NPN TRANSISTOR WC Search Results

Contextual Info: / = 7 SGS-THOM SOil BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

B.A date sheet karachi

Abstract: BF547W marking code e2 m1b marking BF547 SCD31
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors June 1994 Philips Semiconductors Product specification NPN 1 GHz wideband transistor

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3444 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3444 is a silicon NPN epitaxial type transistor designed for relay OUTLINE DRAWING u"« drive, power supply application.

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5214 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. unit mm It designed with high collector current and 2 to 3.5W low frequency power

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

BUX12

Abstract: sonde type k Emetteur pbgi mfb2 bux THOMSON k50 transistor thomson transistor de puissance rf
Contextual Info: *B UX12 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS T O R S IL IC IU M NPN, M ESA T R IP L E D IF F U S E ^ P r e fe rr e d device Dispositif recommandé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension

Contextual Info: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,

MRF1057T1

Abstract: RN2322
Contextual Info: Order this document by MRF1057T1/D Advance Information NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 70 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @ 1.0 GHz, 3.0 V and 5.0 mA

transistor MU 813

Abstract: case 317-01 MRF931
Contextual Info: MOTOROLA SC XSTRS/R F 4b E 7> • b3b72S4 0ÜT4«Î47 0 MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA MRF931 T he R F Line LOW CU RREN T HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed primarily for use in tow-power amplifiers to 1.0 GHz.

Contextual Info: TRANSISTOR ARRAY <1 Q 2 TRIPLE NPN T K series DARLINGTON T R A N S IS T O R A R R A Y 4* F e a tu re s Ä • NPN 3 E S # « J£ • 8 > iOu -i > 7 ' \ > ,-z.y • * - K A' , Vz = 60±l0V • h P t = 2.5W • ¡S& jfcitlipp, min.1500 • Triple NPN darlington transistor array

transistor bc 577

Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2

PART NUMBER MARKING SC70-6

Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Contextual Info: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching

a02 Transistor rf

Abstract: transistor bf 198
Contextual Info: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package

Motorola AN-546

Abstract: MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application
Contextual Info: 1EE D I b3b 72 54 00fl7fc.?fc> M | MOTOROLA SC MOTOROLA r'33-/r X STR S/R SEM ICO NDUCTOR TECHNICAL DATA MRF460 T h e R F L in e 40 W PEP - 3 0 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for applications as a high-power linear ampli­

BUJ106A

Contextual Info: Philips Sem iconductors Preliminary specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation

564 sot363

Contextual Info: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22k£2, R2=22k£i) Tape loading orientation

Contextual Info: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation

BUT12

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,

Contextual Info: MOTOROLA Order this document by BUL44/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L 44* BUL44F* SW ITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES

hp2530

Abstract: IB32 MPS-U60 MPSU60 transistor ll6 TRANSISTOR mpsu60
Contextual Info: MOTOROLA SEMICONDUCTOR MPS-U60 TECHNICAL DATA ¡s& CON ANNULAR TRANSISTOR PNP SILICON HIGH VOLTAGE TRANSISTOR sigred for general-purpose applications requiring high breakItages, low saturation voltages and low capacitance. Com plem ent to NPN T y p e M P S -U IO

2sa 940

Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
Contextual Info: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are

AT-310

Abstract: AT-31011 AT-31033 SAI SOT23
Contextual Info: Thal mLßm HP AE CWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data - I AT-31011 AT-31033 Features Description • High Perform ance Bipolar