OPTO MOS APPLICATION Search Results

Contextual Info: Ti TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA CDISCRETE/OPTO> ¿Toóhibt d FJ'IG'í TESG 99D 16677 0Dlhb77 DT-3S-3S TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 SK 4 2 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA tf-MOS INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO tfoÀfubn de T | tí Tomaso oGibTbo s 99D 16760 D'PS^-IS SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA 2 S K 7 9 1 SILICON N C H A NNEL MOS TYPE (ff-MOS) INDUSTRIAL APPLICATIONS Unit in m m

Contextual Info: TT TOSHIBA -CDISCRETE/OPTO} De J t D^SSD 99D 16737 9097250 TOSHIBA <DISCRETE/OPTO G01b737 7 D r - 5J - 1S $)ìhì h < TOSHIBA SEMICONDUCTOR FIELD EFFECT TRANSISTOR 2 S K 6 7 h TECHNICAL DATA SILICON N C H ANNEL MOS TYPE 7T-MOS I ) TENTATIVE INDUSTRIAL APPLICATIONS

Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 T O SHIBA <DISCRETE/OPTO DE I TDT7HSD DGlbbS3 1 99D 16653 r - SEMICONDUCTOR D 3 ? . ^ / TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 5 7 SILICON N CHANNEL MOS TYPE TT-MOS) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} T í 9097250 TOS HI B A DISCRETE/OPTO SEMICONDUCTOR DE|lDT7a5D 99D 16723 D0lti7E3 DT-S^HS TOSHIBA FIELD EFFECT TRANSISTOR 2 S I 5 7 3 SILICON N CHANNEL MOS TYPE T E N T A T IV E TECHNICAL DATA (zr-Mos > INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T T E S D OOlbßMG O f * D 'T S R - il 99D 16840 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 3 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOS I) INDUSTRIAL APPLICATIONS Unit in mra

Contextual Info: TOSHIBA {DISCR ETE /OPTO} 9097250 TOSHIBA ¿/aììùUii T i D e I td^SSD 001^723 7 DISCRETE/OPTO TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S I 5 7 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (zr-Mos > TENTATIVE INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} D e | ‘ì D c17E5D QülbûlO 5 99D 16810 9097250 TOSHIBA <DISCRETE/OPTO ¿fasìubt SEMICONDUCTOR TOSHIBA DT-S^-lS FIELD EFFECT TRANSISTOR Y T F 2 5 3 SILICON N C H A NNEL MOS TYPE TECHNICAL DATA 71 -MOS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} "H 9097250 TOSHIBA DISCRETE/OPTO » F | ciDci7ESG QGlbbbfl 3 | ~ 99D 16668 D 7 SEMICONDUCTOR 3 ?~/3 TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 3 8 8 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: TOSHIBA -CDISCRETE/OPTO> TD 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA SEMICONDUCTOR » F | ciDci 7 S S D 90D : 16371 D O lt.371 D TOSHIBA GTR MODULE MG8D6EM1 TECHNICAL DATA 'SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA <DISCRETE/OPTO> »FI t DTTESO DDlbbBa 99D 16632 SEMICONDUCTOR D T~~ 31-13 TOSHIBA FIELD EFFECT TRANSISTOR 2 S J 1 1 5 SILICON P CHANNEL MOS TYPE TECHNICAL DATA Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION.

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } ‘n DE 1 ^ 7 5 5 1 ] 99D 16659 9097250 TOSHIBA <DISCRETE/OPTO ¿/oih'ilu DDltbSi a f i - n - s TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2SK38 5 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS

L713

Contextual Info: TOSHIBA {DISCRETE/OPTO} Ti 99D 16713 9097250 TOSHIBA CDISCRETE/OPTO ^osfiilx D E ^ T D T V B S O DD1 L713 14 D r - s î ' TOSHIBA FIELD EFFECT TRANSISTOR’ SEMICONDUCTOR I3 2SK 538 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S) INDUSTRIAL APPLICATIONS

transistor 16933

Abstract: 16933 Transistor
Contextual Info: TOSHIBA {DISCRETE/OPTO} dF I tG ^ S O 99D 16932 9097250 TOSHIBA DISCRETE/OPTO Gült^E S ï~~ DT-?,9-l3 TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA SEMICONDUCTOR S 2 3 7 0 SILICON N CHANNEL MOS TYPE (7T-M0SI ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in aim

YTF540

Abstract: 16845 ip27a 316a2 In15A
Contextual Info: TOSHIBA {DISCRETE/OPTO} D e | TOTVSSD 9097250 TOSHIBA ÍDISCRETE/OPTO 99 D 16844 T - 2 ? -/3 □Dlbfl44 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA CT-MOSI) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

2501 OPTO

Abstract: toshiba hay 3AZA Toshiba hay 37 F251
Contextual Info: 1 TOSHIBA -CDISCRETE/OPTO} »Ena^SSO 99D 16806 9097250 TOSHIBA <OISCRETE/OPTO ¿Toshiba SEMICONDUCTOR OGlbflOb □ D "T -3 q - | 3 TOSHIBA FIELD EFFECT TRANSISTOR Y T F 2 5 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0S I) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

TOSHIBA 1N DIODE

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS

AYN TI W

Abstract: iGSS 100nA Vgs 0v
Contextual Info: TOSHIBA -CDÏSCRETE/OPTO}- T ì D E 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR I TCHVESD 99D 16735 D TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 7 3 TECHNICAL DATA SILICON N CHANNEL MOS TYPE ff-MOSI) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: ,TOSHIBA {DISCRETE/OPTO}9097250 TOSHIBA DISCRETE/OPTO TO SH IBA SEMICONDUCTOR TO DE I TDTTSSD GDlt.411 □ Ï 90D 16411 DT-3^S?7 TOSHIBA GTR MODULE MG 3 O G 2 DM 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} •n 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR Ce | TGTTaSD □□ 11,7 3^ □ |~~ 99D 16739 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 7 8 TECHNICAL DATA SILICON N CHANNEL MOS TYPE (7T-M0S I ) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} "ri 9097250 TOSHIBA DISCRETE/OPTO ^oiìììlm DE I TDTTSSD DOlbflflS 5 99D 16882 Drr_3 q_ (3 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE Y T F 6 A 3 (ff-HOS H) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

GT25H101

Abstract: 1NSULAT 158KA OOLB
Contextual Info: TOSHIBA {DISCRETE/OPTO} TO SH IBA D * T ' 3 3 ' I 3 . 90D 1 61 87 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T 2 5 H 1 0 1 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. HOTOR CONTROL APPLICATIONS.

S51C

Abstract: T0-204M
Contextual Info: TOSHIBA {DISCRETE/OPTO} T T TI t OTVSSD DDlbhMM O J 99D 9097250 TOSHIBA DISCRETE/OPTO ¿/Mhìht m 16644 07^3^-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 SK 3 2 5 SILICON N CHANNEL MOS TYPE (7T-M0S) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in nun

251C

Abstract: TE100
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DISCRETE/OPTO it Ì>ÌF| =1[ H 7 2 S 0 ^ 99D 16650 DDlbbSO D T-2>S- \3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 56 SILICON N CHANNEL MOS TYPE 7T-M 0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in m m