OF TP 55B Search Results

FX609

Abstract: 2SK2437 2SJ362 2SJ417 FX203 HI-980
Contextual Info: SALIVO New Products Of New Package 5/6-pin XP Series :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power HOS FET series, and other device series.

Contextual Info: 5A Adjustable Linear Regulator Description The CS-5205A-1 linear regulator provides 5A at an adjustable volt­ age w ith an accuracy of ±1%. Two external resistors are u se d to set the o u tp u t voltage w ithin a 1.25V to 13V range. The regulator is inten d ed for use as

OF TP 55B

Abstract: CS218-55B
Contextual Info: Datasheet ^ V B - — • CS218-55B CS218-55D CS218-55M CS218-55N CS218-55P CS218-55PB tm iiir ii i a c m lC llllD U C lO r C lIF P i 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SILICON CONTROLLED RECTIFIER 55 AMP, 200 THRU 1200 VOLTS

BUK9212-55B

Contextual Info: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK7212-55B

Contextual Info: BUK7212-55B TrenchMOS standard level FET Rev. 01 — 23 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK7211-55B

Abstract: 03nl03 03nl06
Contextual Info: BUK7211-55B TrenchMOS standard level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

BUK9512-55B

Abstract: BUK9612-55B
Contextual Info: BUK95/9612-55B TrenchMOS logic level FET Rev. 01 — 28 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

PSMN005-55B

Abstract: PSMN005-55P
Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance

Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance

buk9l06-55b

Abstract: MBL370 buk9l06
Contextual Info: BUK9L06-55B TrenchMOS logic level FET Rev. 01 — 13 August 2002 Product data M3D794 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low

BUK9Y19-55B

Abstract: BUK9Y19-55B Rev. 02 BUK9Y19-55B,115
Contextual Info: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK9Y40-55B

Abstract: 03np80
Contextual Info: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

Contextual Info: BUK9212-55B TrenchMOS logic level FET Rev. 01 — 20 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

BUK754R0-55B

Abstract: BUK764R0-55B
Contextual Info: BUK75/764R0-55B TrenchMOS standard level FET Rev. 01 — 28 March 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.

7606

Abstract: 7606-55B BUK7506-55B BUK7606-55B
Contextual Info: BUK75/7606-55B TrenchMOS standard level FET Rev. 01 — 31 March 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

55b diode

Abstract: 7607-55B BUK7507-55B BUK7607-55B
Contextual Info: BUK75/7607-55B TrenchMOS standard level FET Rev. 01 — 15 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK7511-55B

Abstract: BUK7611-55B BUK7E11-55B buk7611
Contextual Info: BUK75/76/7E11-55B TrenchMOS standard level FET Rev. 02 — 11 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

D 795 A

Contextual Info: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 02 — 10 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low

Contextual Info: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 01 — 13 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low

BUK954R2-55B

Abstract: BUK964R2-55B
Contextual Info: BUK95/964R2-55B TrenchMOS logic level FET Rev. 01 — 29 March 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.

BUK9E08-55b

Abstract: BUK9508-55B BUK9608-55B
Contextual Info: BUK95/96/9E08-55B TrenchMOS logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

Contextual Info: BUK95/964R2-55B TrenchMOS logic level FET Rev. 02 — 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;

BUK9C10-55BIT

Contextual Info: D2 PA K-7 BUK9C10-55BIT N-channel TrenchPLUS logic level FET 6 August 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a D2PAK-7 package using TrenchPLUS MOSFET technology. The device includes TrenchPLUS current sensing and integrated diodes