OPTIONAL RF POWER AMPLIFIER Search Results

330400

Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD April 2007 - Rev 19-Apr-07 Features Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010

TS3332LD

Abstract: U1001 XP1005-BD XU1001-BD
Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD October 2008 - Rev 16-Oct-08 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Commercial-Level Visual Inspection Using

U1001

Abstract: 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter
Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010

U1000

Abstract: XB1004 XU1000
Contextual Info: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing

CMY82

Abstract: GVQ09253 mmic amplifier marking code lo2 SMD MARKING CODE L6
Contextual Info: GaAs MMIC CMY 82 Preliminary Data Sheet • GaAs receiver front-end for cellular CDMA applications • Adjustable gain control RF amplifier with 20 dB dynamic range • Low LO-power demand of typ. – 10 dBm with 2 LO buffer stages • Optional 1 or 2 LO-buffer stages

Contextual Info: 19-6034; Rev 0; 9/11 MAX2090 50MHz to 1000MHz Analog VGA and Power Detector with Optional AGC Loop General Description Benefits and Features The MAX2090 high-linearity analog variable-gain amplifier VGA is a monolithic SiGe BiCMOS attenuator, amplifier, and RMS detector designed to interface with

Contextual Info: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)

Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using

gps l10

Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

gps l10

Abstract: 24PIN CXG1115AER signal amplifier 800 mhz cdma
Contextual Info: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)

24PIN

Abstract: CXG1115ER
Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

gps l10

Contextual Info: CXG1115AER Dual-band Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using

Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

24PIN

Abstract: CXG1118ER GC118
Contextual Info: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

Die Attach and Bonding Guidelines

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC
Contextual Info: Agilent HMMC-5033 17.7-32 GHz Power Amplifier Data Sheet Features 2.74 x 1.31 mm 108 × 51.6 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5033 is a MMIC power amplifier designed for use in

CLC400

Abstract: CLC401 CLC402 CLC404 CLC405 CLC406 CLC407 CLC730013 CLC730027 CLC730077
Contextual Info: N 8-Pin Op Amp Evaluation Boards Part Numbers CLC730013, CLC730027, CLC730077 February 1999 +VCC The CLC730013, CLC730027, and CLC730077 evaluation boards are designed to aid in the characterization of National Semiconductor’s 8-pin, monolithic amplifiers.

BBA150

Contextual Info: BBA150_bro_en_3606-7247-12_v0200.indd 1 Product Brochure | 02.00 Test & Measurement R&S BBA150 Broadband Amplifier Excellent microwave amplifiers with high power density 04.07.2013 09:06:29 R&S®BBA150 Broadband Amplifier At a glance The R&S®BBA150 is a new family of broadband

M513

Abstract: MAAM12031 MAAM12031SMB MAAM12031TR
Contextual Info: Low Noise Amplifier 1.7 - 2.0 GHz MAAM12031 V4 Features • • • • • • • Functional Schematic Low Noise Figure: 1.65 dB High Gain: 20 dB Low Power Consumption: 3 to 5 V, 8 mA High Dynamic Range DC Decoupled RF Input and Output No External RF Tuning Elements Necessary

Contextual Info: Low Noise Amplifier, 1.7 - 2.0 GHz MAAM12031 V3 Features • • • • • • • Functional Schematic Low Noise Figure: 1.65 dB High Gain: 20 dB Low Power Consumption: 3 to 5 V, 8 mA High Dynamic Range DC Decoupled RF Input and Output No External RF Tuning Elements Necessary

WR284* ISOLATOR

Abstract: MS3116E-10-6S WR340 flange dimensions
Contextual Info: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS

Contextual Info: RFAM2790 45MHz to 1003MHz GaAs EDGE QAM INTEGRATED AMPLIFIER RFAM2790 Preliminary 45MHz TO 1003MHz GaAs EDGE QAM INTEGRATED AMPLIFIER Package: 9-pin, 11.0mm x 11.0mm x 1.375mm VB Power Enable Features  Excellent Linearity  Extremely High Output Capability

TGL34-33A

Abstract: RFAM2790TR13 RFAM2790
Contextual Info: RFAM2790 45MHz to 1003MHz GaAs EDGE QAM INTEGRATED AMPLIFIER RFAM2790 Preliminary 45MHz TO 1003MHz GaAs EDGE QAM INTEGRATED AMPLIFIER Package: 9-pin, 11.0mm x 11.0mm x 1.375mm VB Power Enable Features  Excellent Linearity  Extremely High Output Capability

magnum microwave

Abstract: military connectors Class E amplifier GaN amplifier RF POWER amplifier 10 watt 5 watt microwave amplifier microwave sensors Muffin QB-909 amplifier 10 watt
Contextual Info: 2-6 GHz Broadband 4-Watt Power Amplifiers One Product. Multiple Solutions. Spectrum Microwave A Team of Amplifier & Microwave Specialists There is a new microwave technology leader with a proven track record in military and commercial applications. Spectrum Microwave.

45580

Abstract: 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Contextual Info: Agilent HMMC-5617 6–18 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR: