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    OPTIMOS P3 Search Results

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    OPTIMOS P3 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSZ180P03NS3EGATMA1 (OPTIMOS P3)

    Mosfet, P-Ch, -30V, -39.6A, Pg-Tsdson-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-39.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0135Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Rohs Compliant: Yes |Infineon BSZ180P03NS3EGATMA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BSZ180P03NS3EGATMA1 (OPTIMOS P3) Cut Tape 25,959 1
    • 1 $0.66
    • 10 $0.47
    • 100 $0.33
    • 1000 $0.22
    • 10000 $0.22
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    Infineon Technologies AG BSL308CH6327XTSA1 (OPTIMOS P3 + OPTIMOS 2 SERIES)

    Mosfet, n&p-Ch,30V,2.3A, tsop, transistor Polarity-N And P Complement, continuous Drain Current Id-2.3A, drain Source Voltage Vds-30V, on Resistance Rdson-0.044Ohm, rdson Test Voltage Vgs-10V, threshold Voltage Vgs-1.6V, power Rohs Compliant: Yes |Infineon BSL308CH6327XTSA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BSL308CH6327XTSA1 (OPTIMOS P3 + OPTIMOS 2 SERIES) Cut Tape 20,035 1
    • 1 $0.84
    • 10 $0.46
    • 100 $0.31
    • 1000 $0.24
    • 10000 $0.24
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    Infineon Technologies AG BSZ180P03NS3GATMA1 (OPTIMOS P3)

    Mosfet, P-Ch, -30V, -39.6A, 150Deg C; Transistor Polarity:P Channel; Continuous Drain Current Id:-39.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0135Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Rohs Compliant: Yes |Infineon BSZ180P03NS3GATMA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BSZ180P03NS3GATMA1 (OPTIMOS P3) Cut Tape 4,630 5
    • 1 $0.87
    • 10 $0.62
    • 100 $0.43
    • 1000 $0.31
    • 10000 $0.31
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    Infineon Technologies AG BSZ120P03NS3GATMA1 (OPTIMOS P3)

    Mosfet, P-Ch, -30V, -40A, Pg-Tsdson-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-40A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.009Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Rohs Compliant: Yes |Infineon BSZ120P03NS3GATMA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BSZ120P03NS3GATMA1 (OPTIMOS P3) Cut Tape 4,252 1
    • 1 $0.88
    • 10 $0.57
    • 100 $0.41
    • 1000 $0.27
    • 10000 $0.27
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    Infineon Technologies AG BSL308PEH6327XTSA1 (OPTIMOS P3 SERIES)

    Mosfet, P-Ch, 30V, 2A, 150Deg C, 0.5W; Channel Type:P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:2A; Continuous Drain Current Id P Channel:2A Rohs Compliant: Yes |Infineon BSL308PEH6327XTSA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BSL308PEH6327XTSA1 (OPTIMOS P3 SERIES) Cut Tape 4,007 1
    • 1 $0.18
    • 10 $0.18
    • 100 $0.18
    • 1000 $0.18
    • 10000 $0.18
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    Find more OPTIMOS P3 price and stock on Findchips.com

    OPTIMOS P3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    OPTIMOS p3

    Abstract: BSB029P03NX3 BSB029P03NX3G
    Contextual Info: n-Channel Power MOSFET OptiMOS BSB029P03NX3 Data Sheet 1.92, 2011-03-21 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB029P03NX3 G 1 Description OptiMOS™ P3 -30V products are class leading power P-Channel MOSFETs for highest power density and energy efficient solutions. Lowest on state resistance


    Original     		BSB029P03NX3 BSB029P03NX3 OPTIMOS p3 BSB029P03NX3G PDF

    BSB027P03LX3G

    Abstract: infineon MOSFET parameter test BSB027P03LX3
    Contextual Info: p-Channel Power MOSFET OptiMOS P3 BSB027P03LX3 G Data Sheet 1.9, 2011-03-02 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB027P03LX3 G 1 Description OptiMOS™ P3 -30V products are class leading power P-Channel MOSFETs for highest power density and energy efficient solutions. Lowest on state resistance


    Original     		BSB027P03LX3 BSB027P03LX3G infineon MOSFET parameter test PDF

    Contextual Info: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features • Complementary P + N channel · Enhancement mode VDS · Logic level 4.5V rated RDS(on),max · Avalanche rated P N -30 30 V VGS=±10 V 80 57 mW VGS=±4.5 V 130 93 -2.0


