NPN TRANSISTORS 400V 1A Search Results

UPT311

Abstract: SS-050 A UPT312 UPT313 UPT314 UPT315 UPT321 UPT322 UPT323 UPT324
Contextual Info: POWER TRANSISTORS UPT311 UPT312 UPT313 UPT314 UPT315 2 Amp, 400V, Planar NPN UPT321 UPT322 UPT323 UPT324 UPT325 DESCRIPTION FEATURES • Collector-Base Voltage: up to 400V • Peak Collector Current; 3A • Turn-on Time: 200 ns • Turn-off Time-. 800 ns Unitrode high voltage transistors provide

743 ic

Abstract: JE13009 MJE13009 IC 741 AMP
Contextual Info: MJE13009 NPN POWER TRANSISTORS 400 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus - 400V (Min). • VCEV = 700V blocking capability

2N6510

Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
Contextual Info: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass

2SC2613

Contextual Info: Inchange Semiconductor Product Specification 2SC2613 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector breakdown voltage : VCEO=400V Min APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING

2SC2613

Contextual Info: SavantIC Semiconductor Product Specification 2SC2613 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High collector breakdown voltage : VCEO=400V Min APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING

TIP47

Abstract: npn transistors 400V 1A tip50 TIP49 TIP48 TIP47.48 C143EF TIP47..48 tip48 equivalent TIP48 NPN
Contextual Info: SavantIC Semiconductor Product Specification TIP47/48/49/50 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High sustaining voltage : VCEO sus = 250~400V ·1A rated collector current APPLICATIONS ·High voltage and switching applications

2SC867

Contextual Info: Inchange Semiconductor Product Specification 2SC867 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High collector-base breakdown voltage :VCBO=400V min APPLICATIONS ・For high voltage and switching applications PINNING(see Fig.2) PIN

TIP47

Abstract: TIP50 TIP47 POWER OF TRANSISTOR tip47
Contextual Info: TIP47, 50 High Voltage Power Trasnsitors High Voltage NPN Silicon Power Transistors are designed for line operated audio output amplifier, and switching power supply drivers applications. Features: • Collector-Emitter sustaining voltage- 250 - 400V Minimum .

2SC867

Contextual Info: SavantIC Semiconductor Product Specification 2SC867 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High collector-base breakdown voltage :VCBO=400V min APPLICATIONS ·For high voltage and switching applications PINNING(see Fig.2) PIN DESCRIPTION

2SC867

Abstract: npn transistors 400V 1A
Contextual Info: JMnic Product Specification 2SC867 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High collector-base breakdown voltage :VCBO=400V min APPLICATIONS ・For high voltage and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base

2SC2553

Abstract: IN 400 DC
Contextual Info: Inchange Semiconductor Product Specification 2SC2553 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High collector breakdown voltage : VCEO=400V Min ・Excellent switching time : tr=1.0 s(Max.) : tf=1.0μs(Max.@IC=4A APPLICATIONS

BUT22C

Abstract: BUT22B BUT22
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT22B/C DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)- BUT22B 450V(Min)- BUT22C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching

BUT22

Abstract: NPN Transistor 1.0A 400V BUT22BF BUT22CF
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT22BF/CF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)- BUT22BF 450V(Min)- BUT22CF ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching

BUS22C

Abstract: 9v dc motor NPN Transistor 1A 400V BUS22B
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS22B/C DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min)-BUS22B 450V (Min)-BUS22C APPLICATIONS ·Designed for use in converters, inverters, switching

MJ13071

Abstract: MJ1307 MJ13070 mj130
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)—MJ13070 = 450V(Min)—MJ13071 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in

2sc2555

Contextual Info: Inchange Semiconductor Product Specification 2SC2555 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・High collector breakdown voltage VCEO=400V(Min) ・Excellent switching times : tr=1.0 s(Max.) tf=1.0μs(Max.)@ IC=4A APPLICATIONS ・Switching regulator and high voltage

2N6674

Abstract: NPN Transistor 10A 400V 2N6675 300V transistor npn 2a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6674/6675 DESCRIPTION •High Power Dissipation ·High Switching Speed ·Collector-Emitter Breakdown Voltage: V BR CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage switching applications such as:

2sc2555

Abstract: DC DC converter 5v to 200V ic
Contextual Info: SavantIC Semiconductor Product Specification 2SC2555 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·High collector breakdown voltage VCEO=400V(Min) ·Excellent switching times : tr=1.0µs(Max.) tf=1.0µs(Max.)@ IC=4A APPLICATIONS ·Switching regulator and high voltage

2SC2553

Abstract: DC DC converter 5v to 200V ic npn transistors 400V 1A npn transistors 400V 3A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2553 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage : VCEO=400V Min ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=4A APPLICATIONS ·Switching regulator and high voltage

2SC2552

Abstract: npn transistors 400V 1A DC DC converter 5v to 400V DC DC converter 5v to 200V ic npn transistors 400V
Contextual Info: SavantIC Semiconductor Product Specification 2SC2552 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage : VCEO=400V Min ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=0.8A APPLICATIONS ·Switching regulator and high voltage

BUX82

Abstract: BUX83 NPN Transistor VCEO 1000V bux8
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX82/83 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 ·High Switching Speed APPLICATIONS ·Designed for use as high-speed power switch at high

e13005 2

Abstract: E13005 MJE1300 E13005 -2 transistor E13005 E13005 D e13005- 2 transistors mje13005 npn transistors 700V 1A UJ05
Contextual Info: MJE13005 NPN POWER TRANSISTORS 400 VOLTS 4 AMP, 75 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • V C E O su s = 400V (Min). • VcEV = 700V blocking capability CASE STYLE T0-220AB

MJE13007

Abstract: v733 VCB 400V MJE13 U105
Contextual Info: MJE13007 NPN POWER TRANSISTORS 400 VOLTS 8 AMP, 80 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • VcEO sus = 400V (Min). • VCEV = 700V blocking capability C A S E S T Y L E T0-220AB

Contextual Info: , Lf na. J C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY70A Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEo(sus) = 400V(Min) • Low Collector-Emitter Saturation Voltagetr 5.0V(Max.)@ lc= 4A