NPN TRANSISTOR 1000 MA Search Results

Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

UTCTIP112

Abstract: QW-R203-022
Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

Contextual Info: UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES 1 2 3 *Collector-Emitter Voltage: VCES = 30V *Collector Power Dissipation: Pc max = 1000 mW 4 SOT-223 1:EMITTER ABSOLUTE MAXIMUM RATINGS

diode r207

Abstract: "Darlington Transistor" PZTA14
Contextual Info: UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES 1 2 3 *Collector-Emitter Voltage: VCES = 30V *Collector Power Dissipation: Pc max = 1000 mW 4 SOT-223 1:EMITTER ABSOLUTE MAXIMUM RATINGS

Contextual Info: MMT74 SILICON M IC R O M IN IA T U R E NPN SILICON ANNULAR NPN SILICON RF AM PLIFIER TRANSISTOR TRANSISTOR . . . designed fo r high-gain, low-noise am plifier, oscillator and m ixer applications. • High Current G ain—Bandwidth Product — f y = 1000 M H z (T yp ) @ I q = 4.0 mAdc

MJE18002

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: ON Semiconductor MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die

MJE18002

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 mpf930a
Contextual Info: ON Semiconductort MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die

TRANSISTOR R57

Abstract: 2SC5754 CQ 419 ne664 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A
Contextual Info: NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FRQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 20 GHz ICBO PARAMETERS AND CONDITIONS TYP MAX 1000 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 1000 hFE DC Current1 Gain at VCE = 3 V, IC = 100 mA

TRANSISTOR 618

Abstract: J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS
Contextual Info: Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration

Contextual Info: TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm • NPN and PNP transistors are mounted on a compact and slim package. • High DC current gain : NPN hFE = 400 to 1000

TPC6901

Abstract: MS10S
Contextual Info: TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm • NPN and PNP transistors are mounted on a compact and slim package. • High DC current gain : NPN hFE = 400 to 1000

Contextual Info: TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm • NPN and PNP transistors are mounted on a compact and slim package. • High DC current gain : NPN hFE = 400 to 1000

TPC6901

Contextual Info: TPC6901 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm • NPN and PNP transistors are mounted on a compact and slim package. • High DC current gain : NPN hFE = 400 to 1000

Contextual Info: ON Semiconductor MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state−of−the−art die

Contextual Info: ON Semiconductor MJE18006 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS The MJE18006 has an applications specific state−of−the−art die

MJE18006

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: ON Semiconductort MJE18006 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS The MJE18006 has an applications specific state–of–the–art die

MJE18006

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 si 625
Contextual Info: ON Semiconductor MJE18006 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS The MJE18006 has an applications specific state–of–the–art die

Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

D1662

Abstract: 2SD1662
Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1662 High Current Switching Applications Unit: mm • High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) · Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

d1662

Abstract: 2SD1662 D-1662
Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1662 High Current Switching Applications Unit: mm • High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

D1662

Abstract: 2SD1662
Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

ballast electronic hps

Abstract: TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18006* M JF18006* Designer’s Data Sheet SWITCHMODE™ ‘ Motorola Preferred Dtvlct NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS

D1662

Abstract: 2SD1662
Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)