NTMFS4 Search Results

4934N

Abstract: NTMFS4934N 362 N MOSFET NTMFS4934NT1G
Contextual Info: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

4841NH

Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
Contextual Info: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices

4939n

Abstract: 15AID 488A
Contextual Info: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NTMFS4108N Power MOSFET 30 V, 35 A, Single N−Channel, SO−8 Flat Lead Package http://onsemi.com Features • Thermally and Electrically Enhanced Packaging Compatible with • • • • Standard SO−8 Package Footprint New Package Provides Capability of Inspection and Probe After

NTMFS4833N

Abstract: NTMFS4833NT1G 4833N NTMFS4833NT3G 4833n mosfet
Contextual Info: NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices*

mosfet 4941n

Abstract: NTMFS4941NT1G 4941n NTMFS4941
Contextual Info: NTMFS4941N Power MOSFET 30 V, 47 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

mosfet 4925n

Abstract: 4925N BFR 965 NTMFS4925NT1G
Contextual Info: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NTMFS4121N

Abstract: NTMFS4121NT1G NTMFS4121NT3G
Contextual Info: NTMFS4121N Power MOSFET 30 V, 29 A, Single N−Channel, SO−8 Flat Lead Features • • • • Low RDS on Optimized Gate Charge Low Inductance SO−8 Package These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • Notebooks, Graphics Cards

NTMFS4747NT3G

Abstract: NTMFS4747N NTMFS4747NT1G 44A17
Contextual Info: NTMFS4747N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

Contextual Info: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance

Contextual Info: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance

NTMFS4C10NT1G

Abstract: 4C10N
Contextual Info: NTMFS4C10N Power MOSFET 30 V, 46 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

4C06N

Abstract: NTMFS4C06N
Contextual Info: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NTMFS4C35N Power MOSFET 30 V, 80 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

mosfet 4927n

Abstract: 4927N NTMFS4927NT1G NTMFS4927N NTMFS4927NT3G DFN5 1.6 PACKAGE DIMENSIONS
Contextual Info: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

4939n

Abstract: mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G NTMFS4939N
Contextual Info: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

mosfet 4926n

Abstract: 4926N NTMFS4926NT1G NTMFS4926N
Contextual Info: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives

Contextual Info: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

mosfet 4926n

Contextual Info: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives

Contextual Info: NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N−Channel, SO−8 FL Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses

Contextual Info: NTMFS4985NF Power MOSFET 30 V, 65 A, Single N−Channel, SO−8 FL Features • • • • • Integrated Schottky Diode Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

Contextual Info: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package

Contextual Info: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

Contextual Info: NTMFS4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com