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    NTGD3133P Search Results

    NTGD3133P Datasheets (3)

    On Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NTGD3133P
    On Semiconductor Power MOSFET -20 V, -2.5 A, P-Channel, TSOP-6 Dual Original PDF 65.32KB 5
    NTGD3133PT1G
    On Semiconductor Power MOSFET -20 V, -2.5 A, P-Channel, TSOP-6 Dual Original PDF 65.32KB 5
    NTGD3133PT1G
    On Semiconductor Power MOSFET -20 V, -2.5 A, P-Channel, TSOP-6 Dual; Package: TSOP-6; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 Original PDF 104.4KB 6
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    NTGD3133P Price and Stock

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    Rochester Electronics LLC NTGD3133PT1H

    PFET TSOP6 20V 2.3A 145MO
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    DigiKey NTGD3133PT1H Bulk 15,000 673
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    Rochester Electronics LLC NTGD3133PT1G

    MOSFET 2P-CH 20V 1.6A 6TSOP
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    DigiKey NTGD3133PT1G Bulk 9,000 673
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    onsemi NTGD3133PT1G

    MOSFET 2P-CH 20V 1.6A 6TSOP
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    Verical NTGD3133PT1G 9,000 935
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    Rochester Electronics NTGD3133PT1G 9,000 1
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    Vyrian NTGD3133PT1G 6,019
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    onsemi NTGD3133PT1H

    NTGD3133PT1H
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    Verical NTGD3133PT1H 15,000 935
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    Rochester Electronics NTGD3133PT1H 15,000 1
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    NTGD3133P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NTGD3133P Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual Features • • • • • Reduced Gate Charge for Fast Switching −2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility


    Original
    NTGD3133P NTGD3133P/D PDF

    NTGD3133P

    Abstract: NTGD3133PT1G
    Contextual Info: NTGD3133P Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual Features • • • • • Reduced Gate Charge for Fast Switching −2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility


    Original
    NTGD3133P NTGD3133P/D NTGD3133P NTGD3133PT1G PDF

    NTGD3133P

    Abstract: NTGD3133PT1G
    Contextual Info: NTGD3133P Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual Features • • • • • Reduced Gate Charge for Fast Switching −2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility


    Original
    NTGD3133P NTGD3133P/D NTGD3133P NTGD3133PT1G PDF

    STP4119

    Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
    Contextual Info: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices


    Original
    SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a PDF