OML Search Results

TDA7482

Abstract: 560PF MULTIWATT15
Contextual Info: SGS-TtiOMSON 7/ RfflDg^OmLitgTnEiORDDtgS TD A 7482 25W MONO CLASS-D AMPLIFIER • 25W OUTPUT POWER: R l = 8i2/4£2; THD = 10% ■ HIGH EFFICIENCY ■ WIDE SUPPLY VOLTAGE RANGE UP TO ±25V ■ SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION ■ ST-BY AND MUTE FEATURES

60mH inductor

Abstract: 58120 COIL77120 TDA7480
Contextual Info: 7/ SGS-TtiOMSON RfflDg^OmLitgTnEiORDDtgS TD A 7480 10W MONO CLASS-D AMPLIFIER • 10W OUTPUT POWER: R l = 8i2/4£2; THD = 10% ■ HIGH EFFICIENCY ■ NO HEATSINK ■ SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION ■ ST-BY AND MUTE FEATURES ■ SHORT CIRCUIT PROTECTION

Contextual Info: POUEREX INC 3RE D • 73^21 OO OMlTb 1 B P R X T - 3 3 - J S " m Ê Ê B Œ KD221205HB X Po w e rex, Inc., Hlllis Street, Youngw ood, Pennsylvania 15697 41 Z 925-7272 Powerex Europe, S.A., 4 2 8 Avenue G. Durand, B P 1 0 7 ,72003 Le Mans, France (4 3 )4 1 .1 4 .1 4

Contextual Info: JR ft REV. ZESSO LPS ‘ON B D ATE D ON W. M fi & DESCRIPTION NO. m m i CHK. DR. & M APPD. $ m APPD. ONIMVHQ ±0 . 3 K 9.0 5 =H N0TE2 +0.2 ±0 . 3 6 .2 2.5 NOTE! MAIN DESIGNATION -0 .1 4 - <f> 3 . 2 KEY JN2AS1 OML R SUFFIX 4#BkIE'§’ M O D I F I C A T I O N NUMBER

Contextual Info: 361-060-0040H 8EV A RELEASED PER ECR 7417 Ï .530 [13.46] .100 [2.54] TYP. .155 [3.94] .375 [9.53] 0.050 [01.27] 0.300 June 2006 - This drawing became the property of Winchester Electronics Corporation, Wallingford, CT. .040 [1.02] SQ. TYP. ¥ >r OMl •

Contextual Info: e x.“ — Y W 3 . 00 CL I P GAP 1.50 7.00 5 . 40 2.4 -V l- f l WIRE RANGE: 0.75 TO 2.00 SECTION Y-Y SECTION X-X 3 . 50 mm2. F OR S E A L E D A P P L I C A T I O N S MU S T B E U S E D . S i NGL E Wi R E S PR.E ONL Y - T 1 N NE D CUS T OME R DWG FOR R E F E R E H C E OMLT

LS204CB

Abstract: LS204CM LS204C ls204tb
Contextual Info: SGS-THOMSON LS 204 RfflOO^OmLtKgTT^QiDOi HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER • ■ ■ ■ ■ ■ SINGLE OR SPLIT SUPPLY OPERATION LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION LOW DISTORTION, LOW NOISE HIGH G AIN-BANDW IDTH PRODUCT HIGH CHANNEL SEPARATION

Contextual Info: jtà i M a n A M P <c o m p a n y E-Series 2-Way 0° Power Divider 950-1550 MHz ES-2-8 V3.00 Features • 2 W ay • 0° R-3 TOP VIEW NOTE : ?YS. MUMKF.Rffl DO NOT ÀPPEA.-Ì ON LIMIT. FOR REFERENCE OMLY. ÉC PINI 3 IS CASI1 i? HOUND Specifications @ 25°c

TSC 900 A

Abstract: 1DC1 AD9020J AD9060J
Contextual Info: 224 - • - 9 / 1 0 t -y b $ .y ¡ ¡ í h $ 2 M A - D 3 y lObit 9bit ttm m lObit lObit lO bit CLC920ACD LD C 1 0 4 9 J 3C T D C 1 0 Z 0 J 1C AD9020J , K AD9060J.K t - j TRW TRW Analog Devices Analog Devices C OML ! NEAR JälH Sls TFS TFS +25" C + 25'C +25’ C

