ON22 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNZ2253 (ON2253) Reflective Photosensor For contactless SW and object detection • Overview M Di ain sc te on na tin nc ue e/ d CNZ2253 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used

ON222

Contextual Info: CUB ON222 R Austria Mikro Systeme International 0.6 µm CMOS ON222 is an OR / NAND circuit providing the logical function Q = NOT [ A+B .(C+D).(E+F) ]. Truth Table Capacitance A B C D E F Q L L X X X X H X X L L X X H X X X X L L H A X H X H X H L B X X X

Contextual Info: Reflective Photosensors Photo Reflectors CNB2301 (ON2270) Reflective photosensor Non-contact point SW, object sensing Unit: mm 1 3 Chip center 2.7±0.2 0.4 4-0.5 ±0.1 2 0.15 3.4±0.3 1: Anode 2: Cathode 3: Emitter 4: Collector PRSMW104-001 Package • Absolute Maximum Ratings Ta = 25°C

Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2280 Reflective Photosensor U nit : mm • Outline M ark fo r indicating em itter side CO.5 O N N 2 2 8 0 is a sm all, th in re fle ctiv e p h o to se n so r c o n sistin g o f a high efficiency G aA s infrared light em itting d iode w hich is integrated

ON2253

Abstract: CNZ2253
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNZ2253 (ON2253) Reflective Photosensor For contactless SW and object detection • Overview  Features  High sensitivity  Small size, light weight

Contextual Info: Reflective Photosensors Photo Reflectors ON2280 Reflective Photosensor Unit : mm Outline Chip center 2.7±0.2 0.4 M Di ain sc te on na tin nc ue e/ d 9.0±1.0 ONN2280 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated

CNB2301

Abstract: ON2270 Reflective photosensor response time
Contextual Info: Reflective Photosensors Photo Reflectors CNB2301 (ON2270) Reflective Photosensor Unit : mm Overview 9.0±1.0 CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor used as the photo

high sensitivity reflective phototransistor

Abstract: phototransistor visible light ON2270 ONN2270 reflective photo sensor
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2270 Reflective Photosensor U nit : mm • Outline Mark for indicating anode side C0.5 O N N 2 270 is a sm all, th in re fle ctiv e p h o to se n so r c o n sistin g o f a high efficiency G aA s infrared light em itting diode w hich is integrated

Contextual Info: Reflective Photosensors Photo Reflectors CNZ2253 (ON2253) Reflective photosensor Mark for indicating LED side 7.5±0.2 • Overview (3.2) φ2.2±0.2 6.0±0.2 • Small size and light weight 0.5 9.6±0.3 1.7±0.2 • High sensitivity 10.6±0.3 10.2 min. ■ Features

ON2280

Abstract: ONN2280 NT 407 F TRANSISTOR
Contextual Info: Reflective Photosensors Photo Reflectors ON2280 Reflective Photosensor Unit : mm Outline 9.0±1.0 M Di ain sc te on na tin nc ue e/ d ONN2280 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated

Contextual Info: Reflective Photosensors Photo Reflectors ON2270 Reflective Photosensor Unit : mm Outline 9.0±1.0 ONN2270 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor is used as the photo

Radiation Detector

Abstract: infrared photo reflector photo darlington sensor human detection sensors circuit VISIBLE LIGHT PHOTOTRANSISTOR blue light PHOTO detector GALLIUM ARSENIDE ir detector high sensitivity reflective phototransistor phototransistor as sensor Reflective Optical Sensor with Transistor Output
Contextual Info: Reflective Photosensors Photo Reflectors CNB2301 (ON2270) Reflective photosensor Non-contact point SW, object sensing Unit: mm 9.0±1.0 2.0±0.2 3 Chip center 0.4 4-0.5 • Applications • Detection of paper, film and cloth • Detection of position and edge

Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2253 Reflective Photosensor Mark for indicating LED side • Outline O N 2253 is a p h o to se n so r d etectin g the chan g e o f re fle ctiv e light , \ 5 in w hich a high efficiency G aA s infrared light em itting diode is used

high sensitivity reflective phototransistor

Abstract: phototransistor visible light ON2280 ONN2280
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2280 Reflective Photosensor U nit : mm • Outline M ark fo r indicating em itter side CO.5 O N N 2 280 is a sm all, th in re fle ctiv e p h o to se n so r c o n sistin g o f a high efficiency G aA s infrared light em itting diode w hich is integrated

CNB2301

Abstract: ON2270
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB2301 (ON2270) Reflective Photosensor For contactless SW and object detection • Overview CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated

ON22

Contextual Info: CUB ON22 R Austria Mikro Systeme International 0.6 µm CMOS ON22 is an OR / NAND circuit providing the logical function Q = NOT [ A+B .(C+D) ]. Truth Table Capacitance A B C D Q L X X X H H L X H H X X X L H X X H X L X H H X H H L L L L Ci (pF) A B C D ON22

Contextual Info: Reflective Photosensors Photo Reflectors CNZ2253 (ON2253) Reflective photosensor Mark for indicating LED side 7.5±0.2 • Overview (3.2) 4.0±0.2 CNZ2253 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used

CNZ2253

Abstract: ON2253
Contextual Info: Reflective Photosensors Photo Reflectors CNZ2253 (ON2253) Reflective Photosensor Mark for indicating LED side 7.5±0.2 (3.2) 4.0±0.2 CNZ2253 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB2301 (ON2270) Reflective Photosensor For contactless SW and object detection • Overview M Di ain sc te on na tin nc ue e/ d CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated

high sensitivity reflective phototransistor

Abstract: CNB2301 ON2270
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB2301 (ON2270) Reflective Photosensor For contactless SW and object detection • Overview  Features  Ultraminiature: 2.7 mm x 3.4 mm  Visible light cutoff resin is used

Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2270 Reflective Photosensor Unit : mm • Outline M ark for indicating anode side C0.5 O N N 2 2 7 0 is a sm all, th in re fle c tiv e p h o to se n so r c o n sistin g o f a high efficiency G aA s infrared light em itting diode w hich is integrated

ON2253

Abstract: CNZ2253
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNZ2253 (ON2253) Reflective Photosensor For contactless SW and object detection • Overview CNZ2253 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

OA2222L

Abstract: XN2222 025x
Contextual Info: SEMICONDUCTOR CORPORATION Data Sheet High Performance GLX Family Low Power GaAs Gate Arrays Features • Sea-of-Gates Core Low-Power Macros Available • Five Array Sizes: 15K, 40K, 80K, 120K and 220K Raw Gates Standard TTL, LVTTL, ECL, LVPECL, GTL, HSTL and LVDS I/O Compatibility