NTE231 Search Results

SCR 200A 500V

Abstract: NTE231
Contextual Info: NTE231 Silicon Controlled Rectifier SCR TV Deflection Circuit Features: D CTV 110° − CRT Horizontal Deflection D Comutater Switch Absolute Maximum Ratings: Repetitive Peak Off−State Voltage (TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V

NPN Transistor 1.5A 700V

Contextual Info: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection

NTE2311

Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Contextual Info: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V

Contextual Info: NTE2314 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)15 Absolute Max. Power Diss. (W)90 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

NTE2314

Contextual Info: NTE2304 Silicon NPN Transistor High Current, High Speed Switch Compl to NTE2314 Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.

NTE2317

Abstract: automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor
Contextual Info: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter

Contextual Info: NTE2312 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)700 I(C) Max. (A)8 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

SCR 60A 500V

Abstract: SCR 200A 500V SCR 200A 700V
Contextual Info: NTE231 Silicon Controlled Rectifier SCR TV Deflection Circuit Features: D CTV 110° – CRT Horizontal Deflection D Comutater Switch Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V

NTE2312

Abstract: 220v 2a transistor
Contextual Info: NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited

Contextual Info: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter

547 relay ic

Abstract: NTE2314 "PNP Transistor" HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
Contextual Info: NTE2314 Silicon PNP Transistor High Current, High Speed Switch Compl to NTE2304 Description: The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications.

NPN Transistor VCEO 1000V

Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Contextual Info: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:

nte2317

Abstract: automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
Contextual Info: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter

NTE2319

Contextual Info: NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated

400V switching transistor

Abstract: npn darlington 400v 15a NPN Transistor 10A 400V NTE2315 Displays
Contextual Info: NTE2315 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast

automotive ignition

Abstract: NTE2316 105w vce 500v NPN Transistor
Contextual Info: NTE2316 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2317 is an NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter circuits for motor controls.

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

NTE199

Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT

NTE2314

Abstract: NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain b v CEO BVEBo h pE Pd 't 31a •c 0.05 BV cbo

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

SSH6N80

Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
Contextual Info: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0

NTE135A

Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Contextual Info: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.