NPN VCBO 80V Search Results

NPN VCBO 80V Result Highlights (5)

Part	Manufacturer	Description	Download
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet
TTC5810	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini	Datasheet
TTC019	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini	Datasheet

NPN VCBO 80V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
vce 1v Abstract: NTE216 Contextual Info: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V	Original	NTE216 150mA, 300mA, 500mA, 800mA, vce 1v NTE216	PDF
NTE216 Abstract: driver transistor hfe 60 vce 1v Contextual Info: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V	Original	NTE216 150mA, 300mA, 500mA, 800mA, NTE216 driver transistor hfe 60 vce 1v	PDF
2N2193 Abstract: 002120 Contextual Info: IvKU 2N2193 NPN SILICON TRANSISTOR TO-39 2N2193 is NPN silicon planar transistor designed for medium power switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 80V Co l l ector-Emitter Voltage VCE0 50V Emitter-Base Voltage	OCR Scan	2N2193 2N2193 800mW 100hA 150mA* 500mA* 150raA* 0033C0, 150mA 002120	PDF
NTE46 Contextual Info: NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE46 500mA 100mA, 100MHz, 100kHz NTE46	PDF
2N3741 Abstract: SHD4181 SHD4181A SHD4181B SHD4182 SHD4182A SHD4182B SHD4183 SHD4183A SHD4183B Contextual Info: POWER TRANSISTOR BIPOLAR POWER TRANSISTORS Ic Max. Contin. Collector Current Amps NPN / PNP VCBO (Collector to Base Voltage) PACKAGE TYPE NPN 8.0 5.0 S 4.0 HD-5 CONFIG. 80V SINGLE SHD4182 SINGLE SINGLE S 4.0 HD-5A S HD-5B 100V SHD4181 SHD4184 SHD4183 SHD4182A	Original	SHD4182 SHD4181 SHD4184 SHD4183 SHD4182A SHD4181A SHD4184A SHD4183A SHD4182B SHD4181B 2N3741 SHD4181 SHD4181A SHD4181B SHD4182 SHD4182A SHD4182B SHD4183 SHD4183A SHD4183B	PDF
Contextual Info: F 2N2193 NPN SILICON TRANSISTOR TO-39 2 N 2 1 93 is NPN silicon planar transistor designed for medium power switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 80V Co l l ector-Emitter Voltage VCE0 50V Emitter-Base Voltage	OCR Scan	2N2193 800mW 150mA* 500mA* 0033G3, 150mA 20MHz	PDF
2SC697 Abstract: 2SA547 2SC697A 2SA547A NPN VCBO 80V Contextual Info: 2SC697, 2SC697A 2SC697, 2SC697A NPN + 7° U'—J-SS/'Si NPN Epitaxial Planar ^ S ^ W I f f l / M e d i u m Power Amplifier 2SA547, 2SA547A <fc n > ~ f 'J ^ U /C om plem en tary pair with 2SA547, 2SA547A $$ /F e a t u r e s • 3 1/ ^ • — -X ll,E E VcBO £ > ; * ; l ! H 'o / H i g h VCBO	OCR Scan	2SC697, 2SC697A 2SA547, 2SA547A 2SA547A 2SC697 2SA547 2SC697A NPN VCBO 80V	PDF
2SD288 Contextual Info: SavantIC Semiconductor Product Specification 2SD288 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Collector-base voltage : VCBO=80V ·Collector dissipation : PC=25W TC=25 APPLICATIONS ·Low frequency power amplifier ·Power regulator applications	Original	2SD288 O-220C 2SD288	PDF
NTE2646 Contextual Info: NTE2646 Silicon NPN Transistor General Purpose Amplifier, Switch Surface Mount Features: D Low Current D Low Voltage Applications: D General Purpose Switching and Amplification Absolute Maximum Ratings: Collector−Base Voltage Open Emitter , VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V	Original	NTE2646 100MHz 200Hz NTE2646	PDF
2sd288 Abstract: 2sD288 Y Contextual Info: Inchange Semiconductor Product Specification 2SD288 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Collector-base voltage : VCBO=80V ·Collector dissipation : PC=25W TC=25℃ APPLICATIONS ·Low frequency power amplifier ·Power regulator applications	Original	2SD288 O-220C 2sd288 2sD288 Y	PDF
NTE18 Abstract: NTE19 Contextual Info: NTE18 NPN & NTE19 (PNP) Silicon Complementary Transistors High Voltage, High Current Capacity Driver Applications: D Drivers for Amplifiers of up to PO = 60W Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V	Original	NTE18 NTE19 100mA 500mA, NTE18 NTE19	PDF
NTE18 Abstract: NTE19 Contextual Info: NTE18 NPN & NTE19 (PNP) Silicon Complementary Transistors High Voltage, High Current Capacity Driver Applications: D Drivers for Amplifiers of up to PO = 60W Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V	Original	NTE18 NTE19 100mA 500mA, NTE18 NTE19	PDF
NPN Transistor VCEO 80V 100V Abstract: NTE2347 Contextual Info: NTE2347 Silicon NPN Transistor General Purpose, Medium Power Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers. Absolute Maximum Ratings: Collector–Base Voltage IE = 0 , VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V	Original	NTE2347 NTE2347 500mA, 500mA NPN Transistor VCEO 80V 100V	PDF
Contextual Info: NTE18 NPN & NTE19 (PNP) Silicon Complementary Transistors High Voltage, High Current Capacity Driver Applications: D Drivers for Amplifiers of up to PO = 60W Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V	Original	NTE18 NTE19 100mA 500mA,	PDF

Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BST52 ISSUE 3 - JANUARY 1996_ FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — AS3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE UNIT Vcbo	OCR Scan	BST52 500mA, -500mA FMMT614 500mA	PDF
MMBTA06LT1 Abstract: mbta06 Contextual Info: MBTA06LT1 NPN EPITAXIAL SILICON TRANSISTOR * High Collector-Emitter Voltage:Vcbo=80V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Vcbo 80 V Collector-Emitter Voltage Vceo 80 V Emitter-Base Voltage	Original	MBTA06LT1 500mA 225mW 100mA 100mA 100MHz 062in MMBTA06LT1 300uS mbta06	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KSC2331 TO-92L TRANSISTOR NPN 1.EMITTER FEATURE z Complement to KSA931 z High Collector-Base Voltage: VCBO=80V z Collector Current: IC=700mA z Collector Dissipation: PC=1W	Original	O-92L KSC2331 O-92L KSA931 700mA 500mA	PDF
nte297 Abstract: NTE297MP Contextual Info: NTE297 NPN & NTE298 (PNP) Silicon Complementary Transistors Audio Amplifier, Driver Features: D High Collector–Emitter Voltage D Ideal for 25 – 30W Low–Frequency Output Drive Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V	Original	NTE297 NTE298 500mA, 300mA, 100MHz NTE297MP NTE297	PDF
KSA931 Abstract: KSC2331 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSC2331 TO-92MOD TRANSISTOR NPN 1.EMITTER FEATURE z Complement to KSA931 z High collector-Base Voltage: VCBO=80V z Collector current: IC=700mA z Collector dissipation: PC=1W	Original	O-92MOD KSC2331 O-92MOD KSA931 700mA 500mA KSA931 KSC2331	PDF
KSA931 Abstract: KSC2331 Contextual Info: KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92L • Complement to KSA931 • High Collector-Base Voltage VCBO=80V • Collector Current IC=700mA • Collector Dissipation PC=1W ABSOLUTE MAXIMUM RATINGS TA=25°°C	Original	KSC2331 O-92L KSA931 700mA KSA931 KSC2331	PDF
NPN Transistor VCEO 80V 100V Abstract: 2N4239 LE17 Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V Min , VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)	Original	2N4239 O-205AD) NPN Transistor VCEO 80V 100V 2N4239 LE17	PDF
KSC2331 Abstract: KSA931 Contextual Info: KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92L • Complement to KSA931 • High Collector-Base Voltage VCBO=80V • Collector Current IC=700mA • Collector Dissipation PC=1W ABSOLUTE MAXIMUM RATINGS TA=25	Original	KSC2331 O-92L KSA931 700mA 500mA, KSC2331 KSA931	PDF
KSC1008 Contextual Info: KSC1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSA708 • High Collector-Base Voltage: VCBO=80V • Collector Current: IC=700mA • Collector Dissipation: PC=800mW ABSOLUTE MAXIMUM RATINGS TA=25°°C	Original	KSC1008 KSA708 700mA 800mW KSC1008	PDF
Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V Min , VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)	Original	2N4239 34mW/Â O-205AD)	PDF

NPN VCBO 80V Search Results

NPN VCBO 80V Result Highlights (5)

NPN VCBO 80V Datasheets Context Search

vce 1v

NTE216

2N2193

NTE46

2N3741

2SC697

2SD288

NTE2646

2sd288

NTE18

NTE18

NPN Transistor VCEO 80V 100V

MMBTA06LT1

nte297

KSA931

KSA931

NPN Transistor VCEO 80V 100V

KSC2331

KSC1008