1C4T omron g8HN-1C4T-rH g8hn-1a4t-rj g8HN-1a4T omron g8HN-1A4T-RJ g8HN-1C4T-rH g8HN-1C4T g8hn 1c4t G8HN-1A2T-Rh
Contextual Info: G8HN Automotive Micro ISO relay General, multi-purpose relay • 12VDC, 24VDC coil • High-wattage • Surge suppression, diode type available • Fully sealed type Protective structure • Bracket and rubber suspension type available • High wattage type meets mini ISO wattage specification

zt3243leea

Abstract: zt3243 ZT3243LEEY zt3243l ZT3243E ZT3243F zt3243eea ZT3241LEEA Zywyn ZT3243LE
Contextual Info: ZT3243E Low Power +3V to +5.5V, 3D/5R 250kbps RS232 Transceivers Zywyn Corporation ZT3241E/ZT3243E Zywyn ZT3241E/ZT3243E Low Power +3V to +5.5V, 3D/5R 250kbps RS232 Transceivers Features General Description • Meets or Exceeds the EIA/TIA-232F and CCITT V.28/V.24 Specifications for VCC at +3.3V ±10%

Photo IC

Abstract: hamamatsu photoreflector data
Contextual Info: Photo IC 1 Illuminance sensors 1-1 Photo IC diodes 1-2 Light-to-frequency converter photo IC 2 Transmitter/receiver photo IC for optical link 2-1 General-purpose type 2-2 For MOST networks 150 Mbps CHAPTER 04 7 Applications 7-1 Simple illuminometers 7-2 High-speed digital transmission

Contextual Info: STPS6045HR Aerospace 2 x 30 A - 45 V Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in a hermetically sealed surface mount package, it is

Contextual Info: Cam Positioner H8PS CSM_H8PS_DS_E_5_1 This Compact Cam Positioner, Popular for Its Ease-of-use, Now Comes with Even Better Functions. • Compact 8-, 16-, and 32-output Models available that are 1/4DIN size at 96 x 96 mm. • High-speed operation at 1,600 r/min and high-precision settings

Contextual Info: 1N6642U Aerospace 0.3 A - 100 V switching diode Datasheet - production data Description This power ultrafast recovery rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2D

Contextual Info: Supertex inc. HV5408B 32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features General Description Processed with HVCMOS technology Low power level shifting SOURCE/SINK current minimum 20mA Shift register speed 8.0MHz Latched data outputs

Contextual Info: Supertex inc. HV5308B 32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features General Description Processed with HVCMOS technology Low power level shifting Source/sink current minimum 20mA Shift register speed 8.0MHz Latched data outputs

1N5822U

Contextual Info: 1N5822U Aerospace 40 V power Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B

Contextual Info: 1N5819U Aerospace 45 V power Schottky rectifier Datasheet - production data Description K A This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B

Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

fast recovery diode 54

Abstract: BYC10-600CT BYC5-600 BYV29
Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

BYC8600

Abstract: byc8 600
Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC8-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET QUICK REFERENCE DATA

Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC5B-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10B-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

ultraFast Recovery Bridge Rectifier

Abstract: BYC10-600 BYC10B-600 BYV79E
Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10B-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC8B-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

ADN2841

Abstract: ADN2843 ADN2844 ADN2845 STM-64 ITU-T-G958 10667G DIODE FS 601
Contextual Info: PRELIMINARY TECHNICAL DATA a 10.709Gb/s High Speed Data Switch Preliminary Technical Data ADN2845 FEATURES Data Rates from 50Mb/s to 10.709Gb/s Typical rise/fall time 30 ps Bias Current range 3mA to 80 mA Modulation Current range 5mA to 80 mA Automatic laser shutdown, ALS

Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC5-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET QUICK REFERENCE DATA