BSS308PE Search Results
BSS308PE Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BSS308PE | Infineon Technologies | P-Channel MOSFETs; Package: PG-SOT23-3; Package: SOT-23; VDS (max): -30.0 V; RDS (on) (max) (@10V): 80.0 mOhm; RDS (on) (max) (@4.5V): 130.0 mOhm; RDS (on) (max) (@2.5V): -; | Original | 245.2KB | 9 | ||
| BSS308PEH6327 | Infineon Technologies | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2.0A SOT23 | Original | 9 | |||
| BSS308PE H6327 | TY Semiconductor | MOSFET P-CH 30V 2.0A - SOT-23 | Original | 188.35KB | 3 | ||
| BSS308PEH6327XTSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 2A SOT23 | Original | 243.5KB | |||
| BSS308PEL6327 | Infineon Technologies | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2A SOT-23 | Original | 9 | |||
| BSS308PEL6327HTSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 2A SOT-23 | Original | 495.17KB |
BSS308PE Price and Stock
Infineon Technologies AG BSS308PEH6327XTSA1Trans MOSFET P-CH 30V 2A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSS308PEH6327XTSA1 | 240,000 | 3,000 |
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| BSS308PEH6327XTSA1 | 17,903 | 18 |
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BSS308PEH6327XTSA1 | Tape & Reel | 1,095,000 | 25 Weeks | 3,000 |
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BSS308PEH6327XTSA1 | 240,000 | 25 Weeks | 3,000 |
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| BSS308PEH6327XTSA1 | Cut Strips | 17,903 | 25 Weeks | 1 |
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BSS308PEH6327XTSA1 | Cut Tape | 158,511 | 5 |
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| BSS308PEH6327XTSA1 | Tape & Reel | 158,511 | 100 |
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| BSS308PEH6327XTSA1 | Tape & Reel | 9,000 |
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BSS308PEH6327XTSA1 | 2,158 | 1 |
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| BSS308PEH6327XTSA1 | 100 |
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BSS308PEH6327XTSA1 | 1,726 |
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| BSS308PEH6327XTSA1 | 1,726 |
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| BSS308PEH6327XTSA1 | 1,546 |
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| BSS308PEH6327XTSA1 | 1,546 |
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| BSS308PEH6327XTSA1 | 80 |
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| BSS308PEH6327XTSA1 | 80 |
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BSS308PEH6327XTSA1 | 3,099 | 1 |
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BSS308PEH6327XTSA1 | 10,552 | 1 |
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BSS308PEH6327XTSA1 | 907,449 |
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BSS308PEH6327XTSA1 | 578,050 |
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Infineon Technologies AG BSS308PEH6327INSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSS308PEH6327 | 857,000 |
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Infineon Technologies AG BSS308PE H6327INSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSS308PE H6327 | 36,197 |
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BSS308PE H6327 | 210,000 |
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Buy Now | |||||||
Infineon Technologies AG BSS308PEL6327HTSA1Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSS308PEL6327HTSA1 | 8,142 |
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Get Quote | |||||||
Infineon Technologies AG BSS308PEL6327Small Signal Field-Effect Transistor, 2.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSS308PEL6327 | 813 |
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BSS308PE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BSS308PE
Abstract: JESD22-A114 L6327 Q101-3 kv 201-t
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bss308pepg-sot-23l6327jesd22-a114+2 | |
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Contextual Info: Product specification BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101 |
Original |
bss308pepg-sot-23iec61249-2-21pg-sot23+1 | |
BSS308PE H6327Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101 |
Original |
bss308peiec61249-2-21pg-sot-23pg-sot23+2 | |
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Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID A • ESD protected PG-SOT-23 • Qualified according to AEC Q101 |
Original |
bss308pepg-sot-23iec61249-2-21pg-sot23+1 | |
BSS308PE
Abstract: JESD22-A114 L6327
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Original |
bss308pepg-sot-23l6327jesd22-a114 | |
GPI04Contextual Info: 3 2 2 R29 LED5 475 1% B R41 33 2512 VREG R37 33 2512 R5 100 1% C5 C5 OPT Q5 0805 BSS308PE 5 16 17 19 20 C31 10nF S5 21 22 23 Q4 BSS308PE 24 C4 C4 OPT 0805 S4 SDO IB C10 SDI(IC) S10 SCK(ILP) C9 CSB(ILM) S9 ISOMD C8 WDT S8 DRIVE C7 VREG S7 SWTEN C6 VREF1 S6 |
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bss308peltc6804ig-21942bgpi04 | |
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Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101 |
Original |
bss308pepg-sot-23iec61249-2-21pg-sot23+1 | |
PG-SOT23
Abstract: BSS308PE L6327
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Original |
bss308pepg-sot23l6327 | |
f21 diode sot23
Abstract: f21 diode marking YFs
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bss308pepg-sot23l6327-200a/+3 | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6 | |
bsl307spContextual Info: BSL307SP Rev 1.5 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5 |
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bsl307spl63273000pcs/r | |
BCM89810
Abstract: BROADCOM BCM89810 ad2410 schematic usb to rj45 cable extender AT/BCM89810 INA3221
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adsp-sc584445-4060-2-ndsrn8040-6r8ycdbc540-g+9 | |
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Contextual Info: BSL307SP Rev 1.6 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5 |
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bsl307spiec61249h63273000pcs/r | |
bsl307spContextual Info: BSL307SP Rev 1.4 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5 |
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bsl307spl63273000pcs/r | |
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519b152-h9345-g2-x-7600px3544px7510+8 | |
TLF35584
Abstract: TLE9180 alternator regulator protocol BSS BTN8980 TC27x TLE9834 TC27x data spec alternator BSD TLE9832 Infineon TLE9180
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tlf35584tle9180alternator regulator protocol bssbtn8980+6 | |
GMLAN
Abstract: TLE 4209A tle 8209 TLE8718SA BTS6143D smd code 724g 742T BTS50080-1TMA TLE7240SL tle 7718
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12f-1b124-h9343-g1-x-7600gmlantle 4209a+8 | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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tle4957csle66r35e7sak-xc2060m-104f80l aaesd204+6 | |
bsl307spContextual Info: BSL307SP Rev 1.3 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5 |
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bsl307spl63273000pcs/r | |
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Contextual Info: Rev 2.0 BSL307SP OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5 |
Original |
bsl307spiec61249h63273000pcs/r | |