NXP RF MARKING CODE Search Results

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

g2il

Abstract: SOT886F1 rfid "write sensitivity" SL3S1203 uhf rfid nxp schematic diagram of active rfid tag C source code EPCglobal SOT886.t1.t4 UCODE CRC16
Contextual Info: SL3S1203_1213 UCODE G2iL and G2iL+ Rev. 3.3 — 31 January 2011 198733 Product short data sheet PUBLIC 1. General description NXP’s UCODE G2iL series transponder ICs offer leading-edge read range and support industry-first features such as a Tag Tamper Alarm, Data Transfer, Digital Switch, and

Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

SOT886F1

Abstract: SL3S1203 RFID tag eeprom SOT886.t1.t4 UHF RFID passive tag CMOS chip antenna rfid UHF j237 passive EAS rfid tags download rfid "write sensitivity" UCODE
Contextual Info: SL3S1203_1213 UCODE G2iL and G2iL+ Rev. 3.2 — 9 November 2010 198732 Product short data sheet PUBLIC 1. General description NXP’s UCODE G2iL series transponder ICs offer leading-edge read range and support industry-first features such as a Tag Tamper Alarm, Data Transfer, Digital Switch, and

BF1108_BF1108R

Abstract: BF1108_1108R_3 MARKING CODE CGK BF1108 BF1108R
Contextual Info: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The

BFU725F

Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
Contextual Info: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU725F

Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
Contextual Info: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BF1118

Abstract: BF1118R BF1118WR DIODE marking S4 06 MARKING CODE CGK
Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

BFU610F

Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power
Contextual Info: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BF1118

Abstract: MARKING CODE CGK
Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 2 — 11 January 2012 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 2 — 11 January 2012 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

DRO lnb

Abstract: JESD625-A BFU630 BFU630F
Contextual Info: BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION

Contextual Info: SL2S1402; SL2S1502; SL2S1602 ICODE ILT Rev. 3.2 — 8 October 2013 234332 Product data sheet COMPANY PUBLIC 1. General description The ISO 18000-3 mode 3/EPC Class-1 HF standard allows the commercialized provision of mass adoption of HF RFID technology for passive smart tags and labels. Main fields of

NXP date code marking

Abstract: marking nxp package SOD882D a/BAP1321LX
Contextual Info: 006 D-2 BAP1321LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits       High voltage, current controlled

Contextual Info: 006 D-2 BAP64LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled RF resistor for RF attenuators and switches

Contextual Info: 006 D-2 BAP65LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled

BAP1321LX

Contextual Info: BAP1321LX Silicon PIN diode Rev. 01 — 30 July 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ ■ High voltage, current controlled

BAP65LX

Contextual Info: BAP65LX Silicon PIN diode Rev. 01 — 11 December 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ High voltage, current controlled Low diode capacitance

transistor marking N1

Abstract: LNB ka band Germanium power
Contextual Info: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: 006 D-2 BAP64LX DF N1 Silicon PIN diode Rev. 4 — 16 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled RF resistor for RF attenuators and switches

Contextual Info: SL2S1412; SL2S1512; SL2S1612 ICODE ILT-M Rev. 3.2 — 8 October 2013 167732 Product data sheet COMPANY PUBLIC 1. General description The ISO 18000-3 mode 3/EPC Class-1 HF standard allows the commercialized provision of mass adoption of HF RFID technology for passive smart tags and labels. Main fields of

BAP64LX

Contextual Info: BAP64LX Silicon PIN diode Rev. 01 — 29 June 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ High voltage, current controlled RF resistor for RF attenuators and switches

transistor smd yw

Abstract: BAP70AM array marking 20 NXP
Contextual Info: BAP70AM Silicon PIN diode array Rev. 01 — 20 November 2006 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features • ■ ■ ■ High voltage current controlled RF resistor for RF attenuators