NS 1000 N Search Results

vishay RGL

Abstract: BYM 260 BYM11
Contextual Info: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 150 ns, 250 ns, 500 ns VF 1.3 V Tj max.

color bands do-213ab

Abstract: bym red green
Contextual Info: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 150 ns, 250 ns, 500 ns VF 1.3 V Tj max.

EPA059-1000B

Abstract: EPA059-100A EPA059-100B EPA059-200A EPA059-200B EPA059-20A EPA059-20B EPA059-20C EPA059-500B EPA059-50A
Contextual Info: 24 Pin DIP Passive Delay Lines Zo OHMS ±10% TOTAL DELAY nS ±5% or ±2 nS† 50 50 50 50 100 100 100 100 100 100 200 200 200 200 200 TAP TO TAP DELAYS nS 20 50 100 200 20 50 100 200 500 1000 20 50 100 500 1000 OUTPUT RISE TME nS Max. 1.0 ± 0.2 2.5 ± 0.5

EPA059-1000B

Abstract: EPA059-100A EPA059-100B EPA059-200A EPA059-200B EPA059-20A EPA059-20B EPA059-20C EPA059-500B EPA059-50A
Contextual Info: 24 Pin DIP Passive Delay Lines Zo OHMS ±10% TOTAL DELAY nS ±5% or ±2 nS† 50 50 50 50 100 100 100 100 100 100 200 200 200 200 200 250 TAP TO TAP DELAYS nS 20 50 100 200 20 50 100 200 500 1000 20 50 100 500 1000 400 OUTPUT RISE TME nS Max. 1.0 ± 0.2 2.5 ± 0.5

IN4937

Abstract: GP 826 rgp10
Contextual Info: TYPE CURRENT VOLTAGE REVERSE RECOVERY TIME CASE Plastic BA 157 GP to BA 159 GP 1,0 A @ 50 °C 400 + 1000 V 150 n s + 500 ns DO-41 IN 4933 GP to IN 4937 GP 1.0 A @ 75 °C 50 - 600 V 150 ns DO-41 RGP 10 A to RGP 10 MT 1.0 A @ 55 °C 50+ 1000 V 150 ns + 300 ns

Contextual Info: 24 Pin DIP Passive Delay Lines Zo OHMS ±10% 50 50 50 50 100 100 100 100 100 100 200 200 200 200 200 TOTAL DELAY NS ±5% or ±2 NS TAP TO TAP DELAYS NS 20 50 100 200 20 50 100 200 500 1000 20 50 100 500 1000 OUTPUT RISE TME NS MAX 1,± 0.2 2.5 ±0.5 5 ± 1.0

Contextual Info: 1N5554 1000 V rectifier 5.0 A forward current 2000 ns recovery time 21.23 Diodes High. Page 1 of 1 Enter Your Part # Home Part Number: 1N5554 Online Store 1N5554 Diodes 1000 V rectifier 5.0 A forward current 2000 ns recovery Transistors time Integrated Circuits

thyristor tt 330 n

Abstract: thyristor skkt162 A23i thyristor tt 330 thyristor TT 18 N thyristor tt 162 n 12
Contextual Info: s e MIKRDN dv/dt « Itrms (maximum values for continuous operation) 600 A 700 A Vrsm Vrrm V drm V V V/ns 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 500 1000 1000 1000 1000 1000 1000 180; (Tease ~ . . .) Sin. Itsm Tvj = Tvj = Tvj =

BYT230PIV-1000

Abstract: BYT231PIV-1000 BYT230PIV1000
Contextual Info: BYT230PIV-1000 BYT231PIV-1000 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 30 A VRRM 1000 V VF (max) 1.8 V trr (max) 80 ns K2 A2 K1 A1 BYT231PIV-1000 A2 K1 K2 A1 BYT230PIV-1000 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME

BYT230PIV-1000

Abstract: BYT231PIV-1000
Contextual Info: BYT230PIV-1000 BYT231PIV-1000  FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 30 A VRRM 1000 V VF (max) trr (max) 1.8 V 80 ns K2 A2 K1 A1 BYT231PIV-1000 A2 K1 K2 A1 BYT230PIV-1000 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME

BYT230PIV-1000

Abstract: BYT230PIV1000 BYT231PIV-1000
Contextual Info: BYT230PIV-1000 BYT231PIV-1000 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 30 A VRRM 1000 V VF (max) 1.8 V trr (max) 80 ns K2 A2 K1 A1 BYT231PIV-1000 A2 K1 K2 A1 BYT230PIV-1000 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME

vac068a AC

Abstract: VAC068A 301t LD31
Contextual Info: 5.6 VAC068A AC Performance Specifications Clock Input Commercial Num. Characteristic Min. Max. Military Min. Max. Frequency of Operation MHz 1 50 1 40 1 Cycle Time (ns) 20 1000 2.5 1000 2, 3 Clock Pulse Width (Measured from 1.5V to 1.5V) 4, 5 Rise and Fall Time (ns)

PI-325

Abstract: VAC068A vac068a AC 481T LD31
Contextual Info: 5.6 VAC068A AC Performance Specifications Clock Input Commercial Num. Characteristic Min. Max. Military Min. Max. Frequency of Operation MHz 1 50 1 40 1 Cycle Time (ns) 20 1000 2.5 1000 2, 3 Clock Pulse Width (Measured from 1.5V to 1.5V) 4, 5 Rise and Fall Time (ns)

NS125

Abstract: AD8016 AD810 AD811 AD812 AD813 AD815 AD816 AD844 AD846
Contextual Info: AMPLIFIERS: HIGH SPEED, CURRENT FEEDBACK +/-15V or +/-5V RAILS MODEL NUMBER CLOSED LOOP GAIN UNITY GAIN GAIN FLATNESS .1dB SLEW RATE RISE TIME MIN MHZ MIN MHZ V/uSEC NSEC NSEC NSEC 2500 1200 1200 1000 3.5 NS NS NS 50 100 100 50 65 NS NS 125 0.01 .03typ .03typ

PIV-1000

Contextual Info: BYT60P-1000 BYT261PIV-1000 FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS I f a v 2x60 A V rrm 1000 V Vf (max) trr (max) 1.8 V K1 A1 BYT261 PIV-1000 70 ns FEATURES AND BENEFITS • VERY LOW REVERSE RECOVERYTIME ■ VERY LOW SWITCHING LOSSES

SOD93

Abstract: BYT261PIV-1000 BYT60P-1000 diode M4
Contextual Info: BYT60P-1000 BYT261PIV-1000 FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 60 A VRRM 1000 V VF (max) 1.8 V trr (max) 70 ns K2 A2 K1 A1 BYT261PIV-1000 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES

BYT261PIV1000

Abstract: p100w BYT261PIV-1000 BYT60P-1000
Contextual Info: BYT60P-1000 BYT261PIV-1000  FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 60 A VRRM 1000 V VF (max) trr (max) 1.8 V 70 ns K2 A2 K1 A1 BYT261PIV-1000 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES

BYT261PIV-1000

Abstract: SOD93 P20W ISOTOP BYT60P-1000 BYT261PIV1000
Contextual Info: BYT60P-1000 BYT261PIV-1000 FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 60 A VRRM 1000 V VF (max) 1.8 V trr (max) 70 ns K2 A2 K1 A1 BYT261PIV-1000 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES

PIV-1000

Abstract: BYT230PIV-1000 DIODE M4 marking BYT230PIV1000 BYT231PIV-1000 IR diodes 0B
Contextual Info: BYT230PIV-1000 BYT231PIV-1000 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS If a V v rrm V f (max) trr (max) 2 x 30 A 1000 V 1.8 V K2 A2 A2 l° ^ i K1 K1 M ' A1 K2 BYT231 PIV-1000 A1 i BYT230PIV-1000 80 ns FEATURES AND BENEFITS • ■ ■

10N100

Abstract: 12n100 D-68623 IXYS SEMICONDUCTOR IXYS 120
Contextual Info: IXFH 10N100 IXFH 12N100 VDSS HiPerFETTM Power MOSFETs IXFM 10N100 IXFM 12N100 ID25 IXFH/FM 10N100 1000 V 10 A IXFH/FM 12N100 1000 V 12 A RDS on trr 1.20 Ω 1.05 Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH)

Contextual Info: 1N5615GP thru 1N5623GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 50 A trr 150 ns, 250 ns, 300 ns, 500 ns IR 0.5 µA VF Tj max. 1.2 V 175 °C d*

DO-204AC

Abstract: 1n5617gp
Contextual Info: 1N5615GP thru 1N5623GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 50 A trr 150 ns, 250 ns, 300 ns, 500 ns IR 0.5 µA VF Tj max. 1.2 V 175 °C d*

Contextual Info: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol

kvp smd

Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
Contextual Info: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD