1450MΩ Search Results

MOSFET

Contextual Info: ACE1550B P-Channel Enhancement Mode Field Effect Transistor Description The ACE1550B combines advanced trench MOSFET technology with a low resistance package to provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,

Contextual Info: シングル P チャンネル MOSFET ELM5E401PA-S •概要 ■特長 ELM5E401PA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-0.7A ・ Rds on = 620mΩ (Vgs=-4.5V) ・ Rds(on) = 860mΩ (Vgs=-2.5V)

AFP1013

Contextual Info: Single P-channel MOSFET ELM5E401PA-S •General description ■Features ELM5E401PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage

ELM5E401PA

Contextual Info: 单 P 沟道 MOSFET ELM5E401PA-S •概要 ■特点 ELM5E401PA-S 是 P 沟道低输入电容，低工作电 •Vds=-20V 压，低导通电阻的大电流 MOSFET。 ·Id=-0.7A ·Rds on = 620mΩ (Vgs=-4.5V) ·Rds(on) = 860mΩ (Vgs=-2.5V) ·Rds(on) = 1450mΩ (Vgs=-1.8V)

ASTX-11

Abstract: ABS06
Contextual Info: ABRAC O N P RO DUC T CATAL O G September 2013 Crystals Real-Time Clocks Oscillators Filters Precision Timing RF & Microwave Magnetics & Capacitors Engineered Solutions Oscillators ASG 7.0 x 5.0 x 2.0mm Precision Timing Solutions ABLNO 9.2 x 14.8 x 5.5 mm SMT

Contextual Info: Single P-channel MOSFET ELM5E401PA-S •General description ■Features ELM5E401PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-0.7A Rds(on) = 620mΩ (Vgs=-4.5V) Rds(on) = 860mΩ (Vgs=-2.5V)