OPERATIONAL AMPLIFIER 10GHZ Search Results

operational amplifier 10GHz

Contextual Info: SMT High Frequency Chip Thermistor 0805 HFT Series - Operational over 10Ghz. - Resistance value stays virtually the same from 10-15Ghz. - Very stable Temperature characteristics from -20oC to +100oC from 0 to 10Ghz. - Ideal for compensating temperature drift in high frequency amplifier applications.

T105 25E3

Abstract: GAL 16 v 8 D DIP 2SK 1110 5011F analog device 260a OP260G
Contextual Info: ANALOGDEVICES fAX-ON-DEMAND HOTLINE - Page 38 -. ANALOG W DEVICES - m m Dual,High-Speed, CurrentFeedback Operational Amplifier OP-260 - PIN CONNECTIONS FEATURES Very High Slew Rate . .3dB Bandwidth Av=+10 . 550V/IlSTyp 40MHz Typ . BandwidthIndependentof Gain

OP-26QF

Abstract: OP260GP op 30MHZ OP-260 OP260AJ OP260AZ OP260FJ OP260FZ OP260 FET RV power transistor X 52
Contextual Info: OP-260 PMÏ DUAL, HIGH-SPEED, CURRENT FEEDBACK, OPERATIONAL AMPLIFIER l’rriision Monolitlìits Int. I FEATURES .1000V/|is Typ • Very High Slew Rate • -3dB Bandwidth A ^ + 1 ).90MHz Typ • Bandwidth Independent of Gain

bjt ic operational amplifier

Abstract: OP260GP PMI OP AMP
Contextual Info: OP-260 PMÏ> DUAL, HIGH-SPEED, CURRENT FEEDBACK, OPERATIONAL AMPLIFIER FEATURES • Very High Slew R ata. 1000V/|xs Typ • -3 d B Bandw idth Av= + 1 . 90MHz Typ • B andw idth Independent o f Gain

transistor PNP A124 EQUIVALENT

Contextual Info: A N A LO G D E V IC E S Dual, High-Speed, Current Feedback Operational Amplifier □ 0P-260 PIN CONNECTIONS FEATURES • • • • • Very High Slew R a te . 550V/nsTyp -3dB Bandwidth A ^ + 1 0 .40MHzTyp

Contextual Info: OP-260 PMÏ DUAL, HIGH-SPEED, CURRENT FEEDBACK, OPERATIONAL AMPLIFIER Precision M n n o lith ics I FEATURES • Very High S lew R a te . 10OOV/jis Typ • -3 d B Bandwidth A v= + 1 ). 90M Hz Typ

Contextual Info: A N A LO G D E V IC E S Dual, High-Speed, Current Feedback Operational Amplifier □ 0P-260 FE A T U R E S • Very High Slew R a te . 550V/ns Typ • -3dB Bandwidth Av= + 1 0 .40M HzTyp

OP260GP PMI

Contextual Info: OP-260 DUAL, HIGH-SPEED, CURRENT FEEDBACK, OPERATIONAL AMPLIFIER P recisio n M o n o lith ic s Inc. PIN CONNECTIONS FEATURES • • • • • • V ery H igh S le w R a te . 1000V/|xs Typ - 3 d B B a n d w id th A y =+1 . 90M H z Typ

Contextual Info: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

M1DGAN202

Contextual Info: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB

Contextual Info: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB

Contextual Info: RFHA1101 Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

RFHA

Abstract: RFHA1101
Contextual Info: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

Contextual Info: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

opa2340 application

Contextual Info: OPA OPA340 OPA2340 OPA4340 434 OPA 340 OPA 2340 OPA 434 SINGLE-SUPPLY, RAIL-TO-RAIL OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● DRIVING A/D CONVERTERS ● PCMCIA CARDS ● DATA ACQUISITION ● PROCESS CONTROL

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz

Contextual Info: S i GEC PLESSEY S I M 1 C O i\ 1> U .T O H ADVANCE INFORMATION S SP8855D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP88550 is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts in the

Contextual Info: S i GEC P L E S S E Y S I >1 I t O S I l ( I D ADVANCE INFORMATION l< S SP8854D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP8854D is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts In the

Contextual Info: S i GEC PLESSEY SI M i l ADVANCE INFORMATION O |\ I U I O K S SP8852D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP8852D is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts in the

Traveling Wave Amplifier

Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Contextual Info: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT

VCO 10GHZ oscillator

Abstract: RF TRANSISTOR 10GHZ 10GHz oscillator application of colpitts oscillator colpitts oscillator RF TRANSISTOR 10GHZ low noise SP8852E SP8854E SP8855E DS4238
Contextual Info: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad

SP8852E

Abstract: SP8854E SP8855E 10GHz counters
Contextual Info: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad

Contextual Info: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad

DS4238

Abstract: colpitts oscillator construction TRANSISTOR RF 1003 VCO 10GHZ oscillator SP8852E SP8854E SP8855E
Contextual Info: SP8854E 2•7GHz Parallel Load Professional Synthesiser Preliminary Information FEATURES • 2·7 GHz Operating Frequency ■ Single 5V Supply ■ Low Power Consumption <1·3W ■ High Comparison Frequency : 20MHz ■ High Gain Phase Detector : 1mA/rad ■ Zero ‘Dead Band’ Phase Detector