O 3 MG Search Results

Contextual Info: co o 0 CJ1 NÏ ^ o0 > ln 01 0 ~ö cn X X X X X X X to 5 II H- H- Ho o N O s o 70 II 70 m o 3 o Ul g & J O /) z tn o iS S \ Z O Ü U iE o o o i | £ F "ö £ m SQ 3m BB BB = >3 VJ 70 o m < o o > O N> > > to CD O O O 3 o cz • o o‘ I T o (D mg 3 > -I o O

Contextual Info: vi PU s* M a n; Mg I V, 6 H» 3* *^ o I o o c n i tft o o o > o F Ff È» a- @ li p a> 3" Ä 3 ^ . a» E g ? S- 9<D. 3 «2. tn ? 8 %• ì! i

Contextual Info: 44.56 1- 0.2 Kodierung / coding 1- 0.1 I f ; mg 1 5 x l2 3 4 l = [ 3 8 l 53.36 max. 103-90165 C/2 48M a,b,c Lot / dip so ld e r 3mm GK II / class 2 o Standard Kontakt / Standard Contact o o o o o o o o o o o o o o o o C o o o o o o o o o o o o o o o o b a

9601h

Contextual Info: •1.541 [39.14]. -11 4 - 4 0 U N C -2 B - 1 . 3 1 2 + 0 . 0 0 5 [33 .3 2 + 0 .1 3 ]- 0 .9 9 4 ± 0 . 0 0 5 [2 5 .2 5 + 0 .1 3 ] o !o 3o 4o 5o 6o 7o " o o o o o o o o 10 II 12 li 14 15 // JJ 0 .3 2 9 + 0 .0 0 5 8 .3 6 + 0 .1 3 ] U 0.250 [6.35] 0.22 5 [5.72]

120x32

Abstract: 16D10
Contextual Info: MGL S -12032A 120 X 32 DOTS 75.0±0.5 0.5 7 4 .0 Í0 .3 2.5 70.0+0.3 5.0 1 3 .5 60.0±0.3 0.425 0.05 + 0.60 ro O +1 lT) 0.05 + + + + + + + + + - + Kh- ro Ó -H LQ CO CM DISPLAY 120 X 32 DOTS =56.95 X 20.75 + + + )15o -|gO + + + + - + - + + + + + + + o o o o o o^o

Contextual Info: TOSHIBA -CDISCRETE/0PT039097250 TOSHIBA ¿Toshih =!□ DISCRETE/OPTO DE I TDTTSSD D O l ^ S O 90D 16320 D T - 3 3 -3 S SEMICONDUCTOR MG 2 5 N 2 C K 1 TECHNICAL DATA MG2 - 5 N6 E K 1 « o « o cdZJH-o«? CM Z m 1—4 e> se CO w vO » m CN o s G T 1 A2A TOSHIBA CORPORATION

Contextual Info: $ -e 3 P R C tO U C T - A /2 /V ? O F H Ó 'lO i - X 01 a x s 7 6 ^0 3 -x o 2 < i* n * 7 6 ^0 -xû5 IxS 3 7 6 * 1 0 3 - X O 'H 7 6 -^ o ?> -xo 5 7 6 *1 0 3 - 76 *10 3 3 x x -Q xx. 7 6 * io 3 - 1 x x 7 6 ^0 3 - O x * PlFiT/N G CODE O/« . >3 ' D /M . R ' 5 x io

Contextual Info: 3X *3 0 ' A I r4 I = u^ _j I I , in o o CM Ò -H Li. Lü a: -H ro ID ro *- o | / / | 0 .3 5 I C| \ o SEATING PLANE- n -H n U -0 O .7 5 ± O .1 5 d 1 O O O O O O O O O O J 1 .4 3 5 REF' 2 4 5 6 7 8 9 10 11 12 13 14 o o o o o ol O O O O O O O o o o o o ol O O O O O O

