NPTB00004DR Search Results
NPTB00004DR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
PIMD3Contextual Info: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz |
Original |
NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3 | |
nptb00004
Abstract: NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100
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Original |
NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100 | |
PIMD3Contextual Info: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz |
Original |
NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3 |