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    NTGD3133PT1G Search Results

    NTGD3133PT1G Datasheets (2)

    On Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NTGD3133PT1G
    		On Semiconductor Power MOSFET -20 V, -2.5 A, P-Channel, TSOP-6 Dual Original PDF 65.32KB 5
    NTGD3133PT1G
    		On Semiconductor Power MOSFET -20 V, -2.5 A, P-Channel, TSOP-6 Dual; Package: TSOP-6; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 Original PDF 104.4KB 6
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    NTGD3133PT1G Price and Stock

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    Rochester Electronics LLC NTGD3133PT1G

    MOSFET 2P-CH 20V 1.6A 6TSOP
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    DigiKey NTGD3133PT1G Bulk 9,000 673
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    onsemi NTGD3133PT1G

    MOSFET 2P-CH 20V 1.6A 6TSOP
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    Verical NTGD3133PT1G 9,000 935
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    Rochester Electronics NTGD3133PT1G 9,000 1
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    Vyrian NTGD3133PT1G 6,019
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    NTGD3133PT1G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NTGD3133P Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual Features • • • • • Reduced Gate Charge for Fast Switching −2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility


    Original     		NTGD3133P NTGD3133P/D PDF

    NTGD3133P

    Abstract: NTGD3133PT1G
    Contextual Info: NTGD3133P Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual Features • • • • • Reduced Gate Charge for Fast Switching −2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility


    Original     		NTGD3133P NTGD3133P/D NTGD3133P NTGD3133PT1G PDF

    NTGD3133P

    Abstract: NTGD3133PT1G
    Contextual Info: NTGD3133P Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual Features • • • • • Reduced Gate Charge for Fast Switching −2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility


    Original     		NTGD3133P NTGD3133P/D NTGD3133P NTGD3133PT1G PDF