    Original     		BSL308C IEC61249-2-21 H6327: PDF

    BSL308C

    Abstract: HLG09283 L6327
    Contextual Info: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features P N -30 30 V V GS=±10 V 80 57 mΩ V GS=±4.5 V 130 93 -2.0 2.3 • Complementary P + N channel · Enhancement mode V DS · Logic level 4.5V rated R DS(on),max · Avalanche rated


    Original     		BSL308C L6327: BSL308C HLG09283 L6327 PDF

    80n03

    Abstract: OPTIMOS p3 OPTIMOS OPTIMOS pfet3 to220b
    Contextual Info: OptiMOS / OptiMOS-T - Naming System S ! products developed before 2004 I ! products developed in 2004 and later I P B 80 N 03 S2 L 03 Device: P for Power-MOSFET Package Type: P for TO220 B for TO263/D²PAK D for DPAK TO252 I for IPAK (TO262) C for SuperSO8 (tbd)


    Original     		O263/D 80n03 OPTIMOS p3 OPTIMOS OPTIMOS pfet3 to220b PDF

    JESD22-A114

    Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3 080P3NS JESD22-A114 PDF

    IEC61249-2-21

    Abstract: JESD22-A114
    Contextual Info: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8


    Original     		BSO080P03NS3E IEC61249-2-21 080P3NSE IEC61249-2-21 JESD22-A114 PDF

    D148

    Abstract: JESD22-A114 080P3NSE
    Contextual Info: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3E 080P3NSE D148 JESD22-A114 080P3NSE PDF

    Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features VDS • Dual P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V VGS=-10 V 80 mW VGS=-4.5 V 130 ID -2.0 A • ESD protected PG-TSOP-6 • Qualified according to AEC Q101


    Original     		BSL308PE IEC61249-2-21 H6327: PDF

    DD108

    Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101


    Original     		BSL308PE L6327: -200A/ 150tact DD108 PDF

    Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101


    Original     		BSL308PE L6327: PDF

    IEC61249-2-21

    Abstract: JESD22-A114
    Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3 IEC61249-2-21 080P3NS IEC61249-2-21 JESD22-A114 PDF

    JESD22-A114

    Contextual Info: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3E 080P3NSE JESD22-A114 PDF

    JESD22-A114

    Abstract: d148
    Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3 080P3NS JESD22-A114 d148 PDF

    080P3NS

    Abstract: GS-10
    Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features VDS • single P-Channel in SO8 • Qualified according JEDEC1 for target applications • 150°C operating temperature RDS on),max -30 V VGS=-10 V 8.0 mW VGS=-6 V 11.4 ID -14.8 A • V GS=25 V, specially suited for notebook applications


    Original     		BSO080P03NS3 IEC61249-2-21 080P3NS 080P3NS GS-10 PDF

    f21a

    Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101


    Original     		BSL308PE L6327: -200A/ 150nces. f21a PDF

    BSS308PE

    Abstract: JESD22-A114 L6327 Q101-3 kv 201-t
    Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-SOT-23 • Qualified according to AEC Q101


    Original     		BSS308PE PG-SOT-23 L6327: BSS308PE JESD22-A114 L6327 Q101-3 kv 201-t PDF

    PG-SOT23

    Abstract: BSS308PE L6327
    Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101


    Original     		BSS308PE PG-SOT23 L6327: PG-SOT23 BSS308PE L6327 PDF

    f21 diode sot23

    Abstract: f21 diode marking YFs
    Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101


    Original     		BSS308PE PG-SOT23 L6327: -200A/ f21 diode sot23 f21 diode marking YFs PDF

    Contextual Info: Product specification BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features ­30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101


    Original     		BSS308PE PG-SOT-23 IEC61249-2-21 PG-SOT23 H6327: PDF

    BSS308PE H6327

    Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101


    Original     		BSS308PE IEC61249-2-21 PG-SOT-23 PG-SOT23 H6327: BSS308PE H6327 PDF

    Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features ­30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID A • ESD protected PG-SOT-23 • Qualified according to AEC Q101


    Original     		BSS308PE PG-SOT-23 IEC61249-2-21 PG-SOT23 H6327: PDF

    BSS308PE

    Abstract: JESD22-A114 L6327
    Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-SOT-23 • Qualified according to AEC Q101


    Original     		BSS308PE PG-SOT-23 L6327: BSS308PE JESD22-A114 L6327 PDF

    BSL308PE

    Abstract: JESD22-A114 L6327
    Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-TSOP-6 • Qualified according to AEC Q101


    Original     		BSL308PE L6327: BSL308PE JESD22-A114 L6327 PDF