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2SD1294

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain

Contextual Info: TC55417P/J —15H. TC55417P/J-20H TC55417P/J—25H. TC55417P/J-35H • * 16,384 W O R D x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55417P/J—H is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5 - volt supply.

S1854

Abstract: transistor s1854 s1854 a s1854 equivalent ic s1854 SI854 REGULATOR s1854 transistor s1854 ic error REGULATOR IC FOR 150V s1854 B1036
Contextual Info: SILICON N-SUBSTRATE MONOLITHIC TYPE S1854 SI854 IS A REGULATOR DRIVER FOR LINE OPERATED TV, Unit in mm WHICH ARE BUILT UP OF ERROR AMPLIFIER TRANSISTOR, 10.3MAX. 0&6±O,2 STANDARD VOLTAGE ZENER DIODE AND POLY-SILICON RESISTORS ON MONOLITHIC CHIP. FEATURES:

260-pin

Contextual Info: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.

Contextual Info: INTRODUCTION Today's portable and battery-operated system designer is faced w ith the problem of keeping ahead when addressing system perform ance, long battery life, in terfacin g te ch n o lo gy, and reliability. Toshiba's low vo lta g e high perform ance C2MOS logic fam ilies help designers achieve these goals.

lt928

Abstract: 55328P TC55328J
Contextual Info: 3 2 ,7 6 8 W O R D x 8 B IT C M O S S TA TIC R A M D E S C R IP T IO N The TC55328P/J is a 262,144 bits high speed static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's CMOS

Contextual Info: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048.5,'6 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V sjpply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.

TCD131D

Abstract: TC74HC04P 2SA1015-Y 2SA1015 Y
Contextual Info: C D 1 3 1 D The TCD131D is a high resolution and high sensitivity 2048-element linear image sensor. The device can be used foi OCR» POS handscanner bar-code type , and other optical measurements. The device is operated by only 12V power supply. The device is mounted in 22-pin Cerdip package

912BI

Contextual Info: TOSHIBA NIOS MEMORY PRODUCTS TC55329P/J-20, TC55329P/J-25 TC55329P/J-35 DESCRIPTION The TC55329P/J is a 294,912 b i t s high speed s t a tic random access memory organ ized as 32,768 words by 9 b i t s using CMOS technolo gy, and operated from a s in g le 5 -v o lt supply.

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC55465P/J-20, TC55465P/J-25 TC55465P/J-35 ¡d e s c r ip t io n ] The TC55465P/J is a 262,144 b i t s high speed s t a t i c random ac c e ss memory organ ized as 65,536 words by 4 b i t s using CMOS tech n o lo g y , and operated from a s in g le 5 -v o lt supply.

2SD1092

Abstract: TCS5C
Contextual Info: 2SD1092 SILICON NPN TRIPLE DIFFUSED TYPE POWER REGULATOR FOR LINE OPERATED TV. Unit in m m 03.Z±O.2 FEATURES : . Excellent Wide 80 W . S e c Safe Operating Area at Tc=25°C . I n c l u d e d A b a l a n c h e Di o d e : . High DC Current Gain : h F E — 500

Contextual Info: TOSHIBA MOS MEMORY PRODOCTS TC55417P/J-15H, TC55417P/J-20H Id e s c r i p t i o h I The TC55417P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power

TC55416P-20H

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC55416P-15H, TC55416P-20H ¡d e s c r i p t i o n ] The TC55416P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply, Toshiba's high performance device technology provides both high speed and low power

55257

Abstract: TC55257AFL-10L apl101 TC55257APL
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC55257APL-85L/APL-10L/APL-12L TC55257AFL-85L/AFL-1OL/AFL-12L DESCRIPTION The TC55257APL is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply. Advanced

Contextual Info: INA INA122 122 INA 122 Single Supply, MicroPower INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● LOW QUIESCENT CURRENT: 60µA ● PORTABLE, BATTERY OPERATED SYSTEMS ● INDUSTRIAL SENSOR AMPLIFIER: Bridge, RTD, Thermocouple ● PHYSIOLOGICAL AMPLIFIER:

IS42VS16100E

Abstract: 42VS16100E IS42VS16100E-75BLI
Contextual Info: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11

2SD849

Contextual Info: Inchange Semiconductor Product Specification 2SD849 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Line-operated horizontal deflection output applications PINNING see fig.2 PIN DESCRIPTION 1

55416P-20H

Abstract: 1S1212 TC55416P-15H
Contextual Info: 16,384 W O R D x 4 BIT C M O S STATIC R A M D E S C R IP T IO N T he T C 5 5 4 1 6 P -H is a 65,536 b it high speed static random access m em ory organized as 16,384 words by 4 b its u sing CMOS technology, and operated from a single 5 - v o l t supply. Toshiba's high

Contextual Info: Semiconductor, Inc. 'W TC 1072 TC 1073 50mA AND 100 mA CMOS LDOs WITH SHUTDOWN, ERROR OUTPUT, AND VREF BYPASS FEATURES GENERAL DESCRIPTION • ■ ■ The TC1072 and TC1073 are high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated sys­

55100

Abstract: Hamlin din mount 35mm hamlin 55100
Contextual Info: www.hamlin.com 55100 Mini Flange Mount Hall Effect Sensor Features and Benefits Features Benefits • Magnetically operated position sensor • Digital, latching or programmable analogue types available • Medium, high or programmable senisitivities • 3 wire voltage output or 2 wire

MJE1320

Contextual Info: Inchange Semiconductor Product Specification MJE1320 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220 package ・High voltage ・Low collector saturation voltage APPLICATIONS ・For high-voltage ,power switching in inductive circuits and line operated

NJVMJD47T4G

Contextual Info: MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

MJD350t4g

Contextual Info: MJD340, NJVMJD340T4G NPN , MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

Wire Cable AWG

Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Hand Operated Plier Type Tools • Installer controlled crimp • Available with wire stripping and cutting features Part Number CT-260 CT-260 CT-200 CT-200 B1. Cable Ties • Plier type crimp for #22 – 10 AWG insulated and non-insulated