NPN EPITAXIAL SILICON ZG Search Results

transistor marking zg

Abstract: npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor
Contextual Info: Central” CMXT2222A Semiconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal general

Transistor BSX 62-16

Contextual Info: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3

ABE 422

Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
Contextual Info: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high

Transistor BFr 99

Abstract: Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620
Contextual Info: ÍSIEû ESC D • fl235bDS QQQMb70 2 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ BFR34A 2 N 6620 SIEMENS AKTIEN6ESELLSCHAF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 867 intended for use in RF amplifiers up to the GHz range,

bfr 547

Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39
Contextual Info: —— SSC D • - fl235bOS 0QQ4bfc>2 3 M S I E G NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF T BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise

transistor c 5855

Abstract: npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44
Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C

2SC2783

Abstract: VC-80 Series uhf 13W amplifier
Contextual Info: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 UHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm 1R4±Q5 Output Power : Po = 40W Min. (f = 470MHz, V e e = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

Contextual Info: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • .5.1 M AX. High DC Current Gain and Excellent hpg Linearity : h-FE (1)= 140—600 (VCE = 1V, IC = 0,5A)

2-13B1A

Abstract: Transistor S5B 2SC2290 equivalent 2sc2290
Contextual Info: TO SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 -3 0 M H Z S5B LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP Power Gain Gp = 11.8dB (Min.)

Contextual Info: T O SH IB A 2SC2638 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 6 38 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 6W Min. (f= 175MHz, V <x = 12.5V, Pi = 0.5W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

Contextual Info: T O SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 Ç C 7 7 Q fl Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain

Contextual Info: TO SHIBA 2SC2643 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 2643 UHF BAND POWER AMPLIFIER APPLICATIONS U n it in mm Output Power : Po = 25W Min. (f= 470MHz, V çc = 12.6V, Pi = 8W) MAXIMUM RATINGS (Tc = 25°C) UNIT V V V vebo A 1. EMITTER ic

Contextual Info: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

Contextual Info: TO SH IB A 2SC4840 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4840 VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low N oise F igure, H igh Gain. • N F = l.ld B , |S2 le l2 = 13dB f= lG H z U n it in mm MAXIMUM RATINGS (Ta = 25°C) SYMBOL

Contextual Info: TO SHIBA 2SC3006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE K f í n n fi UHF BAND POWER AMPLIFIER APPLICATIONS Output Power Unit in mm Po = 3W Min. r f= 4 .7 0 iv m 7 V. / in = 1 9. RV -P i- = n 4.W1 . , MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA TENTATIVE HN9C10FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C1OFT Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 M O U N T E D DEVICES

2SC5086

Abstract: 2SC5261 HN9C10FT
Contextual Info: TO SH IBA TENTATIVE HN9C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C1OFT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 1 i r 4- A •

bly 2 10

Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
Contextual Info: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz

Contextual Info: TO SHIBA TENTATIVE HN9C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q T 1 flFT um • ■ ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • U nit in mm TWO devices are built in to the super-thin and ultra super mini 2.1 ± 0.1

Contextual Info: TO SH IB A 2SC4839 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4839 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2 le l2= 12dB f=lG H z U nit in mm M A X IM U M RATINGS (Ta = 25°C) SYMBOL

2SC4083

Abstract: 2SC3838K T106 T146 T147
Contextual Info: h 7 > y X $ /Transistors 2SC3838K/2SC4083 X t f i ^ V 7 J l / y i / - t N P N V ' J =1> h 7 > V ^ i ! 2SC3838K 2SC4083 Epitaxial Planar NPN Silicon Transistors Amplifier • i 1 f r t f 'S '- 'o fT= 3.2GHz (Typ.) 2) C c-rb b l - Hi /Di mensi ons (Unit : mm)

2SC1923-O

Contextual Info: 2SC1923 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR H IG H FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . FM , RF, M IX , IF A M P LIF IE R A P P LIC A T IO N S . • Small Reverse Transfer Capacitance : Cre = 0.7pF Typ. • Low Noise Figure : NF = 2.5dB (Typ.) (f= 100MHz)

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors