OF IGBT Search Results

maximum current rating of diodes

Abstract: aj7v Emitter Turn-Off thyristor IXYS SEMICONDUCTOR
Contextual Info: Symbols and Terms Input capacitance of IGBT Input capacitance of MOSFET Reverse transfer capacitance of IGBT Output capacitance Reverse transfer capacitance of MOSFET di/dt Rate of change of current dv/dt p Critical rate of rise of forward voltage Turn-off energy per pulse at specified junction

73E05

Abstract: 73E-05 abb inverter protection single phase igbt based inverter 200 amps circuit 97E-05
Contextual Info: Application Note Paralleling of IGBT modules Paralleling of modules or paralleling of inverters becomes necessary, if a desired inverter rating or output current can not be achieved with a single IGBT module as switch. From an economic point of view paralleling of modules

MOSFET 4407

Abstract: ir2110 class d amp IRFP450 inverter irfp460 ir2110 Class d IR2110 inverter ic 3524 application ir2110 with calculations for inverter BJT with V-I characteristics INT-983 Inverter IR2110
Contextual Info: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1

IRF9460

Abstract: ir2110 spice IR2110 IGBT DRIVER irfp460 ir2110 INT-983 IRGP50S ir2110 with calculations for 3 phase inverter IR2121 irfp450 mosfet IRCPC50F
Contextual Info: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1

IGBT parallel

Abstract: advantage and disadvantage of igbt Measurement of stray inductance for IGBT Measurement of the circuit stray inductance L eupec igbt driver AN2004-06 parallel circuits eupec module igbt IGBT3 infineon EUPEC
Contextual Info: Application Note Date: 27.09.2004 AN-Number: AN2004-06 Page 1 Department: SM-AE Paralleling of EconoPACKTM+ 1. EconoPACKTM+ Design 2. Paralleling of IGBT3 and EmCon HE diodes 3. Methods of paralleling EconoPACKTM+ 4. Dynamic and static current sharing of parallel circuits

igbt types

Abstract: IGBT snubber for inductive load igbt igbt in smps l series IGBT design drive circuit of IGBT
Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are synergistically melded with the voltagecontrolled properties of MOSFETs. Sum mary of various IGBT types. Table 1: Standard devices (page 8)

igbt 6.5kv

Abstract: 6.5kV IGBT FZ600R65KF1 AN2002-05 1kA IGBT
Contextual Info: APPLICATION NOTE Date: 02-07-05 Page 1 of 3 AN-Number: AN2002-05 Short Circuit Operation of 6.5kV IGBTs This application note presents aspects for driving IGBTs, which allow a safe short circuit operation of 6.5kV IGBTs. The following picture shows a short circuit turn-off of a FZ600R65KF1 with and without a clamping of

600V igbt dc to dc buck converter

Abstract: 400V igbt dc to dc buck converter STGE25N100 600V 30A igbt dc to dc buck converter stgh20 AN476 IGBT Driver ic and 20khz resonant converter weight loss AN521
Contextual Info: APPLICATION NOTE IGBTS IN RESONANT CONVERTERS by R. Letor, S. Musumeci, F. Frisina ABSTRACT 2. RESONANT TOPOLOGIES The aim of this paper is to give help to the designers of resonant converters in the selection of IGBTs for use in their circuits. A method of characterizing

SKM50GB121D

Abstract: BSM50GB120DN2 lisn 2MBI50F-120 2MBI50L-120 asymmetrical igbt BSM50G*120DN2 2MBI50L120 igbt simulation igbt 3 KA
Contextual Info: Experimental and Simulative Investigations of Conducted EMI Performance of IGBTs for 5 - 10 kVA Converters Abstract Power switches with high dv/dt and di/dt rates like IGBTs are the source of EMI. The paper presents investigations of conducted EMI on IGBTs in different test circuits. Moreover,

STGE25N100

Abstract: 600V 30A igbt dc to dc buck converter 400V igbt dc to dc buck converter 600V igbt dc to dc buck converter AN476 IGBT application note AN521 STGH20N stgh20 transistor zc
Contextual Info: APPLICATION NOTE IGBTS IN RESONANT CONVERTERS by R. Letor, S. Musumeci, F. Frisina ABSTRACT 2. RESONANT TOPOLOGIES The aim of this paper is to give help to the designers of resonant converters in the selection of IGBTs for use in their circuits. A method of characterizing

Contextual Info: HGT1S20N60C3S9A Data Sheet August 2003 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G12N60B3

