OF ALL 74 IC SERIES Search Results

2SC3140

Abstract: L0801
Contextual Info: CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NEL080120-28 NEL080220-28 NEL080525-28 NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION HIGH LIN EA R PO W ER NEC's N EL0800 series of NPN epitaxial UHF pow er transis­ tors is designed fo r linear operation in the 500 to 1000 MHz

MRF947T1 equivalent

Abstract: mrf9411 285-2 Motorola 581 "Small Signal Amplifiers" MRF9411L MRF947T1 datasheet MRF9411LT1 177.138 MOTOROLA 934
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

MRF947T1 equivalent

Abstract: 177.138 Motorola 581 MMBR941LT1 Datasheet of all 74 ic series MRF9411L MMBR941 MMBR941BLT1 MRF9411 MRF9411LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors MMBR941 MRF947 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series

MRF941

Abstract: MRF947RT3 mrf9411 MRF9411BLT1 MRF947T1 equivalent MRF947R MRF9411L MRF947T1 MMBR941 MMBR941BLT1
Contextual Info: MOTOROLA Order this document by MMBR941LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR941 NPN Silicon MRF941 Low Noise, High-Frequency MRF947 Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

MRF941

Abstract: mrf9411
Contextual Info: MOTOROLA Order this document by MMBR941LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR941 NPN Silicon MRF941 Low Noise, High-Frequency MRF947 Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

bt 824

Abstract: PLRA100S 17655
Contextual Info: SERIES PLR - Lowest Profile Series 0. 300” Isolated Regulated up to 5 Watts DC-DC Converters Wide Input Range up to 3.33:1 ¡ S Í * 2 * All Units Shielded SERIES PLR SINGLE OUTPUT I N o w S ta n d a rd PICO R w r FEATURES: NUMBER • Voltage regulation over input of

Contextual Info: SERIES AV/SMV -54a ht. .500 ht.up to 1000 V D C output SURFACE MOUNT and PLUG-IN 1.25 watt output at 70° ambient Ultra-miniature size 0.500° height, 5.0 gram s weight, .125 cubic inches volume 4 input voltage ranges 5,12, 24 and 28 V D C 100 megohm @ 1500 V D C input/output isolation

Contextual Info: EHA2600 SERIES é U u sÊ m EHA2600 Series HIGH PERFORMANCE ANALOG INTEGRATEDClflCUfTS F e a tu r e s G en era l D e sc r ip tio n • • • • • • • • Elantec’s EHA2600 Series of high performance op amps is de­ signed to offer designers high-speed amplifiers without sacrific­

Contextual Info: DTA114W series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 10kΩ 4.7kΩ EMT3 UMT3 -50V l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

MRF951

Contextual Info: MOTOROLA Order this document by MMBR951ALT1/D SEMICONDUCTOR TECHNICAL DATA MMBR951 The RF Line NPN Silicon MRF951 Low Noise, High-Frequency MRF957 Transistors MRF9511 Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

2SC1253

Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for

Contextual Info: HifiM PERFORMANCE ANAlJOS INTEGRATED CIRCUITS EHA2500 Series BUffk SlCW R lt€ Op€V(ltlOTl(ll A.Ttlpllfl€Y F e a tu r e s G en era l D e sc r ip tio n • • • • • • E lan tec’s EHA2500 Series of m onolithic high slew rate am plifi­ ers is designed and optim ized for h igh slew rates and wide bandw idths. T hree different types are offered. T he EH A250X series

GP144

Contextual Info: GEC P L E S S E Y Is e m i c o n d u c t o r s MARCH 1992 ! 2462 - 3.1 CLA70000 SERIES HIGH DENSITY CMOS GATE ARRAYS S u persedes Jan uary 1992 edition R ecent advances in CMOS processing technology and im p ro vem e nts in design a rch ite ctu re have led to the

MC33172P equivalent

Abstract: MC33174P motorola operational amplifier mc33172 Nippon capacitors
Contextual Info: Order this document by MC33171/D MC33171 MC33172 MC33174 Low Power, Single Supply Operational Amplifiers DUAL Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These

218in

Abstract: 4010N 4710n
Contextual Info: — _ UHF Yagis Heavy-Duty PLC Series O ur PLC series heavy-duty Yagis are factory assem bled and adjusted for easy installation. They feature heavy-wall tubing elements and large rugged machined aluminum blocks for the boom-to-elem ent junctions. Six and ten elem ent models are available.

MMBR951ALT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

Contextual Info: NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http://onsemi.com • LCD Control Board • High Speed Switching • High Voltage Switching

Contextual Info: NSM80100MT1G PNP Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http://onsemi.com • LCD Control Board • High Speed Switching • High Voltage Switching

MARKING 3NP

Abstract: NSM80101MT1G
Contextual Info: NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com Typical Applications • LCD Control Board • High Speed Switching • High Voltage Switching

NE02135

Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION

AM460-2

Abstract: AM-450-2
Contextual Info: D lO T iB L PRODUCT DATA SHEET AM-450, AM-460 Series Wide Bandwidth, Fast-Settling Monolithic Operational _Amplifiers FEATURES • 120V/Microsecond slew rate •1 0 0 MHz Gain bandwidth • 200 Nanoseconds settling to 0.1% • 300 Megohm input impedance

chn 621

Abstract: CHN 841
Contextual Info: :9 |N a FAST CMOS IDT54/74FCT841AT/BT/CT/DT BUS I NTERFACE LATCHES Iw Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • C o m m o n features: The FC T8xxT series is built using an advanced dual metal C M O S technology. The FC T8xxT bus interface latches are designed to elim i­

ic 8259

Abstract: marking AF SOT mrf9511 sps 6580
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.