OBO SURGE Search Results

PM20CHA060

Abstract: 2 anode igbt inverter circuit diagram 3 phase inverters circuit diagram igbt 3 phase inverters circuit diagram igbt PM20CHA060 BP107 T-57-aa PM20CHA06
Contextual Info: P OIilEREX ¿ ^ I k J M INC E V S IE T> m 72 i4 b 2 1 DDDSb5f l ObO * P R X P M 20C H A 060 lE A -7= 5 7 - 2 5 Powerex, inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln t G llim O C P '^ - 3 M 0 d u l 0 S Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j ^ re e p ^ a s e

Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED SMD Pb Lead-Free Parts LG-008WK-DT-A03 DATA SHEET DOC. NO : QW0905-LG-008WK-DT-A03 REV. : A DATE : 23 - Apr. - 2012 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/13

Contextual Info: • Micmsemi m m Chatsworth, CA m MB2505 THRU MB2510 Prog ress P ow ered b y Technology 9261 Owensmouth Ave, Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • 25 Amp Single Phase Bridge Rectifier 50 to 1000 Volts Mounting Hole For #8 Screw

Contextual Info: DISCRETE SEMICONDUCTORS BYX120G EHT car ignition diode Preliminary specification File under Discrete Semiconductors, SC01 October 1991 Philips Semiconductors PHILIPS ^ 5 3 ^ 3 1 0035147 Preliminary specification Philips Semiconductors BYX120G EHT car ignition diode

Contextual Info: TO SHIBA 3BZ41 ,3GZ41,3JZ41,3NZ41 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 3BZ41, 3GZ41, 3JZ41, 3NZ41 Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. • • • Average Forward Current : Ip AV = 3.0A Repetitive Peak Reverse Voltage : V rr m = 100 —1000 V

ILOIf

Abstract: MIG20J806E MIG20J806EA mig20j
Contextual Info: T O SH IB A TENTATIVE MIG20J806E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J806E, MIG20J806EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Integrates Inverter, Converter Power Circuits and Thermistor in One Package. Output Inverter Stage

diode E155

Abstract: mig20j
Contextual Info: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.

ST-2124

Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

MA12 transistor

Contextual Info: WILLAS FM120-M+ MMBT5401LT1 THRU High MOUNT Voltage Transistor FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

power BJT 1000 volt vce

Abstract: Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: SC O T T SM L L , M is iïiiïr . FEATURES • • • • ECONOMICAL SERIES AVAILABLE IN BOTH UNIDIRECTIONAL AND BIDIRECTIONAL CONSTRUCTION 6.8 TO 200 VOLTS AVAILABLE GOO WATTS PEAK PULSE POWER DISSIPATION P6KE6.8 thru P6KE200A TRANSIENT ABSORPTION MAXIMUM RATINGS

Contextual Info: W h a t HEW LETT PACKARD rnLtim 155 Mbit/s Logic Interface Laser Transmitter for OC3/STM1 Technical Data XMT5360-155 XMT5160-155 Features Description • Full Compliance to SONET/ SDH STM1/OC1-3 The XMT5360-155 and XMT5160-155 laser transmitters are high performance uncooled optical

marking AT0

Contextual Info: WILLAS FM120-M+ THRU MMBT3906LT1 General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY Transistors BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNP Silicon

Contextual Info: WILLAS General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ THRU MMBT3906TT1 FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

CR2AM

Abstract: prx scr 133 CR2AM-12
Contextual Info: m ü i B Œ CR2AM K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 L G â d -IT IO U n t Phase Control SCR 2 Amperes/400-600 Volts OUTLINE DRAWING Description: The Powerex CR2AM Lead-mount Phase Control SCRs are glass passivated thyristors for use in low

40WT1

Contextual Info: WILLAS FM120-M+ BC807-40WT1 THRU FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: WILLAS FM120-M+ BCW66GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features NPN Silicon • Batch process design, excellent power dissipation offers better

Contextual Info: WILLAS FM120-M+ THRU MMBT2907AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V General Purpose Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

mbt3904lt1

Abstract: MBT3904L marking code 1AM MBT3904LT
Contextual Info: WILLAS FM120-M+ MMBT3904LT1 THRU General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse

E2026

Contextual Info: WILLAS FM120-M+ BCW68GLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNPbetter Silicon

Contextual Info: WILLAS FM120-M+ BC:$LT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features NPN Silicon process design, excellent power dissipation offers • Batch better reverse leakage current and thermal resistance.

Contextual Info: WILLAS FM120-M+ THRU BC817-40WT1 Purpose FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

MBT3904WT1

Contextual Info: NPN MMBT3904WT1 FM120-M+ THRU PNP FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V MMBT3906WT1 Purpose WILLAS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: WILLAS FM120-M+ THRU MMBT2222AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.