21424G
Abstract: voice recognition processor MSM6679 block diagram of speech recognition processor c2165 circuit diagram of voice recognition cut template DRAWING MSM6679-XXXJS ad338
Contextual Info: O K I Semiconductor MSM6679 Voice Recognition Processor ADVANCE INFORMATION D E S C R IP T IO N The MSM6679-XXXJS Voice Recognition Processor VRP is a single-chip processor for speaker-indepen dent voice recognition. The VRP contains its own vocabulary template in on-chip ROM. The on-chip ROM
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msm6679msm6679-xxxjsb72m24021424g+6voice recognition processorblock diagram of speech recognition processorc2165circuit diagram of voice recognitioncut template drawingad338
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MSM6679-XXXJS
Abstract: oki ribbon TRW speech MSM6679
Contextual Info: O K I Semiœnductor MSM6679 Voice Recognition Processor ADVANCE INFORMATION DESCRIPTION The MSM6679-XXXJS Voice Recognition Processor VRP is a single-chip processor for speaker-indepen dent voice recognition. The VRP contains its own vocabulary template in on-chip ROM. The on-chip ROM
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msm6679msm6679-xxxjsb7s454doki ribbon+1trw speech
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74H373
Abstract: 74H373 IC Latch MSM6679 VOICE RECORDER IC 9600 Digital Weighing Scale header connection diagram F73B f701 weighing controller voice recognition processor F501 MOS F802h
Contextual Info: MSM6679 Voice Recognition Processor SI/SD Voice Recognizer, Recorder/Player, and Speech Synthesizer Contents Description .2
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msm6679msm665474h37374h373 ic latch+7voice recorder ic 9600digital weighing scale header connection diagramf73bf701 weighing controllervoice recognition processorf501 mosf802h
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MSM5718B70
Abstract: MSM5718B7
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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j2g1033-17-64msm5718b7018rdram2m18rambus+625612nsrambus500mhz500mb/secrdramrambus500mb/secshp32-p-1125-0msm5718b7
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RDRAM SOP
Abstract: OKI D51 concurrent rdram MD5764802-53MC MD5764802-60MC MSM5718C50-53GS-K MSM5718C50-60GS-K SHP32-P-1125-0 ACTV m3 OKI D51 a24
Contextual Info: E2G1059-39-21 This version: Feb. 1999 MSM5718C50/MD5764802 Previous version: Nov. 1998 ¡ Semiconductor MSM5718C50/MD5764802 ¡ Semiconductor 18Mb 2M ¥ 9 & 64Mb (8M ¥ 8) Concurrent RDRAM DESCRIPTION The 18/64-Megabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed
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e2g1059-39-21msm5718c50/md576480218/64-megabitrdram sop+9oki d51concurrent rdrammd5764802-53mcmd5764802-60mcmsm5718c50-53gs-kmsm5718c50-60gs-kshp32-p-1125-0actv m3oki d51 a24
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45800
Contextual Info: SMART SMUUUUUUUUU01 Modular Technologies OBSOLETE Revision History • March 27, 2000 Datasheet obsoleted. • February 16, 2000 Modified module access speed on page 18. • December 8, 1999 Modified page 13 and functional diagram on page 2. • September 23, 1999
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RG25
Abstract: OKI RDRAM OKI RDRAM 18
Contextual Info: SMU128UBUAUUU SMU144UBUAUUU March 2, 2001 Revision History • March 2, 2001 Datasheet updated. • July 11, 2000 Corrected table on page 10. • June 12, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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smu128ubuauuusmu144ubuauuu128/144mbyte8mx16/18+4160-pinrg25oki rdramoki rdram 18
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OKI hitachi RDRAM
Contextual Info: SMUUUUUFUAU01 May 2, 2000 Revision History • May 2, 2000 Modified page 12. • April 24, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191
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smuuuuufuau01128/144mbyte8mx16/18184-pin+1oki hitachi rdram
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concurrent RDRAM 72 9
Abstract: MD5764802 MSM5718C50 18MSHP concurrent RDRAM 72
Contextual Info: J2G1059-39-21 ¡ 電子デバイス 作成：1999年 2月 前回作成：1998年11月 MSM5718C50/MD5764802 l MSM5718C50/MD5764802 18Mb（2Mx9）& 64Mb（8M×8）Concurrent RDRAM n 概要 18/64メガビットコンカレントRambus‘ DRAM（RDRAM）は2Mまたは8Mワード×8または9ビット構
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j2g1059-39-21msm5718c50/md576480218mb2m64mb8m+1018/64rambus600mhz600mb/s480mb/srsl1332242kbconcurrent rdram 72 9md5764802msm5718c5018mshpconcurrent rdram 72
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part number decoder toshiba dram
Abstract: MOSYS eDRAM LG concurrent RDRAM "embedded dram" nec ibm edram samsung dram sldram MoSys sram embedded mosys rdram samsung cdram
Contextual Info: Systems in Silicon Designing with DRAM AMD Embedded Processor Division, Designing with DRAM Overview Designing with DRAM Agenda Systems in Silicon • What are DRAMs? – The transistor level – How they differ from SRAM and FLASH • Bus Cycle Review – 16-bit
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16-bit32-bitam186ed50-ns+10part number decoder toshiba drammosys edramlg concurrent rdramembedded dram" necibm edramsamsung dramsldrammosys sram embeddedmosys rdramsamsung cdram
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IBM025161LG5D60
Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.
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mb81141621mb81141622mb81g8322mb81116421+13tc59r16082ns500mhztc59r0808ibm025161lg5d60gm72v16821md908km48s2020tc59r1809gm72v1682km4232w259q60km416s1120aibm025171lg5d-70km44s4020at
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NEC c317
Abstract: gm73v1892 mt 6252 Resistor Network Rpack 10K transistor NEC D 882 p CRA3A4E103J TP1017 eeprom programmer schematic 24c08 LPT22 m21cr
Contextual Info: TNETX4090 Design Manual SPWU023 October 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that
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tnetx4090spwu023nec c317gm73v1892+8mt 6252resistor network rpack 10ktransistor nec d 882 pcra3a4e103jtp1017eeprom programmer schematic 24c08lpt22m21cr
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IBM "embedded dram"
Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
Contextual Info: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of
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conn9564-mbitwoo00ee380+14class/ee380/wulf95xanalys00yabu99ibm "embedded dramm5m4v4169intel 1103 dramnintendo64ibm98toshiba fet databookdynamic memory controlermosys edram1t-srammosys
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manual FW82801BA motherboard
Abstract: intel chipset 845 motherboard repair circuit Intel 815 FW82815 motherboard review INTEL FW82801BA motherboard INTEL FW82801BA microtek inverter service manual National SG 250w audio amplifier circuit diagram lcd power board schematic hp 1502 rg82855gme Msi 533 845gv Motherboard
Contextual Info: NOTE: PLEASE ADJUST SPINE TO PROPER WIDTH Europe Intel Corporation UK Ltd. Pipers Way Swindon Wiltshire SN3 1RJ UK Phone: England (44) 1793 403 000 France (33) 1 4694 7171 Germany (49) 89 99143 0 Italy (39) 02 575 441 Israel (972) 2 589 7111 Netherlands (31) 20 659 1800
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usa/2004/10k/md/hpmanual fw82801ba motherboardintel chipset 845 motherboard repair circuitintel 815 fw82815 motherboard review+7intel fw82801ba motherboardintel fw82801bamicrotek inverter service manualnational sg 250w audio amplifier circuit diagramlcd power board schematic hp 1502rg82855gmemsi 533 845gv motherboard
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