OPTO MOS APPLICATION Search Results

Contextual Info: Ti TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA CDISCRETE/OPTO> ¿Toóhibt d FJ'IG'í TESG 99D 16677 0Dlhb77 DT-3S-3S TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 SK 4 2 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA tf-MOS INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO tfoÀfubn de T | tí Tomaso oGibTbo s 99D 16760 D'PS^-IS SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA 2 S K 7 9 1 SILICON N C H A NNEL MOS TYPE (ff-MOS) INDUSTRIAL APPLICATIONS Unit in m m

Contextual Info: TT TOSHIBA -CDISCRETE/OPTO} De J t D^SSD 99D 16737 9097250 TOSHIBA <DISCRETE/OPTO G01b737 7 D r - 5J - 1S $)ìhì h < TOSHIBA SEMICONDUCTOR FIELD EFFECT TRANSISTOR 2 S K 6 7 h TECHNICAL DATA SILICON N C H ANNEL MOS TYPE 7T-MOS I ) TENTATIVE INDUSTRIAL APPLICATIONS

Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 T O SHIBA <DISCRETE/OPTO DE I TDT7HSD DGlbbS3 1 99D 16653 r - SEMICONDUCTOR D 3 ? . ^ / TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 5 7 SILICON N CHANNEL MOS TYPE TT-MOS) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T T E S D OOlbßMG O f * D 'T S R - il 99D 16840 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 3 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOS I) INDUSTRIAL APPLICATIONS Unit in mra

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} D e | ‘ì D c17E5D QülbûlO 5 99D 16810 9097250 TOSHIBA <DISCRETE/OPTO ¿fasìubt SEMICONDUCTOR TOSHIBA DT-S^-lS FIELD EFFECT TRANSISTOR Y T F 2 5 3 SILICON N C H A NNEL MOS TYPE TECHNICAL DATA 71 -MOS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA <DISCRETE/OPTO> »FI t DTTESO DDlbbBa 99D 16632 SEMICONDUCTOR D T~~ 31-13 TOSHIBA FIELD EFFECT TRANSISTOR 2 S J 1 1 5 SILICON P CHANNEL MOS TYPE TECHNICAL DATA Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION.

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } ‘n DE 1 ^ 7 5 5 1 ] 99D 16659 9097250 TOSHIBA <DISCRETE/OPTO ¿/oih'ilu DDltbSi a f i - n - s TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2SK38 5 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS

L713

Contextual Info: TOSHIBA {DISCRETE/OPTO} Ti 99D 16713 9097250 TOSHIBA CDISCRETE/OPTO ^osfiilx D E ^ T D T V B S O DD1 L713 14 D r - s î ' TOSHIBA FIELD EFFECT TRANSISTOR’ SEMICONDUCTOR I3 2SK 538 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S) INDUSTRIAL APPLICATIONS

Contextual Info: TOSHIBA {DISCRETE/OPTO} "H 990 16854 9097250 TOSHIBA <DISCRETE/OPTO> ^ashiht SEMICONDUCTOR D E I •=!DT 72 SD OGlbflS4 D f D T ^ S - cR TOSHIBA FIELD EFFECT TRANSISTOR Y T F 6 l'l SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SE INDUSTRIAL APPLICATIONS

YTF540

Abstract: 16845 ip27a 316a2 In15A
Contextual Info: TOSHIBA {DISCRETE/OPTO} D e | TOTVSSD 9097250 TOSHIBA ÍDISCRETE/OPTO 99 D 16844 T - 2 ? -/3 □Dlbfl44 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA CT-MOSI) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

TOSHIBA 1N DIODE

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS

Contextual Info: TOSHIBA {DISCRETE/OPTO} •n 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR Ce | TGTTaSD □□ 11,7 3^ □ |~~ 99D 16739 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 7 8 TECHNICAL DATA SILICON N CHANNEL MOS TYPE (7T-M0S I ) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} "ri 9097250 TOSHIBA DISCRETE/OPTO ^oiìììlm DE I TDTTSSD DOlbflflS 5 99D 16882 Drr_3 q_ (3 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE Y T F 6 A 3 (ff-HOS H) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

251C

Abstract: TE100
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DISCRETE/OPTO it Ì>ÌF| =1[ H 7 2 S 0 ^ 99D 16650 DDlbbSO D T-2>S- \3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 56 SILICON N CHANNEL MOS TYPE 7T-M 0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in m m

Contextual Info: TOSHIBA {DISCRETE/OPTO} Tí D eT I t D ^ S G 990 16850 9097250 TOSHIBA DISCRETE/OPTO ^/oihlha üDlbñSG 3 D 1-39-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSIT) INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} dF I t GTTSSD ODlbVGl 99D 16701 9097250 TOSHIBA DISCRETE/OPTO T - — ¿foÀiuh D 3 1 - 0 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 2 S K 5 3 0 i7l-M O S ) INDUSTRIAL APPLICATIONS Unit in nun

Contextual Info: TOSHIBA {DISCRETE/OPTO}- TT 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA dF | t O T 75SG GDlbTSS T TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 99D 1 6 7 5 5 2 S IC 7 9 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SI) T “ 3 <? “ I• •INDUSTRIAL APPLICATIONS

Contextual Info: TOSHIBA -CDISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO f/aììuha TT DE I TOTVSSO QQlbñbt. 99D 16866 D T -3 = M TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 6 2 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( Ti-MOSI) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} T¡ 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR Í F | ‘ÌD'ÌTESD D01t,73S 3 99D 16735 D TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 7 3 TECHNICAL DATA SILICON N CHANNEL MOS TYPE (7T-M0SI ) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA <DISCRETE/OPTO SEMICONDUCTOR DE I TOTTSSD DDlbflhfl D 99D 16868 D "F39-1 TOSHIBA FIELD EFFECT TRANSISTOR Y T F 6 3 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0S I) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

VDS-500V

Contextual Info: Ti TOSHIBA -CDISCRETE/OPTOÏ 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR íFl^G ^T aSD 00lt,743 S | 99D 16743 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 9 4 TECHNICAL' d a t a SILICON N CHANNEL MOS TYPE ff-MOSl) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

2SK324

Abstract: f664
Contextual Info: TOSHIBA {DISCRETE/OPTO} ^ ß F I ^ D i T a S D 9097250 TOSHIBA DISCRETE/OPTO {/asìùhi D D l b b m 99D f6641 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 SK 3 2 4 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in m m

Contextual Info: TT TOSHIBA -[DISCRETE/OPTO} DE I ^ C H V B S D 99D 16674 9097250 TOSHIBA <DISCRETE/OPTO D T ' tfoòhìht SEMICONDUCTOR 301LL.74 i r - 2 .tr TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 4 2 2 SILICON N CHANNEL MOS TYPE 7T-M0S) INDUSTRIAL APPLICATIONS Unit in mm TECHNICAL DATA