L9091

Abstract: NJM2286 NJM2286V NJM228GD NJM228GM PL10 PL50
Contextual Info: f f R¥ co ev t=r >4 to -X in aa II II sj 55Í ^ _ FH ^ m k t -*} C/3 C/3 £kII y C/3 en 11 C/3 05 C/3 en $ & i-> - C/3 ¡I i—» 1 m » & i± ü o F¡¡ m < o fis nn & a- m ü -3 C/3 05 H 5 H O3 < ii o l + i n!l j|n < < 0 < Ö Ö 0 0 ? T ^ Í S H S hd O , I 1 < o o

208H

Contextual Info: 2. S ch em atic: 1. Dimensions: I— 0.018 ± 0 .002 1 r A A3 ft 5 o 0.100 Sec 5 0.285 MAX * XFMRS XF03562 — 2S YYWW o I— 0.015 0.005 ISOLATION: A 0.330 Max o 6 Pri 3 o- 3. E le ctrica l 0.200 □ , 1 o- mg d y WD4wj6 1 r 2CT:1 v -o 2 Specifications: 1500VAC

Contextual Info: S K M 82 REVISION RECORD E C O 26868 E C O 32510 DATE REV DC n r i V 10 RESPONSIBILITYFOR RESULTS OBTAINEDOR DAMAGES INCURREDPROMUSE OF X INFORMATIONINWHOLE ORINPART. -1 .5 4 1 [ 3 9 . 1 4 ] - 2X 0O .12O iO .O O 5 - 1 .3 1 2 i0 .0 0 5 [3 3 .3 2 1 0 .1 3 ]-

AD1F3P

Abstract: AD1A3M AD1L3N AD1F2Q AD1A4M PA33 AD1L2Q AD1A4A
Contextual Info: m ^ n "Yi m Æ * £ tfl W o + o * TS S3 A >4 s 3 p| FR 3 Pi FH X nn ns H sTO O a •p o Ö o <; CO o < o O < O CO o o H > II to cn o H TO O 2.2 V >fr § Â AD1F3P ii H /// 4.7 fm M s A 1 >< 3 Pi FH AD1L3N IS Vr Pi Pit » » m » AD1A4M V Pt PS Ü 4.7 p| S+

MG15G4GL1

Abstract: toshiba mg15g4gl1 MG15G6EL1 MG15 npn DARLINGTON 15A 248A1 mg15g4
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "TD <DISCRETE/OPTO> V ' r - ‘2 > 3 - ‘3 £ ' 90D 16203 TOSHIBA GTR MODULE SEMICONDUCTOR ¿Tasiiiht DÊjH T O T T E S D O O l b H D E 3 J - MG15G4GL1 MG15G6EL1 TECHNICAL DATA SILIC O N NPN T R IP L E DIFFUSED TYPE

MG150J2YS50

Abstract: 150J2YS50
Contextual Info: TOSHIBA MG150J2YS50 T O SH IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG 150J2YS50 H IGH P O W E R S W IT C H IN G APPLIC ATIO N S. U nit in mm M O T O R C O N T R O L APPLIC ATIO N S. 2 - ^ 5 l< ± 0 .3 3-M5 The Electrodes are Isolated from Case.

sh 0357 94v-0

Abstract: SL 0365 R 9050 c 5331
Contextual Info: II 9 IS OPTION -A- 1.27 .050 8 T 6 OPTION 1 70431 3 1 2 TYP. 2 3 TB $ 4 0.76 . TYP. .030 1.02 H O USING NO. 70 330-0036-0059 040 CKT. NO. - H O U S I N G NO. , 7 0 0 3 0 - 0 106-0 129 5 r G 6 7 8 G G G 9 3 O P T I O N A L C O R E - O U T FOR H O US IN G O P T I O N S A & D

wg311

Abstract: 2SC3732 d1352
Contextual Info: ? — S • S/“ K Silicon T ran sisto r 2S C 3 7 3 2 NPNx 'J 3 > h 7 + s s æ jg x -r # w r m « T O : m m o x A -y - f > i'" Ü I Î 7 if jâ '- 'o o 3 u ? ^ fâ fD ^ )Ï7 b f/ J '? o $ m è o a u- ÿ '''o 0 2 S A 1459 t ^ 7 ° i j / > ; i j > (T a = 25

Contextual Info: mininm. I I •2. 1 2 6 * . 0 0 4 o o o o o o o o T OP VIE W P/N 797674-2 SHOWN BO T T OM VIE W 2 -mrI Q P IG IM L DRAW [MG PI N SIGNAL 1 2 3 4 5 6 7 a 9 10 1 12 3 14 IS 16 17 GND D3 D4 OS 06 07 CEI AIO se Al 1 A9 A8 A 13 A M Wl BDY/0SY VCC 797674-1 PI N S I G N A L

C103

Abstract: IC ds9503
Contextual Info: H 0 .6 6 0 h ojn 17^+0.0400 —10 ,3 3 0 1 0 0 .0 7 0 c A ® B ® @ in o o o C 10 ,3 8 0 1 BUM P -11 10,200 h • | 0 ,4 0 0 H TDP VIEW BDTTDM VIEW PACKAGE OUTLINE SIGNATURE QA APVD a* DATE Dallas S e m ic o n d u c to r ENGR MGR: DS9503 ENGR BY: CHECK BY:

Contextual Info: 1 B ±0 . 5 REFERENCE ONL Y -o s t Header AMP P / N 17 3 2 8 1 - 3 Te rm in al n o . 3 T e rm in ai n o . 2 Cooi i ng Pe; f q r mance• :R e t . 30 Rateo v o lta g e jOoerai mg 5 v o i tage v . DC 4 . 5 0.18 C u r r e n t A i n s u l a t mg i n s i s t e n c e 11 0

Contextual Info: 30‘ I I // Ff O 0 .3 5 C 0 .1 5 O CN Ò Ò -H ro ro SEATIN G o -H LO -H Ò to 6 CN o -0O .75± O. 1 5 1 1 .4 3 5 REF P LA N E- 2 3 4 5 6 7 8 1 0 1 2 1 4 1 6 1 8 20 9 1 1 13 15 17 19 ooo ooc/ ooo ooo ooo ooo ooo ooo o ooo o ooo o ooo oo o o oo o o o ooo o ooo

Contextual Info: V DO NOT SCALE D IM EN SIO N IN D RAW IN G PRO JECT CD M ETR IC 0>J OJ CD cd o m LO Z 1 _0 —-J lq > cd o CD 3D on 3> CJ OJ OJ r~ > —l m o CD 3D > 00 00 C>J o o 3> > o CD o cQ CJ on CD 3D m # co o CD CO CJ1 co 3> 3D r~ Q_ # —I O -vJ U1 o DWG. NO. m 3D

Contextual Info: _ TO o o i b c m 90D 9097250 TOSHIBA DISCRETE/OPTO 16094 a I — • D 7 ’- 3 3 . 3 5* TOSHIBA CTU MODULE TOSHIBA SEMIC0NDUCT0R MG 1 5 0 Q 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.

LZL 3H

Abstract: 3L31
Contextual Info: ooozavm c A3& A3H 133HS JO O N iM v y a 31 VOS d B w o is n o 61100 L V Z10£ZZ' ±H3I3M ON 3NIMVUQ 3000 33V0 3ZIS 0 3 dS NOIlVOIIddV S0 V31 IIJ SSBdd ‘M O d '8 J S ‘~ IV D Ild 3 A ‘"IV N 3 IS ‘ N ld LULU^ >10 V d - Z 3 1 1 H 3 3 V 0 'a 3HVN SOIUODOBB

Contextual Info: 10 0 .5 0 ± 0 .0 5 S Q U O X PART NO. CKT SIZE VOID CKT 8 7 8 3 1 -4 0 3 3 40 21 \M 0 O -3 O @ W \Z ® V M O LEX LOGO & T U B E P /N _ N E A R ONE END O F T U B E )/ 2 .5 0 R E F GOLD M E A S .P O IN T WINDOW FAC IN G O U TW A R D S ORIENTATION OF PART IN TUBE