OD S2A Search Results

Contextual Info: HUF76107D3, HUF76107D3S Semiconductor Data Sheet 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF76645P3, HUF76645S3S Semiconductor July 1999 Data Sheet File Num ber 4716.2 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • U ltra Low O n-R e sistan ce • rDS ON = 0.014£i, v g s = 1°v

FT3055LE

Contextual Info: RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET July 1998 Features Description • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum

Contextual Info: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Semiconductor Data Sheet July 1999 14A, 50 V, 0.100 Ohm, N-Channel Power MOSFETs File Number 2268.5 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L S e m ico n d ucto r Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V • r DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and

Contextual Info: S-N 0 S SYSTEMS INC IDE D | 7^32^0^ 00007SÖ S I PF355-01 CCD LINE SENSOR # 5 ,0 0 0 Bits Photo-element •7 i« m Pitch •DESCRIPTION The SEA7551H is a 5,000 bits CCD line sensor which has a CCD analog shift register for reading image signals. It is possible to read a manuscript of A3 size 29.6cm x 42cm by 16 line/mm.

N9321

Abstract: F7613 TA7613
Contextual Info: ? *3 2 £ HUF76137P3, HUF76137S3, HUF76137S3S 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs June 1998 | Features Description w • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the

TPG1212

Abstract: PIN diode Pspice model
Contextual Info: RF3V49092, RF3S49092, RF3S49092SM S e m iconductor November 1998 Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFETs These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

Contextual Info: ASSESS? RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022É1, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A,20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes

Contextual Info: Low Voltage, CMOS Multimedia Switch ADG790 FEATURES Single-chip audio/video/data switching solution Wide bandwidth section Rail-to-rail signal switching capability Compliant with full speed USB 2.0 signaling 3.6 V p-p Compliant with high speed USB 2.0 signaling (400 mV p-p)

24LC64

Abstract: ADG790 CY7C68013-56LFC 21T7
Contextual Info: Low Voltage, CMOS Multimedia Switch ADG790 Single-chip audio/video/data switching solution Wide bandwidth section Rail-to-rail signal switching capability Compliant with full speed USB 2.0 signaling 3.6 V p-p Compliant with high speed USB 2.0 signaling (400 mV p-p)

Contextual Info: RFD15N06LE, RFD15N06LESM Semiconductor D ata S h eet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

Contextual Info: PB Series Miniature Momentary Pushbutton Switches CONTACT RATINGS Q Power models - 6 Amps at 125 VAC, 3 Amps at 250 VAC or 7 Amps at 30 VDC resistive loads . See page E22 for other contact ratings. B Dry Circuit models - 0.4 Volt-Amps (VA) max. at 20 V max. (AC or DC).

Contextual Info: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Semiconductor April 1999 Data Sheet 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs File Num ber 3948.4 Features • 0.30A, 60V These are intelligent monolithic power circuits which

F40N10LE

Abstract: 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n
Contextual Info: ÜB H A R R I S RFG40N10LE, RFP40N10LE, vmj se», co. »uc, o• RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JE D EC S TYLE TO -247 • 4 0 A ,1 0 0 V

transistors 1UW

Contextual Info: RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits gives optimum

TA49018

Abstract: RF1S50N06 F1S50N06 123E-3
Contextual Info: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

2301B

Contextual Info: TOSHIBA TENTATIVE TCD2552D TOSHIBA CCD IMAGE SENSOR tr • CCD Charge Coupled Device n?^ ?n ar mmr wmr ■■r' The TCD2552D is a high sensitive and low dark current 5340x3 elements linear image sensor. The sensor can be used for image scanner. The device

BA658

Contextual Info: Read/write amplifier BA6589K The BA6589K 1C incorporates read, write, and erase circuits for use with 3 in., 3.5 in., and 5 in. floppy disk drives. Dimensions U n its: mm BA6589K (QFP44) 14.0±0.3 It can be operated at either 5 V or 12 V. It has a power save mode which ensures

Contextual Info: ANALOG DEVICES □ lc 2m o s 4/8 Channel Analog Multiplexers ADG508A/ADG509A 1.1 Scope. This specification covers the detail requirements of CMOS monolithic analog multiplexers ADG508A and ADG509A with 8 channels and dual 4 channels, respectively. These multiplexers also feature high

Contextual Info: • o a ib B O D o o m 3 f l ? A N A LO G D EV ICES □ ANALOG D E V I C E S INC « a n a LC2M0S 4/8 Channel Analog Multiplexers bSE I ADG508A/ADG509A 1.1 Scope. This specification covers the detail requirements of CMOS monolithic analog multiplexers ADG508A and

262E-9

Contextual Info: J W S Semiconductor RFG40N10LE, RFP40N10LE, RF1S40N10LESM I Data Sheet April 1999 40A, 100V, 0.040 Ohm, ESD Protected, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

Contextual Info: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,