NPN SILICON EPITAXIAL PLANAR TRANSISTOR 700 V Search Results

BV45

Contextual Info: BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage

BV45

Contextual Info: BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage

bv32

Abstract: TRANSISTOR BV32 switching transistor bv-32
Contextual Info: BV32 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage

bv32

Abstract: TRANSISTOR BV32 switching transistor BV32 to92
Contextual Info: BV32 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage

13002a

Abstract: 13002A transistor ST-13002 ST13002A 019G 700 v power transistor
Contextual Info: ST 13002A NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400

transistor 13002

Abstract: 13002 npn ST-13002 transistor TO-92 13002 13002 transistor 13002 ST 13002 13002 TO-92 ST13002 13002 power transistor
Contextual Info: ST 13002 NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400

Contextual Info: MMBTSC3324 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V High hFE:hFE=200-700

Contextual Info: MMBTSC3324 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: z High voltage: VCEO=120V z High hFE:hFE=200-700

13003z

Abstract: 13003
Contextual Info: ST 13003Z NPN Silicon Epitaxial Planar Transistor for power switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 450 V Emitter Base Voltage VEBO 9 V IC 1.3

free IC npn transistor

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are

2N4300

Contextual Info: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc

2SC5125

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,

Contextual Info: MMBT9018 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Description SC-59 A L The MMBT9018 is designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13002AG Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS „ DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage

TRANSISTOR bf959

Abstract: BF 331 TRANSISTORS BF959 BF 183 transistor transistor bf 254
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

BFW30

Abstract: bfw 10 transistor bfw 30 transistor transistor BFW 10
Contextual Info: BFW 30 NPN Silicon planar RF transistor BFW 30 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 TO-72 , designed for universal application up into the GH z range, e.g. for vertical amplifiers in broadband oscillographs and for broadband antenna amplifiers. Terminals

transistor D3

Abstract: 2N2880
Contextual Info: TYPE 2N2880 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR D3 H c< r •o rm m s FOR POWER-AMPLIFl ER AND HIGH-SPEED-SWITCHING APPLICATIONS 7 CO z ce 700 o ° • 30 W at 100°C Case Temperature • Max VcE sat) ° f 0-25 V at lc = 1 A • Max tr of 80 ns at lc = 1 A

Contextual Info: Small Signal Transistor Arrays UNA0230 UN230 Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) Unit: mm For motor drives 10 0.2+0.1 –0.0 0.4±0.1 9 8 7 6 0.5 Parameter NPN Overall Symbol Rating Unit VCBO −10

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UBV45 NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

Contextual Info: Small Signal Transistor Arrays UNA0222 UN222 Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives 12° • Absolute Maximum Ratings Ta = 25°C NPN Overall 6.5±0.3 Symbol Rating Unit Collector-base voltage

Contextual Info: Small Signal Transistor Arrays UNA0216 UN216 Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives 12 3 • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR