NS 472 Search Results

560-2 LL2

Abstract: 560-2ll2 560-2 LL2 EN132400 Y1-250V 560-2 LL2 ns ECKDNA222ME ns-a472 560-2 LL2 EN132400 Y1-250V en132400 560-2 ll2 ECKDNA472ME
Contextual Info: Ceramic Disc Capacitors Type NS-A Ceramic Disc Capacitors for Safety Regulations (Type: NS-A/IEC384-14 2nd Ed. Sub-class Y1 and UL 250V) NS-A Type: • Features ■ Specifications ● Type NS-A, which is a revised type designation from our previous type designation of NS for ÒClass II

Contextual Info: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM 44C 1 OOOASL- 7 70 ns 2 0 ns 13 0 n s K M 44C 1 OOOASL- 8 80 n s 2 0 ns 150 ns K M 44C 1 OOOASL-10 10 0 ns 25 ns

Contextual Info: POR004 Effective: 3/10/2014 PREFERRED DISTRIBUTOR PRICE LIST PORTABLE CORD Yellow 90 Yellow 90 Yellow 105 Super Vu-Tron Supreme Gauge SOOW SJOOW SOOW SJOOW SOOW SEOOW SJEOOW 18/2 353.34 320.4 NS NS NS 353.34 320.40 18/3 458.5 376.33 479.86 393.58 NS 458.50

Contextual Info: POR005 Effective: 5/5/2014 PREFERRED DISTRIBUTOR PRICE LIST PORTABLE CORD Yellow 90 Yellow 90 Yellow 105 Super Vu-Tron Supreme Gauge SOOW SJOOW SOOW SJOOW SOOW SEOOW SJEOOW 18/2 374.54 339.62 NS NS NS 374.54 339.62 18/3 486.01 398.9 508.65 417.19 NS 486.01

Contextual Info: Am90C255 256K x 1 CMOS Nibble Mode Dynamic RAM Am90C255 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • High density 256K x 1 Low-power dissipation — 358 mW active High-speed operation — 80-ns access, 130-ns cycle times High-speed Nibble Mode - 15-ns access, 35-ns cycle times

Contextual Info: Am90C255 256K x 1 CMOS Nibble Mode Dynamic RAM PRELIMINARY SSZ006WV DISTINCTIVE CHARACTERISTICS • • • High density 256K x 1 Low-power dissipation — 358 mW active High-speed operation — 80-ns access, 130-ns cycle times • High-speed Nibble Mode - 15-ns access, 35-ns cycle times

D 304 x

Contextual Info: SMLS240B-NQVEMBER 1990-REVISED JANUARY 1993 TMS27C240 J PACKAGEt TOP VIEW Max Access/Mln Cycle Time VCC * 10% 100 ns 120 ns 150 ns 16-Blt Output For Use in Microprocessor-Based Systems Very High Speed SNAPI Pulse Programming Power-Saving CMOS Technology

Contextual Info: ADVANCE INFORMATION CY14E256L 256-Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with external 68µF capacitor • STORE to QuantumTrap Nonvolatile Elements is

CY14E256L

Abstract: CY14E256L-SZ25XC CY14E256L-SZ25XCT CY14E256L-SZ25XI CY14E256L-SZ25XIT STK14C88
Contextual Info: CY14E256L 256 Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns Access Times ■ Pin Compatible with STK14C88 ■ Hands Off Automatic STORE on Power Down with External 68 µF Capacitor ■ STORE to QuantumTrap Nonvolatile Elements is Initiated by

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 001-06968 Spec Title: CY14E256L 256 KBIT 32K X 8 NVSRAM Sunset Owner: Girija Chougala (GVCH) Replaced by: None CY14E256L 256 Kbit (32K x 8) nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns Access Times ■

CY14E256L

Abstract: CY14E256L-SZ25XC CY14E256L-SZ25XCT CY14E256L-SZ25XI CY14E256L-SZ25XIT STK14C88
Contextual Info: CY14E256L 256 Kbit 32K x 8 nvSRAM Functional Description • 25 ns, 35 ns, and 45 ns Access Times ■ Pin Compatible with STK14C88 ■ Hands Off Automatic STORE on Power Down with External 68 µF Capacitor ■ STORE to QuantumTrap Nonvolatile Elements is Initiated by

Contextual Info: CY14E256L 256 Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Pin compatible with STK14C88 ■ Hands off automatic STORE on power down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by

Contextual Info: March 1994 DATA SHEET_ M 67024 4 K X 16 CMOS DUAL PORT RAM FEATURES . FAST ACCESS TIME: 35 NS TO 55 NS 30 NS PRELIMINARY FOR COMMERCIAL ONLY . WIDE TEMPERATURE RANGE: -5 5 ° C T O + 125°C . 67024 L LOW POWER 67024 V VERY LOW POWER

CY22E016L

Abstract: CY22E016L-SZ25XC CY22E016L-SZ25XCT CY22E016L-SZ35XCT BUT14
Contextual Info: CY22E016L 16 Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns access times ■ Hands off automatic STORE on power down with external 68 F capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated by hardware or AutoStore on power down

Contextual Info: PRELIMINARY CY22E016L 16-Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times The Cypress CY22E016L is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an infinite number of times,

CY22E016L

Abstract: CY22E016L-SZ25XCT CY22E016L-SZ35XCT CY22E016L-SZ35XIT BUT14
Contextual Info: PRELIMINARY CY22E016L 16-Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times The Cypress CY22E016L is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an infinite number of times,

CY22E016L

Abstract: CY22E016L-SZ25XC CY22E016L-SZ25XCT CY22E016L-SZ35XCT BUT14
Contextual Info: CY22E016L 16 Kbit 2K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns access times ■ Hands off automatic STORE on power down with external 68 F capacitor ■ STORE to QuantumTrap non-volatile elements is initiated by hardware or AutoStore on power down

lt228

Abstract: b433 resonator CD 4017 PIN DIAGRAM SDL 4007 TT 2146 4043-C DB3C 828 F3L3 AB14C wy 413
Contextual Info: Preliminary Data Sheet i uy ü AT&T Microelectronics DSP1604/06 Digital Signal Processor •I 1 Features 2 Description ■ For 5 V operation: — 25 ns instruction cycle time 40 MIPS — 30 ns instruction cycle time (33 MIPS) ■ For 3.3 V operation: — 31.25 ns instruction cycle time (32 MIPS)

ICE ICC3

Contextual Info: DRAM MODULES KMM584100N 4 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • Í rac tcAc tnc KMM584100N-6 60ns 15ns 1 1 0 ns KMM584100N-7 70ns 20 ns 130ns KMM584100N-8 80ns 20 ns 150ns Fast Page Mode operation

S2MH

Contextual Info: IHM M 67024 DATA SHEET 4 K x 16 CMOS DUAL PORT RAM FEATURES . FAST ACCESS TIME: 35 NS TO 55 NS 30 NS PRELIMINARY FOR COMMERCIAL ONLY WIDE TEMPERATURE RANGE: - 55 °C TO + 125 °C 67024 L LOW POWER 67024 V VERY LOW POWER SEPARATE UPPER BYTE AND LOWER BYTE CONTROL

Contextual Info: b4E D L O O lO 1 LOGIC B DEVICES INC • □ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 12 ns maximum □ High Speed Flash Clear □ High Speed Read Access Time — 12 ns maximum □ Low Power Operation Active: 320 mW typical at 35 ns

NS472

Contextual Info: BNC Connectors 1.08 Catalog Number .43 NS-4721-1 .30 .50Ø .050Ø 3/8 - 32 THD. SINGLE "D" FLAT 75 Ω BNC Panel Mount w/ Solder Cup .90 Catalog Number .24 NS-4721-3 .17 .43 .040Ø .40Ø .50Ø 3/8 - 32 THD. SINGLE "D" FLAT 75 Ω BNC Panel Mount w/ Solder Post

Contextual Info: CY14E064L PRELIMINARY 64-Kbit 8K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns Access Times The Cypress CY14E064L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the

ECK-DNS222ME

Contextual Info: Ceramic Disc Capacitors For Safety Regulations Class II ECK-DNS Series Features • Ceramic Disc Capacitors, Type NS, are recognized by UL, CSA, BSI, SEMKO, SEV and VDE • The NS (Suffix: X) capacitors are applicable to “Class II” equipment in European safety regulations