NS 1000 N Search Results

24N100

Abstract: 23N10 125OC
Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

NS10145

Abstract: NS10165 NS 12575T 680MN 221MN 13001 c 6h
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

npn3904

Abstract: pnp3906 3906 PNP pnp 3906 spice 3906 NPN 3904 3904 ic MMDT3946 tr 3904 J-STD-020A
Contextual Info: MMDT3946 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMDT3946 Features • · · · · · Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3357 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3357 TO-3P designed for high current switching applications.

TMS320C6455 rapid io

Abstract: SPRAAA8
Contextual Info: TMS320C6455 Fixed-Point Digital Signal Processor www.ti.com SPRS276A – MAY 2005 – REVISED JULY 2005 TMS320C6455 Fixed-Point Digital Signal Processor 1.1 • • • • • • • • • Features High-Performance Fixed-Point DSP C6455 – 1.39-, 1.17-, 1-ns Instruction Cycle Time

Contextual Info: IN STR t5 -COPTO} DlfJû'ifcilTSb 8961726 TEXAS INSTR COPTO 0G37D27 . 62C 37027 7"-33-/3 TIPL753, TIPL753A N-P-N SILICON POWER TRANSISTORS 1982 - REVISED OCTOBER 1984

60-06A

Abstract: DSEP30-06A DSEC60-06A
Contextual Info: DSEC 60-06A DSEC 60-06B HiPerFREDTM Epitaxial Diode IFAV = 2x 30 A VRRM = 600 V trr = 30/35 ns with common cathode and soft recovery VRSM VRRM V V 600 600 600 600 TO-247 AD Type DSEC 60-06A DSEC 60-06B A C A C A A C TAB A = Anode, C = Cathode, TAB = Cathode

DS90CP22

Abstract: SN65LVCP22 SN65LVCP22D SN65LVCP22PW SN65LVCP23 SN65LVDS100 SN65LVDS122
Contextual Info: SN65LVCP22 www.ti.com SLLS553B – NOVEMBER 2002 – REVISED JUNE 2003 2x2 LVDS CROSSPOINT SWITCH FEATURES • • • • • • • • • • • • • High Speed >1000 Mbps Upgrade for DS90CP22 2x2 LVDS Crosspoint Switch LVPECL Crosspoint Switch Available in

Contextual Info: SFH6700, SFH6701, SFH6702, SFH6705, SFH6711, SFH6712, SFH6719 Vishay Semiconductors High Speed Optocoupler, 5 MBd, 1 kV/ s dV/dt SFH6700, SFH6719 NC 1 A 2 C 3 NC 4 NC 1 8 VCC 7 VO A 2 7 VO 6 VE C 3 6 NC 5 GND NC 4 5 GND SFH6702, SFH6712 NC 1 FEATURES SFH6701, SFH6711

AO4456

Contextual Info: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

JF18006

Contextual Info: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use

Contextual Info: TMS320C6454 www.ti.com SPRS311I – APRIL 2006 – REVISED MARCH 2012 TMS320C6454 Fixed-Point Digital Signal Processor Check for Samples: TMS320C6454 1 Features 12 • High-Performance Fixed-Point DSP C6454 – 1.39-, 1.17-, and 1-ns Instruction Cycle Time

A842

Abstract: Diode 1N 4007
Contextual Info: Extract from the online catalog UT 4-MTD-DIO/L-R Order No.: 3046210 Feed-through modular terminal block, Connection method: Screw connection, Cross section: 0.14 mm² - 6 mm², AWG 26 - 10, Width: 6.2

MMST2907A

Abstract: J-STD-020A MMST2222A
Contextual Info: MMST2907A PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMST2907A Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMST2222A Ultra-Small Surface Mount Package Also Available in Lead Free Version SOT-323 A C

sn75185 equivalent

Contextual Info: SN75LP1185 LOW-POWER MULTIPLE RS-232 DRIVERS AND RECEIVERS SLLS335 – JANUARY 1999 D D D D D D D D D D D DB, DW, N, OR PW PACKAGE TOP VIEW Single-Chip TIA/EIA-232-F Interface for IBM PC/AT Serial Port Designed to Transmit and Receive 4-µs Pulses (Equivalent to 256 kbit/s)

L53B SOT-223

Abstract: L53B voltage regulator lm2940 L54B LM2940T-8 LM2940IMP-9 LM2940T-9 dap sot 23-5 LM2940LD-10 LM2940CT-9
Contextual Info: LM2940,LM2940C LM2940/LM2940C 1A Low Dropout Regulator Literature Number: SNVS769H LM2940/LM2940C 1A Low Dropout Regulator General Description The LM2940/LM2940C positive voltage regulator features the ability to source 1A of output current with a dropout voltage of

APT54GA60B

Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

Contextual Info: SN75372 DUAL MOSFET DRIVER SLLS025A - JULY 19 Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds D OR P PACKAGE TOP VIEW Output Supply Voltage Range up to 24 V 1A E 2A GND Low Standby Power Dissipation d e s c rip tio n The SN75372 is a dual NAND gate interface

A850

Abstract: ut 4-hesiled 12 5x20 hesiled 24 Phoenix 3046090
Contextual Info: Extract from the online catalog UT 4-HESILED 24 5X20 Order No.: 3046090 Lever-type fuse terminal block, black, for 5 x 20 mm G fuse inserts, with LED for 24 V DC Product notes

10104A

Abstract: 2x101-04A
Contextual Info: DSEP 2x 101-04A HiPerFREDTM Epitaxial Diode IFAV = 2x 100 A VRRM = 400 V trr = 30 ns with soft recovery VRSM VRRM V V 400 400 miniBLOC, SOT-227 B Type DSEP 2x 101-04A D4 Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 60°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine

Contextual Info: R6004ENX Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

54HC112

Contextual Info: SN54HC112, SN74HC112 DUAL J-K NEGATIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET 02684, DECEMBER 1982-REVISED SEPTEMBER 1987 SN54HC112 . . . J PACKAGE SN74HC112 . . . D OR N PACKAGE TOP VIEW ] 1CLK C 1 O l 6 H V CC i k C 2 15 3 1CLR 14 H 2CLR u [ 3

SN64HC540

Contextual Info: SN54HC540, SN74HC540 OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS _ SCLS007A- MARCH 1984 - REVISED JANUARY 1996 * SN54HC540. . . J OR W PACKAGE SN74HC540 . . . DW OR N PACKAGE TOP VIEW High-Current 3-State Outputs Drive Bus Lines Directly or up to 15 LSTTL Loads

Contextual Info: ą SN65C3243, SN75C3243 3ĆV TO 5.5ĆV MULTICHANNEL RSĆ232 COMPATIBLE LINE DRIVER/RECEIVER ą SLLS353G − JUNE 1999 − REVISED NOVEMBER 2004 D Operate With 3-V to 5.5-V VCC Supply D Always-Active Noninverting Receiver D D D D D D D D DB, DW, OR PW PACKAGE