Contextual Info: jtà i M a n A M P <c o m p a n y E-Series 2-Way 0° Power Divider 950-1550 MHz ES-2-8-75 V3.00 Features • 2 W ay • 0° R-3 TOP VIEW NOTE : ?YS. MUMKF.Rffl DO NOT ÀPPEA.-Ì ON LIMIT. FOR REFERENCE OMLY. ÉC PINI 3 IS CASI1 i? HOUND Specifications @ 25°c

intel i860

Contextual Info: ^ E D I EDI82236C Electronic Omlgra Inc. High Performance Synchronous Static RAM 32Kx36 Monolithic Synchronous Static RAM A § W A i i D N F @ M M ,fl@ [ Features The EDI82236C is a 1,179,648 bit synchronous Static RAM designed to support high performance cache memory

PS-43045

Abstract: UL E29179
Contextual Info: FEATURES AND SPECIFICATIONS Electrical Features und Benefits n n n Voltage: 250V Current: 5.OA max. Contact Resistance: 1 Omll max. 4 points of contact for optimum reliability Box-type spring contact for high normal force Locking tong secures terminal in housing

st 2n2907 to-18

Abstract: P008B 2N2904 2n2905 ST
Contextual Info: SGS-THOMSON RaDSMULKEin^OMlDei 2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N2904, 2N2905, 2N2906 and 2N2907 are si­ licon planar epitaxial PNP transistors in Jedec TO39 for 2N2904, 2N2905 and in Jedec TO-18 (for

Contextual Info: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN

M54700AP

Abstract: 54701AP 54701 16p4m M54701
Contextual Info: MITSUBISHI BIPOLAR DIGITAL ICs ] M54700AP, S/P, S-l/P, S-2 M54701AP, S/P, S-l/P, S-2 j 1 0 2 4 -B IT 2S 6-W 0R D BY 4-B IT FIELD PROORAMMABLE READ OMLY MEMORY I The e lectrical ch aracte ristics and p ro gra m m ing co n d itio n s o f the M 5 4 70 0P ,S

CA 358 AE

Contextual Info: [ = 7 S G S -T tiO M S O N DMDO^OmLKgTTMDigi TEA5640E MULTISTANDARD COLOR TV DECODER • FULLY AUTOMATIC MULTISTANDARD SWITCHING : THE CIRCUIT INCLUDES A SCANNING CONTROL SYSTEM USED FOR THE AUTOMATIC STANDARD RECOGNITION ■ NO CRYSTALS REQUIRED : ALL THE FRE­

Contextual Info: Style R, 1/2 R & R - Expanded Header 8478 Inverted Press-Fit 3-Row OMLLEO HOLS m i -MB' ii T W « e » PLATED THRU HOLE m ORDERING CODE * m , B jOO • T y p .c a i E x a m p le 10 ■ 8478 I 048 I 001 I 025 PREFIX — 10-PIN WITHOUT KEYING 12-PIN WITH KEYING

n551

Abstract: ATT220A BYW51 BYW51-200 BYW51F-200 T0220AB N409
Contextual Info: SCS-THOMSON RfflDte^OmLKeTTIRiOKlDtSS B Y W 5 1 F HIGH E FFIC IEN C Y FAST RECO VERY R EC TIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY

2N4033

Contextual Info: SGS-THOMSON RaDSMULKEin^OMlDei 2N4030-2N4031 2N4032-2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N4030, 2N4031, 2N4032, and 2N4033 are sili­ con planar epitaxial PNP transistors in Jedec TO39 metal case primarily intended for large signal, low

Contextual Info: SN54LVT273, SN74LVT273 3.3-V ABT OCTAL D-TYPE FLIP-FLOPS WITH CLEAR I SCBS130E - MAY 1992 - REVISED JULY 1995 State-of-the-Art Advanced BICMOS Technology ABT Design for 3.3-V Operation and Low-Static Power Dissipation Support Mixed-Mode Signal Operation (5-V

SFE10.52MJA10

Abstract: 8745H
Contextual Info: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

H107L

Abstract: W32 MARKING MC 68 H 705 da 128 H217H L117l
Contextual Info: MIL-M-38510/202B 25 May 1984 s u P E R S tu n rc MIL-M-38510/202A 24 May 1982 QUALIFICATION REQUIREMENT REMOVED M ILIT A R Y S P EC IFIC A T IO N M IC RO CIRCU ITS. D IG IT A L , 1024 » IT » IM * . » « P*0eR»HH»BLE READ-ONL t MEMORY P-RO M , MONOLITHIC SILIC O N _

Contextual Info: 83C198/80C198, 83C194/80C194 16-BIT CHMOS MICROCONTROLLER 83C198 — 8 Kbytes of Factory Mask-Programmed ROM 80C198 — ROMIess Automotive • Extended Automotive Temperature Range: -40°C to +125°C Ambient ■ 8-Bit External Bus ■ 232 Byte Register File