OF IRF9540N Search Results

IRFP460Z

Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
Contextual Info: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB

Contextual Info: IRF9540NS/L l l l l l l l Advanced Process Technology Surface Mount IRF9540S Low-profile through-hole (IRF9540L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of

IRF3205 equivalent

Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Contextual Info: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test

IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Contextual Info: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES

IRF734

Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Contextual Info: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

IRF9540NS

Abstract: IRF9540N IRF9540NL IRF9540L
Contextual Info: PD - 91483E IRF9540NS/L Advanced Process Technology Surface Mount IRF9540NS l Low-profile through-hole (IRF9540NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω

Contextual Info: PD - 91483E IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540NS l Low-profile through-hole (IRF9540NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.117Ω

IRF9540NS

Abstract: IRF9540L IRF9540NL
Contextual Info: PD - 91483E IRF9540NS/L Advanced Process Technology Surface Mount IRF9540NS l Low-profile through-hole (IRF9540NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω

IRF9540L

Abstract: IRF9540S
Contextual Info: PD - 91483D IRF9540NS/L Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω

IRF9540N

Abstract: of irf9540n irf9540n to220ab ir
Contextual Info: PD 9.1437A International l R Rectifier IRF9540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Vqss = -100V Ftas on = 0 .1 1 7 Q

Contextual Info: PD -9.1483 International IQR Rectifier IRF9540NS PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V d s s = -1 0 0 V

RF9540

Contextual Info: PD -91483C International Iö R Rectifier IRF9540NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount I RF9540S • Low-profile through-hole (IRF9540L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated

IRF9540NSPBF

Contextual Info: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L

Contextual Info: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L

100v 23A P-Channel MOSFET

Abstract: IRF9540L IRF9540S
Contextual Info: PD - 91483C IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.117Ω

IRF9540L

Abstract: IRF9540S
Contextual Info: PD - 91483C IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.117Ω

Contextual Info: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L

IRF9540N

Contextual Info: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L

Contextual Info: PD 9.1437 International lö R Rectifier IRF9540N PRELIMINARY H E X F E T Pow er M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V DSS = - 1 0 0 V

IRF9540N

Abstract: IRF9540NS
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1483A IRF9540NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description

IRF9540L

Abstract: IRF9540NS IRF9540S
Contextual Info: 2002-03-01 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-164-03 IRF9540NS HEXFET D2Pak PD - 91483C IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540S

IRF9540N

Abstract: datasheet of irf9540n IRF9540n datasheet 7A, 100v fast recovery diode irf9540n to220ab ir D 92 M - 02 DIODE
Contextual Info: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

IRF9540N

Abstract: 100v 23A P-Channel MOSFET SEC IRF9540N datasheet of irf9540n IRF9540n datasheet irf9540n to220ab ir
Contextual Info: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier