NS 1000 N Search Results

vishay RGL

Abstract: BYM 260 BYM11
Contextual Info: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 150 ns, 250 ns, 500 ns VF 1.3 V Tj max.

EPA059-1000B

Abstract: EPA059-100A EPA059-100B EPA059-200A EPA059-200B EPA059-20A EPA059-20B EPA059-20C EPA059-500B EPA059-50A
Contextual Info: 24 Pin DIP Passive Delay Lines Zo OHMS ±10% TOTAL DELAY nS ±5% or ±2 nS† 50 50 50 50 100 100 100 100 100 100 200 200 200 200 200 250 TAP TO TAP DELAYS nS 20 50 100 200 20 50 100 200 500 1000 20 50 100 500 1000 400 OUTPUT RISE TME nS Max. 1.0 ± 0.2 2.5 ± 0.5

BYT230PIV-1000

Abstract: BYT231PIV-1000 BYT230PIV1000
Contextual Info: BYT230PIV-1000 BYT231PIV-1000 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 30 A VRRM 1000 V VF (max) 1.8 V trr (max) 80 ns K2 A2 K1 A1 BYT231PIV-1000 A2 K1 K2 A1 BYT230PIV-1000 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME

NS125

Abstract: AD8016 AD810 AD811 AD812 AD813 AD815 AD816 AD844 AD846
Contextual Info: AMPLIFIERS: HIGH SPEED, CURRENT FEEDBACK +/-15V or +/-5V RAILS MODEL NUMBER CLOSED LOOP GAIN UNITY GAIN GAIN FLATNESS .1dB SLEW RATE RISE TIME MIN MHZ MIN MHZ V/uSEC NSEC NSEC NSEC 2500 1200 1200 1000 3.5 NS NS NS 50 100 100 50 65 NS NS 125 0.01 .03typ .03typ

ixys dsei 2x30

Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM

PIV-1000

Contextual Info: BYT60P-1000 BYT261PIV-1000 FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS I f a v 2x60 A V rrm 1000 V Vf (max) trr (max) 1.8 V K1 A1 BYT261 PIV-1000 70 ns FEATURES AND BENEFITS • VERY LOW REVERSE RECOVERYTIME ■ VERY LOW SWITCHING LOSSES

SOD93

Abstract: BYT261PIV-1000 BYT60P-1000 diode M4
Contextual Info: BYT60P-1000 BYT261PIV-1000 FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 60 A VRRM 1000 V VF (max) 1.8 V trr (max) 70 ns K2 A2 K1 A1 BYT261PIV-1000 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES

PIV-1000

Abstract: BYT230PIV-1000 DIODE M4 marking BYT230PIV1000 BYT231PIV-1000 IR diodes 0B
Contextual Info: BYT230PIV-1000 BYT231PIV-1000 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS If a V v rrm V f (max) trr (max) 2 x 30 A 1000 V 1.8 V K2 A2 A2 l° ^ i K1 K1 M ' A1 K2 BYT231 PIV-1000 A1 i BYT230PIV-1000 80 ns FEATURES AND BENEFITS • ■ ■

Contextual Info: 1N5615GP thru 1N5623GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 50 A trr 150 ns, 250 ns, 300 ns, 500 ns IR 0.5 µA VF Tj max. 1.2 V 175 °C d*

Contextual Info: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol

kvp smd

Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
Contextual Info: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD

ixys dsei 2x61

Abstract: DSEI 2X61-10B ixys dsei 2*61-10b
Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM V 1000 VRRM DSEI 2x61 IFAVM = 2x60 A VRRM = 1000 V = 35 ns trr miniBLOC, SOT-227 B Type V 1000 DSEI 2x61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

Contextual Info: Advanced Technical Information IXFN 24N100 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 1000 V = 24 A = 0.39 W trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000

Contextual Info: BYD33DGP thru BYD33MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 30 A ERSM 10 mJ, 7 mJ trr 150 ns, 250 ns, 300 ns IR 5.0 µA

Contextual Info: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000

Contextual Info: Non-Volatile Memory EPROM Products Density Kbits Maximum ICC Active Current (ns) VCC Voltage (mA) Tolerance (V) Organization (%) Clock Speed Maximum ICC Standby Current (µA) Package Options FM27C010x120 1000 120 30 5 10 X8 100 CDIP PLCC FM27C010x150 1000

1N4942GP

Abstract: 1N4944GP 1N4948GP DO-204AL JESD22-B102D J-STD-002B
Contextual Info: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.0 A 200 V to 1000 V 25 A 150 ns, 250 ns, 500 ns 1.0 µA 1.3 V 175 °C d* e t n

13n10

Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS

Z100FF3

Abstract: Z100FF5 Z20FF3 Z20FF5 Z50FF3 Z50FF5 Z20FFX
Contextual Info: Z20FF3 Z20FF5 Z50FF3 Z50FF5 Z100FF3 Z100FF5 2,000 V - 10,000 V Rectifiers 180 mA - 1000 mA Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 4 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average

PLDM

Abstract: PLDM15-1 PLDM15-10 PLDM15-2 PLDM15-5
Contextual Info: FAST / TTL Buffered I/O 4-Bit Programmable Delay Modules Electrical Specifications at 25OC Initial 4-Bit FAST Delay Error ref. Referenced to "0000" - Delay ns per Program Setting (P4*P3*P2*P1) Part per Step to 0000 Delay (ns) Number (ns) (ns) 0000 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 1101 1110 1111

Contextual Info: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient

Contextual Info: n ixY S Fast Recovery Epitaxial Diode FRED v RSM V* RRM V DSEI12 IFAVM f\ A Type V RRM 12 A 1000 V t 50 ns TO-220 AC 1 \ C V DSEi 12-10 A 1000 1 0 00 Symbol Test Conditions Maximum Ratings ^FRM T1 VJ = T1 VJM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited by TVJM

rgp30m

Abstract: RGP30J
Contextual Info: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 3.0 A 50 V to 1000 V 125 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C d* e t n Pate

Contextual Info: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol VCES IC25 VCE sat tfi(typ) Test Conditions =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM