20131029A Search Results

Contextual Info: DSEP12-12BZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12BZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips

Contextual Info: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips

Contextual Info: DSEP12-12AZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12AZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips

Contextual Info: DSEI 12-12AZ Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 ns 1 3 Type DSEI 12-12AZ Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM

Contextual Info: VBE60-12A HiPerFRED VRRM = 1200 V I DAV = 60 A t rr = 60 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge Part number VBE60-12A Backside: isolated 3 2 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc

Contextual Info: DSEP12-12BZ HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12BZ Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-263 D2Pak-HV ● Planar passivated chips