OC 76 GERMANIUM TRANSISTOR Search Results

NKT275

Abstract: OC75 OC81DN OC72 OC78 NKT213 germanium transistors PNP oc75 oc76 ACY35 nkt 275
Contextual Info: PNP Germanium Transistors PNP Germanium A F Alloy Transistors in T 0 1 metal case Common Characteristics fr Vc£ Cob <VC B = 6 V , \E = 0 •6 V , lc = 1mA) 1 MHz Characteristics at T amb = 2 5 °C Maximum ratings Type Low Noise Types 40 pF B V C fO V B V CSO

START620

Abstract: 60Ghz 60GHz transistor START620TR 500MHz-5GHz
Contextual Info: START620 NPN SiGe RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family

OC 76 germanium transistor

Abstract: LNA transistor 1.8GHz
Contextual Info: START620 NPN SiGe RF Transistor TARGET DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family that provide market with the state of the art of RF silicon process. It uses ST’s Silicon Germanium technology. This technology offers ft’s of up to 45GHz

START620

Abstract: 60Ghz 60GHz transistor START620TR
Contextual Info: START620 NPN SiGe RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

2N4241

Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

MP21E

Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Contextual Info: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR

2N5508

Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

OC 74 germanium transistor

Abstract: 27s21 OC 76 germanium transistor
Contextual Info: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005-BD April 2007 - Rev 19-Apr-07 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010

pHEMT transistor MTBF

Abstract: L1005 84-1LMI
Contextual Info: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005 May 2006 - Rev 10-May-06 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

DM6030HK

Abstract: TS3332LD XL1005 XL1005-BD-000V XL1005-BD-000W XL1005-BD-EV1
Contextual Info: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005-BD April 2007 - Rev 19-Apr-07 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010

OC 74 germanium transistor

Contextual Info: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883

SA2713

Abstract: MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

OC 74 germanium transistor

Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

BC138 TRANSISTOR

Abstract: 2N4043 ME2001 2N1020 2N3523 2N4042 2N4241 BC138 bc143 TLO 61
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BC138

Abstract: 2N3520 ST8014 2CY38 BD117 OC74 2N3523 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

MP2060-4

Abstract: MP2062-4 MP2063-4 L17D MA7809
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

P1016

Abstract: DM6030HK XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic
Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD February 2010 - Rev 15-Feb-10 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD December 2009 - Rev 04-Dec-09 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The