ON SOT523 Search Results

Contextual Info: Single N-channel MOSFET ELM5E400PA-S •General description ■Features ELM5E400PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=20V Id=0.7A Rds(on) = 360mΩ (Vgs=4.5V) Rds(on) = 420mΩ (Vgs=2.5V)

Contextual Info: Single P-channel MOSFET ELM5E401PA-S •General description ■Features ELM5E401PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-0.7A Rds(on) = 620mΩ (Vgs=-4.5V) Rds(on) = 860mΩ (Vgs=-2.5V)

Contextual Info: Single N-channel MOSFET ELM5E402PA-S •General description ■Features ELM5E402PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=20V Id=0.7A Rds(on) = 360mΩ (Vgs=4.5V) Rds(on) = 420mΩ (Vgs=2.5V)

Contextual Info: PPJE138K 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V 350mA Current SOT-523 Unit : inch mm Features  RDS(ON) , VGS@10V, ID@500mA<1.6Ω  RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω  RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω  Advanced Trench Process Technology

Contextual Info: PPJE8406 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current 800mA SOT-523 Unit : inch mm Features  RDS(ON), VGS@4.5V,IDS@500mA=0.4Ω  RDS(ON), VGS@2.5V,IDS@300mA=0.7Ω  RDS(ON), VGS@1.8V,IDS@100mA=1.2Ω(typ)  Advanced Trench Process Technology

DMN33D8L

Contextual Info: DMN33D8LT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ID TA = +25°C 200 mA 115 mA RDS(ON) 5 Ω @ VGS = 4V 7 Ω @ VGS = 2.5V 30V NEW PRODUCT NEW PRODUCT Features Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT3N01Z Power MOSFET N -CH AN N EL SI LI CON M OSFET GEN ERAL-PU RPOSE SWI T CH I N G DEV I CE APPLI CAT I ON S  DESCRI PT I ON The UT3N01Z uses UTC advanced technology to provide excellent RDS ON , low gate charge and operation with low gate

ELM5E401PA

Contextual Info: 单 P 沟道 MOSFET ELM5E401PA-S •概要 ■特点 ELM5E401PA-S 是 P 沟道低输入电容，低工作电 •Vds=-20V 压，低导通电阻的大电流 MOSFET。 ·Id=-0.7A ·Rds on = 620mΩ (Vgs=-4.5V) ·Rds(on) = 860mΩ (Vgs=-2.5V) ·Rds(on) = 1450mΩ (Vgs=-1.8V)

ELM5E402PA

Contextual Info: 单 N 沟道 MOSFET ELM5E402PA-S •概要 ■特点 ELM5E402PA-S 是 N 沟道低输入电容，低工作电 •Vds=20V 压，低导通电阻的大电流 MOSFET。 · Id=0.7A ·Rds on = 360mΩ (Vgs=4.5V) ·Rds(on) = 420mΩ (Vgs=2.5V) ·Rds(on) = 560mΩ (Vgs=1.8V)

ELM5E400PA

Contextual Info: 单 N 沟道 MOSFET ELM5E400PA-S •概要 ■特点 ELM5E400PA-S 是 N 沟道低输入电容，低工作电 •Vds=20V 压，低导通电阻的大电流 MOSFET。 · Id=0.7A ·Rds on = 360mΩ (Vgs=4.5V) ·Rds(on) = 420mΩ (Vgs=2.5V) ·Rds(on) = 560mΩ (Vgs=1.8V)

Contextual Info: Small Signal Schottky Diodes CDBH3-00340-G Reverse Voltage: 40Volts Forward Current: 30mA RoHS Device SOT-523 Features 0.067 1.70 0.059(1.50) -Designed for mounting on small surface. -High speed switching application, circuit protection. -Low turn-on voltage

Contextual Info: Small Signal Schottky Diodes CDBH3-54/S/C/A-HF Reverse Voltage: 30 Volts Forward Current: 200 mA RoHS Device Halogen Free SOT-523 Features -Designed for mounting on small surface. -High speed switching application, circuit protection. -Low turn-on voltage

aauv

Abstract: MAXIM MAX4236EUT TVS SMB MAX5977AETP LTR101 B540C GRM21BR60J106K GRM31CR61E106K MMBT22AT-7-F sot23 a02 Transistor
Contextual Info: 19-5750; Rev 0; 1/11 MAX5977A Evaluation Kit Evaluates: MAX5977A/MAX5977B General Description Features The MAX5977A EV kit is a hot-swap controller circuit board providing a controlled turn-on for high-power, high-capacitance loads, thus preventing glitches on the

Contextual Info: PJE260N02 N-Channel, 20V, 0.78A, Small Signal MOSFET 0.044 1.10 0.035(0.90) 0.067(1.70) 0.059(1.50) • Supper high density cell design for extremely low Rds(on) • Exceptional ON resistance and maximum DC current capability • Driver: Relays, Solenolds, Lamps, Hammers

marking code k7k transistor

Abstract: Product Type Marking Code K7K
Contextual Info: DMN601TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: PJE260N02 N-Channel, 20V, 0.78A, Small Signal MOSFET 0.044 1.10 0.035(0.90) 0.067(1.70) 0.059(1.50) • Supper high density cell design for extremely low Rds(on) • Exceptional ON resistance and maximum DC current capability • Driver: Relays, Solenolds, Lamps, Hammers

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

Contextual Info: シングル N チャンネル MOSFET ELM5E402PA-S •概要 ■特長 ELM5E402PA-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=0.7A ・ Rds on = 360mΩ (Vgs=4.5V) ・ Rds(on) = 420mΩ (Vgs=2.5V)

Contextual Info: シングル N チャンネル MOSFET ELM5E400PA-S •概要 ■特長 ELM5E400PA-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=0.7A ・ Rds on = 360mΩ (Vgs=4.5V) ・ Rds(on) = 420mΩ (Vgs=2.5V)

Contextual Info: シングル P チャンネル MOSFET ELM5E401PA-S •概要 ■特長 ELM5E401PA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-0.7A ・ Rds on = 620mΩ (Vgs=-4.5V) ・ Rds(on) = 860mΩ (Vgs=-2.5V)

SSF32E0E

Contextual Info: SSF32E0E GENERAL FEATURES ● VDS =30V,ID = 0.01A RDS ON < 8Ω @ VGS=4V RDS(ON) < 13Ω @ VGS=2.5V ESD Rating：1000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram APPLICATION

Contextual Info: DMN601TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: SPICE MODEL: DMN601TK DMN601TK Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • Low On-Resistance: RDS ON TOP VIEW Low Gate Threshold Voltage A Low Input Capacitance Dim Min Max Typ D

Power MOSFET N-Channel sot-23

Abstract: MOSFET P-channel SOT-23 12 mosfet sot23 si2301 Fig.24 SI2302
Contextual Info: MCC TM Micro Commercial Components MOSFET MCC Part Number Power Rating DrainSource Voltage VDSS Gate Threshold Voltage Vth GS Drain Current IDMAX Static Drain-Source On Resistance RDS(ON)MAX (mW) (V) (V) (mA) (Ω) 2N7002 200 60 2.5 115 7.5 Package Type Polarity