OPTOELECTRONICS DEVICE DATA Search Results
OPTOELECTRONICS DEVICE DATA Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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NFMJMPC226R0G3D | Murata Manufacturing Co Ltd | Data Line Filter, | |||
BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN | |||
BLM21HE601SN1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm NONAUTO | |||
BLM21HE472BH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 4700ohm POWRTRN |
OPTOELECTRONICS DEVICE DATA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IAV202Contextual Info: Product Specification IAV202 GPD Optoelectronics Corp. 7 Manor Parkway Salem, NH 03079 Tel: +1 603 894 6865 Fax: +1 603 894 6866 www.gpd-ir.com sales@gpd-ir.com GPD OPTOELECTRONICS CORP PRODUCT SPECIFICATIONS SHEET CUSTOMER: CITY: CUST. DWG. DEVICE MARKING |
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IAV202 15and IAV202 | |
IAV204
Abstract: T046
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IAV204 T0-46 15and IAV204 T046 | |
IAV350
Abstract: IAV352 apd photodiode
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IAV352 IAV350 15and IAV350 IAV352 apd photodiode | |
IAV204
Abstract: IAV205
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IAV205 T0-46 IAV204 15and IAV204 IAV205 | |
IAV203Contextual Info: Product Specification IAV203 GPD Optoelectronics Corp. 7 Manor Parkway Salem, NH 03079 Tel: +1 603 894 6865 Fax: +1 603 894 6866 www.gpd-ir.com sales@gpd-ir.com GPD OPTOELECTRONICS CORP PRODUCT SPECIFICATIONS SHEET CUSTOMER: CITY: CUST. DWG. DEVICE MARKING |
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IAV203 T0-46 15and IAV203 | |
MOTOROLA 813 transistor
Abstract: h11d1 motorola transistor 813 motorola QT Optoelectronics H11D1 H11D2
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H11D1/D H11D1 H11D2 H11D1 H11D2 H11D1/D* MOTOROLA 813 transistor h11d1 motorola transistor 813 motorola QT Optoelectronics | |
Sharp Semiconductor Lasers
Abstract: AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics
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MIL-STD-883 SMA04033 Sharp Semiconductor Lasers AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics | |
MOTOROLA 813 transistor
Abstract: h11d1 motorola PD3007
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H11D1/D H11D2 H11D1 H11D2 MOTOROLA 813 transistor h11d1 motorola PD3007 | |
esaki DiodeContextual Info: E li OPTOELECTRONICS IMPROPER TESTING METHODS FOR LED DEVICES AN603 In any manufacturing operation it is essential that the materials used in the fabrication process meet the minimum quality specifications of the device under production. To that end, prudent manufacturers establish |
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AN603 esaki Diode | |
opt 300
Abstract: Optocouplers QTC qtc cny17-1 OPTOCOUPLER MARKING CODE OPT300 qtc optocoupler ST1603 9416R1 0884 qtc creepage
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0110B VAC/600 MCT2200 CNY17-1 9416R1 opt 300 Optocouplers QTC qtc cny17-1 OPTOCOUPLER MARKING CODE OPT300 qtc optocoupler ST1603 0884 qtc creepage | |
APP4638Contextual Info: Maxim > App Notes > Optoelectronics Keywords: DS1874 Mar 05, 2010 APPLICATION NOTE 4638 DS1874 quick reference guide Abstract: This reference guide provides an alternate view of the register map for the DS1874 SFP+ controller with digital LDD interface. The register information is convenient when programming the device. |
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DS1874 DS1874 com/an4638 AN4638, APP4638, APP4638 | |
Contextual Info: «OI T0X9105 Large Area Silicon Quadrant Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9105 is a high-speed quadrantgeom etry, h ig h -re s is tiv ity P-type s ilic o n photodiode. This device is designed specifically for applications in low cost laser alignment, |
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T0X9105 06//m G00D524 IH375) | |
darlington opto coupler
Abstract: opto 4N33 FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD865 FCD865D
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FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860C131 FCD860D131 FCD865 FCD865C13' darlington opto coupler opto 4N33 FCD865D | |
4N2S
Abstract: opto coupler 4n35 Opto Coupler 4N36 4n26 opto 4N28 opto OPTO-37 4N26 FCD830D FCD831C FCD836
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FCD830D FCD8312' FCD831A12' FCD831B2' FCD831CÂ FCD831D12' FCD836 FCD836C12' FCD836DÂ 4N25141 4N2S opto coupler 4n35 Opto Coupler 4N36 4n26 opto 4N28 opto OPTO-37 4N26 FCD831C | |
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MF-49
Abstract: bb4t MF-49DF-T11-002
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MF-49DF-T11-002/R13-002 PRBS27-1, MF-49DF- MF-49DF-T11-002 MF-49DF-R13-002 MF-49 bb4t MF-49DF-T11-002 | |
logic ic databook
Abstract: Motorola Optoelectronics DL118 TOSHIBA IGBT DATA BOOK motorola bipolar transistor databook DL156 thermal printer 8051 microcontroller 8048 microcontroller APPLICATION national linear application notes book DL118/d toshiba Silicon Rectifier Diodes
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MTIL117
Abstract: Optoelectronics Device data motorola optoelectronics
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MTlLl17/D MT1LI17 MTIL117 MTlLl17 602-2W609 MTIL117~ Optoelectronics Device data motorola optoelectronics | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & *1 f t UL VDE C SA SETI ® ® ® 8EMKO DEMKO NEMKO BABT GlobalOptoisolatorTV 6-Pin DIP Optoisolators Transistor Output MCT2 MCT2E [CTR •20% Min] The M CT and M CT2E devices consist of a gallium arsenide Infrared emitting |
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MOC2A40-5
Abstract: MOC2A40-10 601 Opto isolator 7255 AN1048 ACS01 motorola triac driver triac 101 amps IEEE472 RS-443
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UL50811117 0CH1047 MOC2A40-5 MOC2A40-10 601 Opto isolator 7255 AN1048 ACS01 motorola triac driver triac 101 amps IEEE472 RS-443 | |
7500 IC 14 PIN
Abstract: MTIL117
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MTIL117/D MTIL117 MTIL117 7500 IC 14 PIN | |
til117 motorolaContextual Info: MOTOROLA Order this document by MTIL117/D SEMICONDUCTOR TECHNICAL DATA UL CSA SETI BABT M TIL117 6-Pin DIP Optoisolator Transistor Output STYLE 1 PLASTIC The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. |
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MTIL117/D TIL117 MTIL117 MTIL117 til117 motorola | |
Optoelectronics c3Contextual Info: MOTOROLA Order this document by M4N37/D SEMICONDUCTOR TECHNICAL DATA TO UL f t CSA SETI M4N37 BABT 6-Pin DIP Optoisolators Transistor Output STYLE 1 PLASTIC The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. |
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M4N37/D M4N37 M4N37 Optoelectronics c3 | |
M4N35Contextual Info: MOTOROLA Order this document by M4N35/D SEMICONDUCTOR TECHNICAL DATA TO UL CSA SETI BABT 6-Pin DIP Optoisolators Transistor Output The M 4N 35 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. |
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M4N35/D M4N35 M4N35 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA *1 VDE UL CSA ® ® ® ® SETI SEMKO DEMKO NEMKO BABT G l o b a lO p to is o la to r ^ 6-Pin DIP Optoisolators Darlington Output No Base Connection MOC8030 MOC8050 [CTR s 300% Min] [CTR s 500% Min] Motorola Preferred Devices |
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MOC8030 MOC8050 MOC8050 |