NPN SILICON EPITAXIAL PLANAR TRANSISTOR 700 V Search Results

BV45

Contextual Info: BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage

BV45

Contextual Info: BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage

bv32

Abstract: TRANSISTOR BV32 switching transistor bv-32
Contextual Info: BV32 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage

bv32

Abstract: TRANSISTOR BV32 switching transistor BV32 to92
Contextual Info: BV32 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage

13002a

Abstract: 13002A transistor ST-13002 ST13002A 019G 700 v power transistor
Contextual Info: ST 13002A NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400

Contextual Info: MMBTSC3324 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: z High voltage: VCEO=120V z High hFE:hFE=200-700

free IC npn transistor

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are

2N4300

Contextual Info: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc

2SC5125

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,

Contextual Info: MMBT9018 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Description SC-59 A L The MMBT9018 is designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13002AG Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS „ DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UBV45 NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS „ DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

TRANSISTOR bf959

Abstract: BF 331 TRANSISTORS BF959 BF 183 transistor transistor bf 254
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: Small Signal Transistor Arrays UNA0222 UN222 Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives 12° • Absolute Maximum Ratings Ta = 25°C NPN Overall 6.5±0.3 Symbol Rating Unit Collector-base voltage

MMBTSC945

Contextual Info: MMBTSC945 NPN Silicon Epitaxial Planar Transistors For switching and AF amplifier applications The transistor is subdivided into four groups O, Y, P and L, according to its DC current gain. As complementary type the PHP transistor MMBTSA733 is recommended.

BC337A

Contextual Info: D BC337 BC337A BC338 ^ 5 3 ^ 3 1 Q027530 5T4 H A P X N AUER PHILIPS/DISCRETE _ / V _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers.

Contextual Info: • ^ £ 3 1 3 1 0Q5£bb7 7=12 * A P X N ANER PHILIPS/DISCRETE BSV52 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS • High-speed switching N-P-N transistor in a m icrominiature plastic envelope. It is intended fo r very high-speed saturated switching in thick and thin -film circuits.

transistor 3053

Abstract: 3053 TRANSISTOR 2n3053 transistor 2n3053
Contextual Info: 2N 3053 SILICON PLANAR NPN AMPLIFIER AND SWITCH The 2N 3053 is a silicon planar epitaxial NPN transistor in Je d ecT O -39 metal case, intend­ ed fo r m edium -current switching and am p lifie r applications. ABSOLUTE MAXIMUM RATINGS VcBO V cE O V ebo lc

Contextual Info: bbS3*J31 0015515 “=! ObE D N AMER PHILIPS/DISCRETE BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 variant, especially suitable for use in driver stages of audio amplifiers in thick and thin-film hybrid circuits.

transistor 3053

Abstract: 3053 TRANSISTOR 2N3053
Contextual Info: 2N 3053 SILICON PLANAR NPN A M P L IF IE R A N D SW ITCH The 2N 3053 is a silicon planar epitaxial NPN transistor in JedlecTO-39 metal case, intend­ ed for medium-current switching and amplifier applications. A BSO LUTE M A X IM U M R A TIN G S V C BO V cE O

2N6718

Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR

ALG TRANSISTOR

Contextual Info: bbSB'lBl Q024547 02b * A P X N AflER PHILIPS/DISCRETE b7E D _ J BCV62; 62A BCV62B; 62C V SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SOT-143 plastic envelope, designed for use in applications where the working p oint must be independent o f temperature.

Contextual Info: MPS455 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS455 is a silicon NPN medium power transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier and switching applications.

BCW71

Contextual Info: BCW71 and BCW72 Series Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View ct u d ro P New .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95)