Abstract: HGTG12N60B3 HGTG12N60B3D LD26
Contextual Info: HGTG12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

maximum current rating of diodes

Contextual Info: Symbols and Terms Cc_ K. Rg. •* u ^WB •m i pc w PB fVMl 3-fitfui1 rT ^ ihck ^«UA ^HUC RHWK fVhJS ^VhlU Te *» \ sm L , T VJ Input capacitance of IGBT Input capacitance of MOSFET Reverse transfer capacitance of IGBT Output capacitance Reverse transfer capacitance of MOSFET

diode js

Abstract: OF IGBT JS diode JS 9 diode DIODE JS 8 free-wheeling diode
Contextual Info: SKiM 4. Captions of datasheet figures Fig. Description 1 Typical output characteristic, including resistance from terminal to chip RCC´-EE´. Collector –emitter voltage VCE as function of output current IC for given VGE and Tj 2 Maximum rated current IC of one IGBT element as function of the heat sink

H9207

Abstract: high side IGBT driver optocoupler infineon igbt reliability "Optical Couplers" 600v 75a igbt transformer driver high side IGBT driver High Voltage Busbar IGBT application notes igbt module
Contextual Info: Product Information May 2008 MIPAQ serve The new M I P A Q ™ family of Infineon is offering Modules Integrating Power, Application and Quality. One of the first family members is MIPAQ™serve which integrates an IGBT sixpack plus a full set of drivers and temperature measurement on top of the IGBT

shockley diode

Abstract: shockley diode application diode shockley shockley shockley diode datasheet inverter circuits explained IGBT inverter calculation mosfet triggering circuit for inverter Semiconductor Group igbt shockley diode high voltage and high current
Contextual Info: The Reverse Behavior of the NPT-IGBT in its On-State 1 Reverse States of the IGBT in Inverter Circuits Causes for Reverse States The use of the IGBT in inverter circuits does not come without its problems. During the switching cycle the signs of current and voltage applied to the switching device change

ixys

Contextual Info: IXYS Power Semiconductors for the World of Power Electronics IXYS Corporation is dedicated to providing advanced power semiconductors to meet the demanding requirements of power electronic applications. Our product portfolio of Power MOSFETs, IGBTs, SCHOTTKYs, FREDs, Thyristors,

SKIIP 32 nab 12 t 49

Abstract: SKiiP 33 NEC 125 To skiip 33 ups 063 semikron skiip 24 nab 125 t 12 thyristor firing circuit SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 20 nab 12 I T 38 Semikron skiip 31 nab 12 semikron skiip 81 AN 15 T semikron skiip 32 nab 12
Contextual Info: MiniSKiiP Do it your way MiniSKiiP Technology • Pressure contact of all power and auxiliary connections instead of soldered joints. ■ Integration of latest chip technology: • Low switching loss, 600V or 1200V, homogeneous NPT IGBTs with antiparallel

electric motor

Abstract: power window motor General Electric shunt resistor current motor motor power window
Contextual Info: General Application Note for the PWR Family of Power Resistors Power Resistors from the PWR Series are used in a variety of different configurations of power supplies. The main functions are either to absorb the inrush current caused by the switching action of a power device such as a MOSFET or IGBT or as a shunt, which is

MITSUBISHI IGBT SPICE

Abstract: IGBT 60A spice model n mosfet depletion pspice model parameters igbt 1200v 600a igbt spice Infineon power diffusion process IGBT Pspice TRANSISTOR 1pz igbt spice model bjt 100a
Contextual Info: Parameter Extraction for a Physics-Based Circuit Simulator IGBT Model X. Kang, E. Santi, J.L. Hudgins, P.R. Palmer* and J.F. Donlon* Department of Electrical Engineering University of South Carolina Columbia, SC 29208, USA kang@sc.edu *Department of Engineering

diode 12A3

Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device

IGBT MODULES

Abstract: westcode westcode igbt
Contextual Info: IGBT Modules Page 1 of 5 WTM100BAE12 WTM100CCE12 WTM100CDE12 www.westcode.com WESTCODE Issue 1 : 03/01 IGBT Modules Page 2 of 5 WTM100BAE12 WTM100CCE12 WTM100CDE12 www.westcode.com WESTCODE Issue 1 : 03/01 IGBT Modules Page 3 of 5 WTM100BAE12 WTM100CCE12 WTM100CDE12

g20n60

Abstract: HGT1S20N60C3S9A HGT1S20N60C3S G20N60C3 HGTG20N60C3 HGTP20N60C3 TA49178 TB334
Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

IGBT snubber for inductive load

Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are synergistically melded with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device