CU80 Search Results

MSG100L41

Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41

CU8005-0000

Abstract: CU8805
Contextual Info: CU8005-0000 4 port USB 2.0 hub Version: 1.1 Date: 2007-06-11 Table of Contents Table of Contents 1 Foreword 1 1.1 Notes on the documentation 1 1.1.1 1.1.2 1.1.3 1 1 1 1.2 2 3 2 1.2.1 1.2.2 2 2 State at Delivery Description of safety symbols 3 2.1 2.2 2.3 3

CU8004-0000

Abstract: CU8805 usbhub CU8805-0000 belegung klemme
Contextual Info: CU8005-0000 4-Port USB 2.0 Hub Version: 1.1 Datum: 11.06.2007 Inhaltsverzeichnis Inhaltsverzeichnis 1 Vorwort 1.1 1.2 2 3 1 1.1.1 1.1.2 1.1.3 1 1 1 Haftungsbedingungen Lieferbedingungen Copyright Sicherheitshinweise 2 1.2.1 1.2.2 2 2 Auslieferungszustand Erklärung der Sicherheitssymbole

Contextual Info: SPECIFICATION FOR APPROVAL REF. : CU8043□□□□L□-□□□ ABC'S DWG NO. PROD. Shielded SMD Power Inductor NAME REV. PAGE 20130417-B 1 Ⅰ﹒Configuration and dimensions： A B 100 C F L E H L D G J PCB Pattern Unit：m/m A B C D E 8.00±0.3 8.20±0.3

Contextual Info: SPECIFICATION FOR APPROVAL REF. : CU8030□□□□L□-□□□ ABC'S DWG NO. PROD. Shielded SMD Power Inductor NAME REV. 20130902-B PAGE 1 Ⅰ﹒Configuration and dimensions： A B 100 C F L E H L D G J PCB Pattern Unit：m/m A B C D E F G H 8.00±0.3

ic ns 4263

Contextual Info: GM71C4263C GM71CS4263CL LG S e m ic o r t C o .,L td . 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM # Description Features The GM71C S 4263C/CL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C (S)4263 C/CL has realized higher density, higher performance and various

THREE PHASE ISOLATION TRANSFORMER CONSTRUCTION DETAIL

Abstract: step down transformer induction heating manual CU16J6 CU16J6S3
Contextual Info: = s ^ TR0LUNIT— CU16J6S3 CU300Q6S3 FOR THREE PHASE AC CONTROL CU300Q6S3 series are conbined a thyristor stack and a gate unit GU-6B and when the three phase power supply and the load are connected to this control unit, the three phase AC control circuit are easily combined.

CUSB-B-F1-RA-BF90-WT-TH

Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B C C SPECIFICATIONS Housing: Contact: Contact Plating: Shell: Shell Plating: Contact Resistance: Insulation Resistance: Withstanding: Operating Temp: Furnace Temp: D E F D LCP Glass Fiber UL94V-0 Brass T=0.25mm Au1u”+Sn80~100u”+Ni60u”

FOR5J

Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
Contextual Info: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3

MB88F332

Abstract: 180NM cmos process parameters apix ashell LSI FUJITSU INAP125 lcd ttl tcon ARGB8888 TFT LCD n96 EGS02 TFT LCD panel 1.8"
Contextual Info: MB88F332 LSI Product Specifications 3th December, 2008 Edition 0.981 FUJITSU PROPRIETARY AND CONFIDENTIAL MB88F332 LSI Product Specifications Preface Objectives and Intended Reader Thank you very much for your continued special support for Fujitsu semiconductor products.

IXYS DSA 9-16F

Contextual Info: DS 9 DSA 9 Rectifier Diodes Avalanche Diodes VRSM V 900 1300 1700 1900 V BR min ① VRRM V V 1300 1750 1950 800 1200 1600 1800 VRRM = 800 - 1800 V IF(RMS) = 18 A IF(AV)M = 11 A Standard Avalanche Types Types DS 9-08F DS 9-12F A C DO-203 AA C DSA 9-12F DSA 9-16F

NT101

Abstract: CM800HA-24H NT-101
Contextual Info: CM800HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S in Q lG IGBTMOD H-Series Module 800 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

Contextual Info: 9097250 TOSHIBA <DISCRETE/OPTO J 39C 02 3 6 5 35- g 3 THYRISTROR CONTROL UNIT 3-PHASE BRIDGE CONTROL UNIT) TOSHIBA {DISCRETE/OPT0> C U 300L6A 3, 3T C U 300U 6A 3 2. The g ate can be blocked so th a t th e c u rre n t lim iter c ir ­ T he CU300L6A3/CU300U6A3 s e r ie s is a combination of a

220v dc motor thyristor control

Abstract: CU16L6A3 Thyristor 220V
Contextual Info: CU16L6A3 CU300U6A3— S S Sr ^ r " 1-“" FOR THREE PHASE COMMUTATION CONTROL CU300U6A3 serires are combined a thyristor stack and a gate unit GU-6B and when the three phase power supply and the load are connected to this control unit, phase commutation control

IXYS DSA 1-16D

Abstract: DIODE DSA 1-16D DO-205ACDO-30 pwm INVERTER welder diode avalanche DSA VRRM 2300 1718a 110-12F IXYS DSA DSI 35-08A 117 L DS35Q
Contextual Info: Discrete Rectifier and Avalanche Diodes Contents 1 2 3 Type Page 1800 1600 1400 A VRRM/VDRM V 800 IF(AV)M 1200 Package style 1 2.3 ● ● DS 1 ● ● DSA 1 D5 - 2 2 3.6 ● ● ● DS 2 ● ● DSA 2 D5 - 3 3 2x11 4 ● ● ● ● 5 ● ● ● DS 9 ● ● DSA 9

GM71C4400

Abstract: CLZ80 GM71C4400C V888 OF100
Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71C4400C/CL is the new generation dynam ic R A M o rg an ized 1,048,576 x 4 b it. GM71C4400C/CL has realized higher density, higher perform ance and various functions by utilizing a d v a n c e d CM OS p ro c e s s te c h n o lo g y . T he

9-16F

Abstract: do-203 IXYS DSA 9-12F DIODE DSA 18 IXYS DSA 9-16F
Contextual Info: DSA 9 Avalanche Diode VRRM V V V 1300 1700 1900 1300 1750 1950 1200 1600 1800 Type A C DO-203 AA C DSA 9-12F DSA 9-16F DSA 9-18F A A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 150°C; 180° sine 18 11 A A PRSM TVJM, tp = 10 ms 4.5 kW

180NM cmos process parameters

Abstract: MB88F332 APIX2 gi 9448 1280x480 apix ashell PTMR05 TFT LCD n96 EGS02 rgb888 to rgb666
Contextual Info: MB88F332 LSI Product Specifications MB88F332 LSI Product Specifications 12th August, 2009 Edition 1.1 FUJITSU MICROELECTRONICS PROPRIETARY AND CONFIDENTIAL i MB88F332 LSI Product Specifications Preface Objectives and Intended Reader Thank you very much for your continued special support for Fujitsu semiconductor products.

60227 IEC

Abstract: QO170 photovoltaic cell ana 650 STRV00121 DE312 C60H Circuit Breakers Catalogue PJL36120 0611CT1001 QO816L100 QOB3150VH
Contextual Info: DE3_p01.fm Page 1 Saturday, January 10, 2015 2:04 AM Circuit Breakers Selection Guide QO and QOU Miniature Circuit Breakers H-Frame J-Frame L-Frame M-Frame P-Frame R-Frame DE3-10 QO™ Miniature Circuit Breakers DE3-10 QO™ Circuit Breaker Accessories

Contextual Info: DSA 9 VRRM = 1200-1800 V IF RMS = 18 A IFAVM = 11 A Avalanche Diode VRSM V(BR)min VRRM V V V 1300 1700 1900 1300 1750 1950 1200 1600 1800 Type A C DO-203 AA C DSA 9-12F DSA 9-16F DSA 9-18F A A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM TVJ = TVJM

C306

Contextual Info: PROOUCÎ NUU8£R S E E TABLE DIM A ± 010 [ 25] • 2 X 20 STYLE SHOWN % R .0 4 8 [1 2 2 ] - ¥ •DIM C ± 0 1 0 [2 5 ]- <g 0 1 0 /.2 5 .0 1 6 /.4 1 ♦ * .20 [5 .1 ] <§> ® ® X Y AT BASE X Y AT TIPS ® ® ® ® ® ® ® .015 [0 .3 8 ] NOTE 4 * * •010/.25 X Z AT BASE

Contextual Info: Content BOWEI INTEGRATED CIRCUITS CO.,LTD. l LC Filter Outline Drawings -l Miniature LC Bandpass Filter -l Miniature LC Lowpass Filter -l

k117

Abstract: CT5001 T160-C4 VT30-90 Lorch DIODE S3l Equalizer 4000MHz L16 8pin varactor VT400
Contextual Info: BOWEI Content BOWEI INTEGRATED CIRCUITS CO.,LTD. LC Filter Outline Drawings- 2 Miniature LC Bandpass Filter- 9 Miniature LC Lowpass Filter - 15

Cu80

Abstract: diode 4148 specification diode 4148 in 4148 78min UBR100
Contextual Info: Technical specification Page 1 Pages 2 Chip for silicon switching diode Type: 1N 4148 chip size 0,28 х 0,28 mm Diameter of wafer Sizes of chip F/2 100 mm 0,28 х 0,28 mm А B 170 ± 10 µm C 50 ± 5 µm D 140 ± 20 µm Metallization of planar side V - Ag