Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    ON SEMICONDUCTOR DATE CODE D2PAK Search Results

    ON SEMICONDUCTOR DATE CODE D2PAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM9513ADIB
    		Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    CA3130AT/B
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130T
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3140T
    		Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS, MBCY8 PDF Buy

    ON SEMICONDUCTOR DATE CODE D2PAK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DIODE MARKING code GM

    Contextual Info: DLA20IM800PC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 20 A VF = 1.24 V Single Diode Part number DLA20IM800PC Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current


    Original     		dla20im800pco-263sine18060747and+220121026adiode marking code gm PDF

    418B-04

    Abstract: 418B 98AS AYWW marking code IC 98ASB42761B 418B-03 marking code AYWW On semiconductor date Code d2pak
    Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K DATE 03 SEP 2008 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04.


    Original     		418b-04418b-01418b-03418b+598asayww marking code ic98asb42761bmarking code aywwon semiconductor date code d2pak PDF

    D2Pak-5 Package

    Abstract: d2pak-5
    Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−5 CASE 936AC−01 ISSUE A DATE 10 SEP 2009 A SCALE 1:1 E L1 B A SEATING PLANE 0.10 A E/2 M B A M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD


    Original     		936ac-01936acd2pak-5 packaged2pak-5 PDF

    936AB

    Abstract: d2pak-7 On semiconductor date Code d2pak
    Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−7 SHORT LEAD CASE 936AB−01 ISSUE B DATE 08 SEP 2009 A 1 SCALE 1:1 E L1 B A 0.10 A E/2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD


    Original     		936ab-01936abd2pak-7on semiconductor date code d2pak PDF

    418af

    Abstract: marking codes 418AF
    Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK CASE 418AF-01 ISSUE A DATE 18 JUN 2007 SCALE 1:1 -TK OPTIONAL CHAMFER A TERMINAL 4 E U S B V H F 1 2 3 M J D 0.010 0.254 M T L P N G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.


    Original     		418af-01418afmarking codes 418af PDF

    418AB

    Abstract: 418AB-01
    Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 CASE 418AB−01 ISSUE A DATE 16 SEP 2009 A SCALE 1:1 B A E L1 SEATING PLANE 0.10 A B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD


    Original     		418ab-01418ab PDF

    semiconductor WL 431

    Abstract: d2pak-7
    Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−7 SHORT LEAD CASE 936AB−01 ISSUE O DATE 17 DEC 2003 SCALE 1:1 TERMINAL 8 A K NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. U E S B V M H L P G D N R DIM A


    Original     		936ab-01936absemiconductor wl 431d2pak-7 PDF

    Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 5 CASE 936A−02 ISSUE C DATE 21 SEP 2004 SCALE 1:1 −T− OPTIONAL CHAMFER A TERMINAL 6 E U S K B V H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. TAB CONTOUR OPTIONAL WITHIN DIMENSIONS A


    Original     		36a-02 PDF

    Contextual Info: DAA10EM1800PZ preliminary Avalanche Rectifier VRRM = 1800 V I FAV = 10 A VF = 1.14 V Single Diode Part number DAA10EM1800PZ Backside: anode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Avalanche rated ● Planar passivated chips


    Original     		daa10em1800pzo-26360747and20131108a PDF

    Contextual Info: DAA10EM1800PZ preliminary Avalanche Rectifier VRRM = 1800 V I FAV = 10 A VF = 1.14 V Single Diode Part number DAA10EM1800PZ Backside: anode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Avalanche rated ● Planar passivated chips


    Original     		daa10em1800pzo-26360747and20131108a PDF

    Contextual Info: DSA30C45PC preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 2x 15 A VF = 0.63 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C45PC Backside: cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 D2Pak


    Original     		dsa30c45pco-26360747and20131030a PDF

    Contextual Info: DSA30C45PC preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 2x 15 A VF = 0.63 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C45PC Backside: cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 D2Pak


    Original     		dsa30c45pco-26360747and20130724a PDF

    Contextual Info: DMA10P1600PZ Standard Rectifier VRRM = 2x 1600 V I FAV = 10 A VF = 1.21 V Phase leg Part number DMA10P1600PZ Backside: anode/cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		dma10p1600pzo-26360747and20130108b PDF

    DNA30EM2200PZ

    Abstract: DNA30E2200PZ
    Contextual Info: DNA30EM2200PZ High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30EM2200PZ Backside: anode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		dna30em2200pzo-26360747a60747and+220130325adna30e2200pz PDF

    DNA30E2200PZ

    Abstract: DNA30EM2200PZ
    Contextual Info: DNA30E2200PZ High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30E2200PZ Backside: anode 1 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		dna30e2200pzo-26360747and20130325a+1dna30em2200pz PDF

    Contextual Info: DMA10P1600PZ Standard Rectifier VRRM = 2x 1600 V I FAV = 10 A VF = 1.21 V Phase leg Part number DMA10P1600PZ Backside: anode/cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		dma10p1600pzo-26360747and20130108b PDF

    Contextual Info: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips


    Original     		dsep12-12azo-26360747and20131029a PDF

    Contextual Info: DAA10P1800PZ Avalanche Rectifier VRRM = 2x 1800 V I FAV = 10 A VF = 1.21 V Phase leg Part number DAA10P1800PZ Backside: anode 1 4 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Avalanche rated ● Planar passivated chips ● Very low leakage current


    Original     		daa10p1800pzo-26360747and20131114a PDF

    DNA30E2200PZ

    Abstract: DNA30EM2200PZ
    Contextual Info: DNA30E2200PZ High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30E2200PZ Backside: anode 1 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		dna30e2200pzo-26360747and20130325a+1dna30em2200pz PDF

    Contextual Info: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips


    Original     		dsep12-12azo-26360747and20131029a PDF

    DNA30EM2200PZ

    Contextual Info: DNA30EM2200PZ High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30EM2200PZ Backside: anode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		dna30em2200pzo-26360747a60747and+120130325a PDF

    Contextual Info: DAA10P1800PZ Avalanche Rectifier VRRM = 2x 1800 V I FAV = 10 A VF = 1.21 V Phase leg Part number DAA10P1800PZ Backside: anode 1 4 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Avalanche rated ● Planar passivated chips ● Very low leakage current


    Original     		daa10p1800pzo-26360747and20131114a PDF

    Contextual Info: DMA10P1600PZ Standard Rectifier VRRM = 2x 1600 V I FAV = 10 A VF = 1.21 V Phase leg Part number DMA10P1600PZ Backside: anode/cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips ● Very low leakage current


    Original     		dma10p1600pzo-26360747and20130108b PDF

    Contextual Info: DSP8-12AS Standard Rectifier VRRM = 2x 1200 V I FAV = 8A VF = 1.08 V Phase leg Part number DSP8-12AS Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


    Original     		dsp8-12aso-26360747and20130107b PDF