OPTIONAL RF POWER AMPLIFIER Search Results

TS3332LD

Abstract: U1001 XP1005-BD XU1001-BD 330400
Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD April 2007 - Rev 19-Apr-07 Features Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010

330400

Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD April 2007 - Rev 19-Apr-07 Features Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010

TS3332LD

Abstract: U1001 XP1005-BD XU1001-BD
Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD October 2008 - Rev 16-Oct-08 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Commercial-Level Visual Inspection Using

U1001

Abstract: 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter
Contextual Info: 33.0-40.0 GHz GaAs MMIC Transmitter U1001 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010

U1000

Abstract: XB1004 XU1000
Contextual Info: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing

XB1004-BD

Contextual Info: 17.0-27.0 GHz GaAs MMIC Transmitter U1000-BD May 2007 - Rev 02-May-07 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing

138l6

Abstract: CMY82 amplifier SMD MARKING CODE 211
Contextual Info: GaAs MMIC CMY 82 Preliminary Data Sheet • GaAs receiver front-end for cellular CDMA applications • Adjustable gain control RF amplifier with 20 dB dynamic range • Low LO-power demand of typ. – 10 dBm with 2 LO buffer stages • Optional 1 or 2 LO-buffer stages

CMY82

Abstract: GVQ09253 mmic amplifier marking code lo2 SMD MARKING CODE L6
Contextual Info: GaAs MMIC CMY 82 Preliminary Data Sheet • GaAs receiver front-end for cellular CDMA applications • Adjustable gain control RF amplifier with 20 dB dynamic range • Low LO-power demand of typ. – 10 dBm with 2 LO buffer stages • Optional 1 or 2 LO-buffer stages

Contextual Info: In fineon fach oologia* GaAs MMIC CMY 82 Preliminary Data Sheet • GaAs receiver front-end for cellular CDMA applications • Adjustable gain control RF amplifier with 20 dB dynamic range • Low LO-power demand of typ. - 10 dBm with 2 LO buffer stages • Optional 1 or 2 LO-buffer stages

Contextual Info: 19-6034; Rev 0; 9/11 MAX2090 50MHz to 1000MHz Analog VGA and Power Detector with Optional AGC Loop General Description Benefits and Features The MAX2090 high-linearity analog variable-gain amplifier VGA is a monolithic SiGe BiCMOS attenuator, amplifier, and RMS detector designed to interface with

MAX2090

Abstract: MAX2090ETP JESD51-7 s4db
Contextual Info: 19-6034; Rev 0; 9/11 MAX2090 50MHz to 1000MHz Analog VGA and Power Detector with Optional AGC Loop General Description Benefits and Features The MAX2090 high-linearity analog variable-gain amplifier VGA is a monolithic SiGe BiCMOS attenuator, amplifier, and RMS detector designed to interface with

Contextual Info: 19-6034; Rev 0; 9/11 MAX2090 50MHz to 1000MHz Analog VGA and Power Detector with Optional AGC Loop General Description Benefits and Features The MAX2090 high-linearity analog variable-gain amplifier VGA is a monolithic SiGe BiCMOS attenuator, amplifier, and RMS detector designed to interface with

Contextual Info: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)

Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using

gps l10

Abstract: 24PIN CXG1115AER signal amplifier 800 mhz cdma
Contextual Info: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)

24PIN

Abstract: CXG1115ER
Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

gps l10

Contextual Info: CXG1115AER Dual-band Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using

Contextual Info: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

24PIN

Abstract: CXG1118ER GC118
Contextual Info: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

3618A

Abstract: 24PIN CXG1118ER SONY CHOKE cxg1118
Contextual Info: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features

Die Attach and Bonding Guidelines

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC
Contextual Info: Agilent HMMC-5033 17.7-32 GHz Power Amplifier Data Sheet Features 2.74 x 1.31 mm 108 × 51.6 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5033 is a MMIC power amplifier designed for use in

Contextual Info: 37– 43 GHz Amplifier Technical Data HMMC-5034 Features • 23 dBm Output P -1dB • 8 dB Gain @ 40 GHz • Integrated Output Power Detector Network • 50 Ω Input/Output Matching • Bias: 4.5 Volts, 300 mA Description The HMMC-5034 is a MMIC power amplifier designed for use in

GaAs MMIC ESD, Die Attach and Bonding Guidelines

Abstract: TC926 HMMC-5034 HMMC-5040 Die Attach and Bonding Guidelines
Contextual Info: Agilent HMMC-5034 37-43 GHz Amplifier Data Sheet Features TC926 1.56 x 1.02 mm 61.4 × 40.1 mils ±10 µm (± 0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5034 is a MMIC power amplifier designed for use in

HMMC-5034

Abstract: HMMC-5040 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Contextual Info: Agilent HMMC-5034 37–43 GHz Amplifier Data Sheet TC926 Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5034 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 37 GHz to 42.5 GHz range. At 40 GHz it