NTE59 Search Results

Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:

NTE5934

Contextual Info: NTE5934 & NTE5935 Industrial Rectifier 75 Amp, Ultra High Power, Heavy Duty, Press Fit Features: D Available in Cathode−to−Case NTE5934 or Anode−to−Case (NTE5935) D Void Free Vacuum Die Soldering for Maximum Mechanical Strength and Heat Dissipation

NTE5911

Abstract: "Power rectifier Diode" 435a2s 10 AMP 1000V RECTIFIER DIODE NTE5892 NTE5899 NTE5900
Contextual Info: NTE5892 thru NTE5899 NTE5900 thru NTE5911 Silicon Power Rectifier Diode, 16 Amp, DO4 Description and Features: The NTE5892 through NTE5911 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

NTE5980

Abstract: NTE5906 NTE5907 NTE6005 "Power rectifier Diode"
Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:

NTE597

Contextual Info: NTE597 Silicon Rectifier Ultra Fast, 200V, 8A Description: The NTE597 is a silicon rectifier in a 2–Lead TO220 type package designed for use in switching power supplies, inverters and as free wheeling diodes. Features: D Ultrafast 50ns Recovery Time D 175°C Operating Junction Temperature

NTE5962

Abstract: NTE5963 datasheets diode nte5963 NTE5966 NTE5967
Contextual Info: NTE5962 & NTE5963 NTE5966 & NTE5967 Silicon Power Rectifier Diode, 25 Amp Features: D 25 Amp @ TC = +100°C D 300 Amp Surge Capability D Rugged Construction D Available in Standard NTE5962, NTE5966 and Reverse (NTE5963, NTE5967) Polarity Absolute Maximum Ratings:

NTE598

Contextual Info: NTE598 Silicon Rectifier Ultra Fast, 600V, 8A Description: The NTE598 is a silicon rectifier in a 2–Lead TO220 type package designed for use in switching power supplies, inverters and as free wheeling diodes. Features: D Ultrafast 50ns Recovery Time D 175°C Operating Junction Temperature

NTE594

Abstract: band switching diode
Contextual Info: NTE594 Silicon Diode, Bandswitch Description: The NTE594 is a silicon band switching diode in an SOT–23 type surface mount package intended for thick and thin–film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

Contextual Info: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp, DO5 Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a

NTE5980

Abstract: NTE5906 NTE5907 NTE6005
Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp Features: D D D D High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics:

NTE6020

Abstract: NTE5926 NTE5927 NTE6021 NTE6022 NTE6023 NTE6026 NTE6027 NTE6030 NTE6031
Contextual Info: NTE5926, NTE5927, NTE6020 thru NTE6045 Industrial Silicon Rectifier, 60A Features: D Low Leakage Current D Good Surge Capability up to 1000A D Availavle in Standard and Reverse Polarity Absolute Maximum Ratings: TJ = –65°C to +175°C Maximum Repetitive Peak Reverse Voltage, VRRM

493a2s

Abstract: NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NTE5912 NTE5933 NF-2A
Contextual Info: NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode 20 Amp, DO4 Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

NTE5911

Abstract: NTE5892 NTE5899 NTE5900
Contextual Info: NTE5892 thru NTE5899 NTE5900 thru NTE5911 Silicon Power Rectifier Diode, 16 Amp Description and Features: The NTE5892 through NTE5911 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

NTE596

Contextual Info: NTE596 Silicon Diode, Dual, Common Anode, High Speed Description: The NTE596 consists of two silicon diodes in an SOT–23 type surface mount package. The anodes are common and the device is intended for high–speed switching applications in thick and thin–film

NTE5953

Abstract: NTE5942 NTE5944 NTE5948 NTE5952 NTE5945 NTE5940 NTE5941 NTE5943 NTE5946
Contextual Info: NTE5940 thru NTE5953 Silicon Power Rectifier Diode, 15 Amp Description and Features: D Low Thermal Impedance D High Case Temperarure D Excellent Reliability D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current TC = +150°C Max , IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

NTE593

Contextual Info: NTE593 Silicon Diode, High Speed Switch Description: The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for high–speed switching in hybrid thick–film circuits. Absolute Maximum Ratings:

NTE58

Abstract: NTE59
Contextual Info: NTE58 NPN & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE5804

Abstract: NTE5832 nte599
Contextual Info: INDUSTRIAL RECTIFIERS Maximum Average Rectified Forward Current Ip In Amperes P RV 3A Volts 50 NTE5800 50 100 NTE5801 100 200 NTE5802 200 300 NTE5803 300 NTE5804 400 400 500 NTE5852 NTE5833* NTE5834 20A NTE5912 25A NTE5980 40A NTE5871* NTE5941* NTE5893* NTE5913*

Contextual Info: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

NTE595

Contextual Info: NTE595 Silicon Diode, Dual, Common Cathode, High Speed Description: The NTE595 consists of two silicon diodes in an SOT–23 type surface mount package. The cathodes are common and the device is intended for high–speed switching applications in thick and thin–film

NTE6044

Abstract: NTE6023 NTE6042 NTE6035 NTE6026 NTE6022 nte6040 NTE6027 NTE6030 NTE6031
Contextual Info: NTE5926, NTE5927, NTE6020 thru NTE6045 Industrial Silicon Rectifier 60 Amp, DO5 Features: D Low Leakage Current D Good Surge Capability up to 1000A D Availavle in Standard and Reverse Polarity Absolute Maximum Ratings: TJ = −65°C to +175°C Maximum Repetitive Peak Reverse Voltage, VRRM

NTE5930

Abstract: NTE5931 NTE59
Contextual Info: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a

NTE591

Abstract: NTE590
Contextual Info: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

NTE590

Abstract: NTE591 NTE59
Contextual Info: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V